ADVANCED POWER TECHNOLOGY APT10M07JVR Service Manual

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APT10M07JVR

100V 225A 0.007Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular SOT-227 Package

S

G

®

ISOTOP

G

D

®

S

SOT-227

"UL Recognized"

D

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

APT10M07JVR

100
225
900

±30
±40

700

5.6

-55 to 150
300
225

50

3600

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 5.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

100
225

24

0.007
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5584 Rev B

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT10M07JVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = 100A @ 25°C

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

DSS

DSS

@ 25°C

MIN TYP MAX

18000 21600

6800 9500
2800 4200

700 1050
130 195
300 435

25 50
60 120
80 120
20 40

MIN TYP MAX

225
900

1.3

330

3

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5584 Rev B

THERMAL/PACKAGE CHARACTERISTICS

Symbol

R
R

V

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

3

See MIL-STD-750 Method 3471

4

Starting T

0.2
D=0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

, THERMAL IMPEDANCE (°C/W)
Z

0.005

JC

θ

0.001

0.0005

0.1

0.05

0.01

10

+25°C, L = 142µH, R

j

=

-1

10

MIN TYP MAX

0.18
40

2500

13

25Ω, Peak IL = 225A

G

=

1.0 10

UNIT

°C/W

Volts

lb•in

APT10M07JVR

360

300

240

180

120

VGS=7V, 8V, 9V, 10V & 15V

6.5V

6V

5.5V

360

300

240

180

120

VGS=15V

10V

9V

8V

7V

6.5V

6V

5.5V

, DRAIN CURRENT (AMPERES)

60

D

5V

, DRAIN CURRENT (AMPERES)

60

D

4.5V

0

0 10 20 30 40 50 0 0.5 1.0 1.5 2.0 2.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

360

300

240

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

180

TJ = -55°C

TJ = +25°C

TJ = +125°C

120

, DRAIN CURRENT (AMPERES) I

60

D

0

02468 0100200300400

V

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

TJ = -55°C

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

250

200

1.10

1.05

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

VGS=10V

1.00

0.95

0.90

0.85

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.80

DS

VGS=20V

1.15

1.10

5V

4.5V

150

100

50

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.00

C

ID = 0.5 ID [Cont.]

VGS = 10V

1.75

1.50

1.25

1.00

(NORMALIZED)

0.75

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.50

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

1.05

1.00

0.95

, DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.90

1.2

1.1

1.0

0.9

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5584 Rev B

1,000

OPERATION HERE

LIMITED BY RDS (ON)

500

100

50

10

TC =+25°C

5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

10µS
100µS

1mS

10mS

100mS
DC

50,000

10,000

5,000

APT10M07JVR

C

iss

C

oss

C

rss

1

1 5 10 50 100 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = 100A

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 200 400 600 800 1000 1200 1400 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=20V

VDS=50V

VDS=80V

1,000

500

T

=+150°C T

100

50

10

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

I

J

5

1

=+25°C

J

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

12.2 (.480)

8.9 (.350)

9.6 (.378)
Hex Nut M4

(4 places)

r = 4.0 (.157)
(2 places)

14.9 (.587)

15.1 (.594)

4.0 (.157)

4.2 (.165)
(2 places)

3.3 (.129)

3.6 (.143)

* Source Drain

0.75 (.030)

0.85 (.033)

1.95 (.077)

2.14 (.084)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

* Source

Gate

Dimensions in Millimeters and (Inches)

®

ISOTOP

is a Registered Trademark of SGS Thomson.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5584 Rev B

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

25.2 (0.992)

12.6 (.496)

25.4 (1.000)

12.8 (.504)

*

Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

"UL Recognized" File No. E145592