ADVANCED POWER TECHNOLOGY APT100GT120JU3 Service Manual

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APT100GT120JU3

ISOTOP® Buck chopper

Trench IGBT

G

E

G

ISOTOP

C

A

C

Ò

Application

· AC and DC motor control

· Switched Mode Power Supplies

Features

· Trench + Field Stop IGBT

E

Benefits

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- Avalanche energy rated

- RBSOA and SCSOA rated

· ISOTOP

· Very low stray inductance

· High level of integration

· Low conduction losses

· Stable temperature behavior

· Very rugged

· Direct mounting to heatsink (isolated package)

· Low junction to case thermal resistance

· Easy paralleling due to positive TC of VCEsat

V I

®

Package (SOT-227)

Absolute maximum ratings

Symbol Parameter Max ratings Unit

Collector - Emitter Breakdown Voltage 1200 V

V

CES

IC1 IC2

ICM Pulsed Collector Current TC = 25°C 280

VGE Gate – Emitter Voltage ±20 V

PD Maximum Power Dissipation TC = 25°C 480 W

IFAV Maximum Average Forward Current Duty cycle=0.5 TC = 80°C 27

IF

RMS

Continuous Collector Current

RMS Forward Current (Square wave, 50% duty) 34

T

= 25°C

C

TC = 80°C 100

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

= 1200V

CES

= 100A @ Tc = 80°C

C

®

Technology

140

A

APT website –http://www.advancedpower.com

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APT100GT120JU3 – Rev 0 April, 2004

APT100GT120JU3

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

BV

Collector - Emitter Breakdown Voltage VGE = 0V, IC = 5mA

CES

I

Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 5 mA

CES

=15V

V

Collector Emitter on Voltage

CE(on)

V

Gate Threshold Voltage VGE = VCE, IC = 4mA 5.0 6.5 V

GE(th)

I

Gate – Emitter Leakage Current VGE = ±20V, VCE = 0V 400 nA

GES

GE

= 100A

I

C

Tj = 25°C

T

= 125°C

j

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

Input Capacitance 7200

ies

C

Output Capacitance 400

oes

C

Reverse Transfer Capacitance

res

T

Turn-on Delay Time 260

d(on)

T

Rise Time 30

r

T

Turn-off Delay Time 420

d(off)

T

Fall Time

f

T

Turn-on Delay Time 290

d(on)

T

Rise Time 45

r

T

Turn-off Delay Time 520

d(off)

T

Fall Time 90

f

Eon Turn-on Switching Energy 10

E

Turn-off Switching Energy

off

= 0V

V

GE

= 25V

V

CE

f = 1MHz

Resistive Switching (25°C)

= 15V

V

GE

= 600V

V

Bus

= 100A

I

C

= 3.9W

R

G

Inductive Switching (125°C)

= 15V

V

GE

= 600V

V

Bus

= 100A

I

C

= 3.9W

R

G

1200

V

1.4 1.7 2.1

2.0

300

70

12

V

pF

ns

mJ

APT website –http://www.advancedpower.com

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APT100GT120JU3 – Rev 0 April, 2004

APT100GT120JU3

Diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

= 30A 2.0 2.5

I

VF Diode Forward Voltage

IRM Maximum Reverse Leakage Current

F

IF = 60A 2.3

= 30A Tj = 125°C 1.8

I

F

VR = 1200V Tj = 25°C 250 V

= 1200V Tj = 125°C 500

R

CT Junction Capacitance VR = 200V 32 pF

=1A,VR=30V

I

Reverse Recovery Time

trr

Reverse Recovery Time

I

Maximum Reverse Recovery Current

RRM

Qrr Reverse Recovery Charge

trr Reverse Recovery Time 220 ns

Qrr Reverse Recovery Charge 4650 nC

I

Maximum Reverse Recovery Current

RRM

F

di/dt =100A/µs

I

= 30A

F

= 800V

V

R

di/dt =200A/µs

= 30A

I

F

= 800V

V

R

di/dt =1000A/µs

= 25°C 31

T

j

Tj = 25°C 370

= 125°C 500

T

j

Tj = 25°C 5

T

= 125°C 12

j

Tj = 25°C 660

= 125°C 3450

T

j

Tj = 125°C

37 A

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

R

Junction to Case

thJC

R

Junction to Ambient (IGBT & Diode) 20

thJA

V

TJ,T

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

ISOL

Storage Temperature Range -55 150

STG

IGBT 0.26

Diode 1.1

2500 V

TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300

Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m

Wt Package Weight 29.2 g

Typical IGBT Performance Curve

Operating Frequency vs Collector Current

40

35

30

25

20

15

10

5

0

Fmax, Operating Frequency (kHz)

0 20 40 60 80 100 120 140

I

VCE=600V D=5 0% R

=3.9 Ω

G

T

=125°C

J

(A)

C

V

µA

ns

A

nC

°C/W

°C

APT website –http://www.advancedpower.com

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APT100GT120JU3 – Rev 0 April, 2004

APT100GT120JU3

Output Characteristics (VGE=15V)

200

150

(A)

C

I

100

TJ=25°C

TJ=125°C

200

150

(A)

100

C

I

Output Characteristics

TJ = 125°C

VGE=17V

VGE=13V

VGE=15V

VGE=9V

50

0

01234

(V)

V

CE

200

150

100

(A)

C

I

50

Switching Energy Losses vs Gate Resistance

25

20

15

E (mJ)

10

5

0

Transfert Characteristics

TJ=25°C

TJ=125°C

0

56789101112

V

(V)

GE

V

= 600V

CE

V

=15V

GE

I

= 100A

C

= 125°C

T

J

0 5 10 15 20 25

Gate Resistance (ohms)

Eon

Eoff

50

0

01234

Energy losses vs Collector Current

25

V

= 600V

CE

= 15V

V

20

GE

R

= 3.9 Ω

G

= 125°C

T

J

15

E (mJ)

10

5

0

0 25 50 75 100 125 150 175 200

240

200

160

(A)

120

C

I

80

40

0

0 400 800 1200 1600

Eoff

Reverse Safe Operating Area

VGE=15V

=125°C

T

J

R

=3.9 Ω

G

V

(A)

CE

Eon

(A)

I

C

(V)

V

CE

0.3

0.25

0.2

0.15

0.1

0.05

Thermal Impedance (°C/W)

0

0.00001 0.0001 0.001 0.01 0.1 1 10

maximum Effective Transient Thermal Impedance, Junction to Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

rectangular Pulse Duration (Seconds)

APT website –http://www.advancedpower.com

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APT100GT120JU3 – Rev 0 April, 2004

APT100GT120JU3

Typical Diode Performance Curve

APT website –http://www.advancedpower.com

5-7

APT100GT120JU3 – Rev 0 April, 2004

APT100GT120JU3

APT website –http://www.advancedpower.com

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APT100GT120JU3 – Rev 0 April, 2004

APT100GT120JU3

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

31.5 (1.240)

31.7 (1.248) W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187) H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165) (2 places)

3.3 (.129)

3.6 (.143)

Anode

r = 4.0 (.157) (2 places)

7.8 (.307)

8.2 (.322)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

Emitter

Dimensions in Millimeters and (Inches)

12.2 (.480)

8.9 (.350)

9.6 (.378)

0.75 (.030)

0.85 (.033)

1.95 (.077)

2.14 (.084)

Hex Nut M4 (4 places)

25.2 (0.992)

12.6 (.496)

12.8 (.504)

25.4 (1.000)

Collector

*

Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.

Gate

ISOTOP® is a Registered Trademark of SGS Thomson

APT reserves the right to change, without notice, the specifications and information contained herein

APT's products are covere d by one or more of U.S patents 4,895, 810 5,045,903 5,0 89,434 5,182, 234 5,019, 522 5,262,3 36 6, 503,786 5,256,5 83 4,7 48,103 5,283,20 2 5,23 1,474 5,434,095 5,528 ,058 and f oreign patents. U .S and Forei gn patents pe ndin g. All Rights Reserved.

APT website –http://www.advancedpower.com

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APT100GT120JU3 – Rev 0 April, 2004

ADVANCED POWER TECHNOLOGY APT100GT120JU3 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual