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APT100GT120JU3
ISOTOP® Buck chopper
Trench IGBT
G
E
G
ISOTOP
C
A
A
C
Ò
Application
· AC and DC motor control
· Switched Mode Power Supplies
Features
· Trench + Field Stop IGBT
E
Benefits
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
· ISOTOP
· Very low stray inductance
· High level of integration
· Low conduction losses
· Stable temperature behavior
· Very rugged
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Easy paralleling due to positive TC of VCEsat
V
I
®
Package (SOT-227)
Absolute maximum ratings
Symbol Parameter Max ratings Unit
Collector - Emitter Breakdown Voltage 1200 V
V
CES
IC1
IC2
ICM Pulsed Collector Current TC = 25°C 280
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 480 W
IFAV Maximum Average Forward Current Duty cycle=0.5 TC = 80°C 27
IF
RMS
Continuous Collector Current
RMS Forward Current (Square wave, 50% duty) 34
T
= 25°C
C
TC = 80°C 100
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
= 1200V
CES
= 100A @ Tc = 80°C
C
®
Technology
140
A
A
APT website –http://www.advancedpower.com
1-7
APT100GT120JU3 – Rev 0 April, 2004
APT100GT120JU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BV
Collector - Emitter Breakdown Voltage VGE = 0V, IC = 5mA
CES
I
Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 5 mA
CES
=15V
V
V
Collector Emitter on Voltage
CE(on)
V
Gate Threshold Voltage VGE = VCE, IC = 4mA 5.0 6.5 V
GE(th)
I
Gate – Emitter Leakage Current VGE = ±20V, VCE = 0V 400 nA
GES
GE
= 100A
I
C
Tj = 25°C
T
= 125°C
j
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
Input Capacitance 7200
ies
C
Output Capacitance 400
oes
C
Reverse Transfer Capacitance
res
T
Turn-on Delay Time 260
d(on)
T
Rise Time 30
r
T
Turn-off Delay Time 420
d(off)
T
Fall Time
f
T
Turn-on Delay Time 290
d(on)
T
Rise Time 45
r
T
Turn-off Delay Time 520
d(off)
T
Fall Time 90
f
Eon Turn-on Switching Energy 10
E
Turn-off Switching Energy
off
= 0V
V
GE
= 25V
V
CE
f = 1MHz
Resistive Switching (25°C)
= 15V
V
GE
= 600V
V
Bus
= 100A
I
C
= 3.9W
R
G
Inductive Switching (125°C)
= 15V
V
GE
= 600V
V
Bus
= 100A
I
C
= 3.9W
R
G
1200
V
1.4 1.7 2.1
2.0
300
70
12
V
pF
ns
ns
mJ
APT website –http://www.advancedpower.com
2-7
APT100GT120JU3 – Rev 0 April, 2004
APT100GT120JU3
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
= 30A 2.0 2.5
I
VF Diode Forward Voltage
IRM Maximum Reverse Leakage Current
F
IF = 60A 2.3
= 30A Tj = 125°C 1.8
I
F
VR = 1200V Tj = 25°C 250
V
= 1200V Tj = 125°C 500
R
CT Junction Capacitance VR = 200V 32 pF
=1A,VR=30V
I
Reverse Recovery Time
trr
Reverse Recovery Time
I
Maximum Reverse Recovery Current
RRM
Qrr Reverse Recovery Charge
trr Reverse Recovery Time 220 ns
Qrr Reverse Recovery Charge 4650 nC
I
Maximum Reverse Recovery Current
RRM
F
di/dt =100A/µs
I
= 30A
F
= 800V
V
R
di/dt =200A/µs
= 30A
I
F
= 800V
V
R
di/dt =1000A/µs
= 25°C 31
T
j
Tj = 25°C 370
= 125°C 500
T
j
Tj = 25°C 5
T
= 125°C 12
j
Tj = 25°C 660
= 125°C 3450
T
j
Tj = 125°C
37 A
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
Junction to Case
thJC
R
Junction to Ambient (IGBT & Diode) 20
thJA
V
TJ,T
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
ISOL
Storage Temperature Range -55 150
STG
IGBT 0.26
Diode 1.1
2500 V
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
Typical IGBT Performance Curve
Operating Frequency vs Collector Current
40
35
30
25
20
15
10
5
0
Fmax, Operating Frequency (kHz)
0 20 40 60 80 100 120 140
I
VCE=600V
D=5 0%
R
=3.9 Ω
G
T
=125°C
J
(A)
C
V
µA
ns
A
nC
°C/W
°C
APT website –http://www.advancedpower.com
3-7
APT100GT120JU3 – Rev 0 April, 2004