ADVANCED POWER TECHNOLOGY APT100GN60B2 Service Manual

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TYPICAL PERFORMANCE CURVES

600V

APT100GN60B2

®

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V

and are ideal for low frequency applications that require absolute minimum

CE(ON)

conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V

temperature coefficient. A built-in gate resistor ensures

CE(ON)

extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.

• 600V Field Stop

• Trench Gate: Low V

• Easy Paralleling

• 6µs Short Circuit Capability

• Intergrated Gate Resistor: Low EMI, High Reliability

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

CE(on)

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

APT100GN60B2G*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

APT100GN60B2(G)

®

T-Max

®

G

C

E

C

G

E

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

TJ,T

T

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current

Continuous Collector Current

Pulsed Collector Current

8

@ TC = 25°C

8

@ TC = 110°C

1

Switching Safe Operating Area @ TJ = 175°C

Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

STATIC ELECTRICAL CHARACTERISTICS

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

R

G(int)

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA)

Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C)

Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)

Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)

Gate-Emitter Leakage Current (VGE = ±20V)

Intergrated Gate Resistor

APT100GN60B2(G)

UNIT

600

Volts

±30

229

135

Amps

300

300A @ 600V

625

Watts

-55 to 175

300

°C

MIN TYP MAX

600

5.0 5.8 6.5

Units

Volts

1.05 1.45 1.85

2

2

25

TBD

600

2

1.87

µA

nA

Ω

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

050-7621 Rev A 10-2005

DYNAMIC CHARACTERISTICS

Symbol

C

C

oes

C

V

GEP

Q

Q

Q

SSOA

SCSOA

t

d(on)

t

t

d(off)

t

E

on1

E

on2

E

t

d(on)

t

t

d(off)

t

E

on1

E

on2

E

Characteristic

Input Capacitance

ies

Output Capacitance

Reverse Transfer Capacitance

res

Gate-to-Emitter Plateau Voltage

Total Gate Charge

g

Gate-Emitter Charge

ge

Gate-Collector ("Miller ") Charge

gc

Switching Safe Operating Area

Short Circuit Safe Operating Area

Turn-on Delay Time

Current Rise Time

r

Turn-off Delay Time

Current Fall Time

f

Turn-on Switching Energy

Turn-on Switching Energy (Diode)

Turn-off Switching Energy 6

off

Turn-on Delay Time

Current Rise Time

r

Turn-off Delay Time

Current Fall Time

f

Turn-on Switching Energy 4

Turn-on Switching Energy (Diode)

Turn-off Switching Energy

off

3

APT100GN60B2(G)

Test Conditions

Capacitance

V

= 0V, V

GE

CE

= 25V

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 300V

CE

IC = 100A

TJ = 175°C, RG = 4.3Ω 7, V

15V, L = 100µH,V

VCC = 600V, V

CE

GE

= 600V

= 15V,

TJ = 125°C, RG = 4.3Ω 7

Inductive Switching (25°C)

V

= 400V

CC

V

= 15V

GE

IC = 100A

4

5

RG = 1.0Ω

TJ = +25°C

7

MIN TYP MAX

6000

560

200

9.5

600

45

340

=

GE

300

6

31

65

310

55

4750

5095

UNIT

pF

V

nC

A

µs

ns

µJ

2675

Inductive Switching (125°C)

V

= 400V

CC

V

= 15V

GE

IC = 100A

4

55

66

RG = 1.0Ω

TJ = +125°C

7

31

65

350

85

5000

6255

3300

ns

µJ

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol

R

θ

R

θ

W

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

3 See MIL-STD-750 Method 3471.

4 E

on1

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.

5 E

on2

loss. (See Figures 21, 22.)

6 E

off

7 RG is external gate resistance, not including R

8 Continuous current limited by package pin temperature to 100A.

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-7621 Rev A 10-2005

Characteristic

Junction to Case (IGBT)

JC

Junction to Case (DIODE)

JC

Package Weight

T

includes both IGBT and FRED leakages

ces

is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current

is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

nor gate driver impedance. (MIC4452)

G(int)

MIN TYP MAX

N/A

5.9

.21

UNIT

°C/W

gm