查询APT100GN120J供应商
TYPICAL PERFORMANCE CURVES
1200V
APT100GN120J
®
APT100GN120J
C
®
E
7
2
2
-
T
O
S
"UL Recognized"
file # E145592
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
and are ideal for low frequency applications that require absolute minimum
CE(ON)
temperature coefficient. A built-in gate resistor ensures
CE(ON)
E
G
ISOTOP
• 1200V Field Stop
• Trench Gate: Low V
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
CE(on)
G
C
E
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
TJ,T
T
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
1
APT100GN120J
1200
±30
153
70
300
300A @ 1200V
446
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 6mA)
Gate Threshold Voltage (VCE = VGE, IC = 6mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
2
2
MIN TYP MAX
1200
5.0 5.8 6.5
1.4 1.7 2.1
100
TBD
600
7.5
Units
Volts
2.0
µA
nA
Ω
050-7623 Rev A 10-2005
DYNAMIC CHARACTERISTICS
Symbol
C
C
C
V
GEP
Q
Q
Q
SSOA
t
d(on)
t
d(off)
E
E
E
t
d(on)
t
d(off)
E
E
E
Characteristic
Input Capacitance
ies
Output Capacitance
oes
Reverse Transfer Capacitance
res
Gate-to-Emitter Plateau Voltage
Total Gate Charge
g
Gate-Emitter Charge
ge
Gate-Collector ("Miller ") Charge
gc
Switching Safe Operating Area
Turn-on Delay Time
t
Current Rise Time
r
Turn-off Delay Time
t
Current Fall Time
f
Turn-on Switching Energy
on1
Turn-on Switching Energy (Diode)
on2
Turn-off Switching Energy 6
off
Turn-on Delay Time
t
Current Rise Time
r
Turn-off Delay Time
t
Current Fall Time
f
Turn-on Switching Energy 4
on1
Turn-on Switching Energy (Diode)
on2
Turn-off Switching Energy
off
3
APT100GN120J
Test Conditions
Capacitance
V
= 0V, V
GE
CE
= 25V
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 600V
CE
IC = 100A
TJ = 150°C, RG = 4.3Ω 7, V
15V, L = 100µH,V
= 1200V
CE
Inductive Switching (25°C)
V
= 800V
CC
V
= 15V
GE
IC = 100A
4
5
RG = 1.0Ω
TJ = +25°C
7
MIN TYP MAX
6500
365
280
9.5
540
50
295
=
GE
300
50
50
615
105
11
15
UNIT
pF
V
nC
A
ns
mJ
9.5
Inductive Switching (125°C)
V
= 800V
CC
V
= 15V
GE
IC = 100A
4
55
66
RG = 1.0Ω
TJ = +125°C
7
50
50
725
210
12
22
14
ns
mJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θ
R
θ
V
Isolation
W
Characteristic
Junction to Case (IGBT)
JC
Junction to Case (DIODE)
JC
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
T
MIN TYP MAX
2500
1.03
29.2
Torque
Maximum Terminal & Mounting Torque
1.1
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
on1
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
on2
loss. (See Figures 21, 22.)
6 E
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
off
7 RG is external gate resistance, not including R
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7623 Rev A 10-2005
includes both IGBT and FRED leakages
ces
nor gate driver impedance. (MIC4452)
G(int)
.28
N/A
10
UNIT
°C/W
Volts
oz
gm
Ib•in
N•m
TYPICAL PERFORMANCE CURVES
300
VGE = 15V
TJ = -55°C
250
TJ = 25°C
200
TJ = 125°C
150
TJ = 175°C
100
, COLLECTOR CURRENT (A)
C
50
300
15V
13V
250
200
12V
11V
150
100
, COLLECTOR CURRENT (A)
C
50
10V
9V
APT100GN120J
8V
7V
0 1.0 2.0 3.0 4.0 5.0 0 5 10 15 20 25 30
V
FIGURE 1, Output Characteristics(TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 125°C)
0
, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
300
250µs PULSE
TEST<0.5 % DUTY
CYCLE
T
= 150°C
J
250
TJ = 125°C
200
TJ = 25°C
150
TJ = -55°C
100
0
16
IC = 100A
TJ = 25°C
14
12
10
8
= 240V
V
CE
= 600V
V
CE
V
= 960V
CE
6
4
, COLLECTOR CURRENT (A) I
50
C
0 2 4 6 8 10 12 14 0 100 200 300 400 500 600
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
0
, GATE-TO-EMITTER VOLTAGE (V) I
2
GE
0
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
3.5
3.0
2.5
T
= 25°C.
J
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
= 200A
C
3.5
2.5
3
I
= 200A
C
I
I
2.0
1.5
I
C
= 50A
= 100A
C
1.0
0.5
, COLLECTOR-TO-EMITTER VOLTAGE (V) I
0
CE
8 10 12 14 16 -50 -25 0 25 50 75 100 125 150
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
2
1.5
1
0.5
VGE = 15V.
, COLLECTOR-TO-EMITTER VOLTAGE (V) V
CE
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
= 100A
C
I
C
= 50A
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
1.15
250
1.10
1.05
200
1.00
0.95
0.90
0.85
, THRESHOLD VOLTAGE V
0.80
GS(TH)
0.75
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
0.70
V
(NORMALIZED)
150
100
50
DC COLLECTOR CURRENT(A) V
C,
0
I
050-7623 Rev A 10-2005
60
V
= 15V
GE
50
1000
800
APT100GN120J
40
600
V
=15V,T
30
GE
400
=125°C
J
V
GE
=15V,T
=25°C
J
20
, TURN-ON DELAY TIME (ns)
d(ON)
10 40 70 100 130 160 190 220 10 40 70 100 130 160 190 220
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
10
0
V
CE
T
J
R
G
L = 100µH
= 800V
= 25°C, or 125°C
= 1.0Ω
, TURN-OFF DELAY TIME (ns)
200
V
0
= 800V
CE
R
= 1.0Ω
G
L = 100µH
(OFF)
d
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
250
R
= 1.0Ω, L = 100µH, V
G
CE
= 800V
200
150
100
RISE TIME (ns) t
r,
50
T
= 25 or 125°C,V
10 40 70 100 130 160 190 220 10 40 70 100 130 160 190 220
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
0
J
GE
= 15V
250
200
T
= 125°C, VGE = 15V
J
150
100
FALL TIME (ns) t
f,
T
= 25°C, V
J
GE
= 15V
50
R
= 1.0Ω, L = 100µH, V
G
0
CE
= 800V
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
80,000
60,000
V
V
R
CE
GE
= 1.0Ω
G
= 800V
= +15V
= 125°C
T
J
30,000
25,000
20,000
V
V
R
CE
GE
= 1.0Ω
G
= 800V
= +15V
= 125°C
T
J
40,000
15,000
10,000
20,000
, TURN ON ENERGY LOSS (µJ) t
ON2
10 40 70 100 130 160 190 220 10 40 70 100 130 160 190 220
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
0
T
J
= 25°C
, TURN OFF ENERGY LOSS (µJ) t
5000
OFF
= 25°C
T
J
0
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
100,000
80,000
V
CE
V
GE
= 125°C
T
J
= 800V
= +15V
200A
E
on2,
80,000
60,000
VCE = 800V
VGE = +15V
RG = 1.0Ω
200A
E
on2,
60,000
40,000
40,000
20,000
0 5 10 15 20 0 25 50 75 100 125
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
SWITCHING ENERGY LOSSES (µJ) E
200A
E
off,
100A
E
off,
50A
E
0
off,
100A
E
on2,
50A
E
on2,
SWITCHING ENERGY LOSSES (µJ) E
20,000
200A
E
off,
100A
E
off,
E
on2,
0
50A
100A
E
on2,
50A
E
off,
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
050-7623 Rev A 10-2005
TYPICAL PERFORMANCE CURVES
10,000
5,000
C
ies
350
300
APT100GN120J
F)
P
250
200
1,000
150
500
C
C, CAPACITANCE (
0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
100
oes
C
res
, COLLECTOR CURRENT (A)
100
C
I
50
0
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area
0.30
0.25
0.20
0.15
0.10
, THERMAL IMPEDANCE (°C/W)
0.05
JC
θ
Z
RECTANGULAR PULSE DURATION (SECONDS)
D = 0.9
0.7
0.5
0.3
0.1
0
10-5 10
0.05
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Note:
t
1
DM
P
SINGLE PULSE
-4
-3
10
10-2 10-1 1.0 10
Peak TJ = PDM x Z
t
2
Duty Fa ctor D =
t
1
t
/
2
θJC + TC
Junction
temp. (°C)
Power
(watts)
RC MODEL
0.0798
0.174
0.0266
0.0158
0.397
28.9
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
25
10
5
TJ = 125°C
TC = 75°C
D = 50 %
, OPERATING FREQUENCY (kHz)
VCE = 800V
RG = 1.0Ω
MAX
1
F
10 30 50 70 90 110 130 150
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
F
= min (f
max
0.05
f
=
max1
t
f
=
max2
P
=
diss
d(on)
P
diss
E
on2
TJ - T
R
θJC
, f
max
+ tr + t
- P
cond
+ E
off
C
max2
d(off)
)
+ t
f
050-7623 Rev A 10-2005
APT100GN120J
V
CC
I
C
D.U.T.
Figure 21, Inductive Switching Test Circuit
90%
t
d(off)
t
f
V
90%
CE
10%
APT100DQ120
A
Gate Voltage
Collector Voltage
0
Collector Current
TJ = 125°C
Gate Voltage
TJ = 125°C
Collector Current
5%
Collector Voltage
t
10%
d(on)
5%
t
r
90%
10%
Switching Energy
Figure 22, Turn-on Switching Waveforms and Definitions
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
SOT-227 (ISOTOP
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
®)
Package Outline
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
* Emitter Collector
* Emitter
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
Emitter terminals are shorted
*
internally. Current handling
capability is equal for either
Source terminal.
Gate
25.2 (0.992)
25.4 (1.000)
®
is a Registered Trademark of SGS Thomson.
ISOTOP
6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign pat ents pending. All Rights Reserved.
5,262,336
050-7623 Rev A 10-2005
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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