ADVANCED POWER TECHNOLOGY APT100GN120J Service Manual

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TYPICAL PERFORMANCE CURVES

1200V

APT100GN120J

®

APT100GN120J

C

®

E

7

2

2

-

T

O

S

"UL Recognized"

file # E145592

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.

and are ideal for low frequency applications that require absolute minimum

CE(ON)

temperature coefficient. A built-in gate resistor ensures

CE(ON)

E

G

ISOTOP

• 1200V Field Stop

• Trench Gate: Low V

• Easy Paralleling

• Intergrated Gate Resistor: Low EMI, High Reliability

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

CE(on)

G

C

E

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

TJ,T

T

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ TC = 25°C

Continuous Collector Current @ TC = 110°C

Pulsed Collector Current

Switching Safe Operating Area @ TJ = 150°C

Total Power Dissipation

D

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

L

1

APT100GN120J

1200

±30

153

70

300

300A @ 1200V

446

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

R

G(int)

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 6mA)

Gate Threshold Voltage (VCE = VGE, IC = 6mA, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C)

Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)

Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)

Gate-Emitter Leakage Current (VGE = ±20V)

Intergrated Gate Resistor

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

2

2

MIN TYP MAX

1200

5.0 5.8 6.5

1.4 1.7 2.1

100

TBD

600

7.5

Units

Volts

2.0

µA

nA

Ω

050-7623 Rev A 10-2005

DYNAMIC CHARACTERISTICS

Symbol

C

C

C

V

GEP

Q

Q

Q

SSOA

t

d(on)

t

d(off)

E

E

E

t

d(on)

t

d(off)

E

E

E

Characteristic

Input Capacitance

ies

Output Capacitance

oes

Reverse Transfer Capacitance

res

Gate-to-Emitter Plateau Voltage

Total Gate Charge

g

Gate-Emitter Charge

ge

Gate-Collector ("Miller ") Charge

gc

Switching Safe Operating Area

Turn-on Delay Time

t

Current Rise Time

r

Turn-off Delay Time

t

Current Fall Time

f

Turn-on Switching Energy

on1

Turn-on Switching Energy (Diode)

on2

Turn-off Switching Energy 6

off

Turn-on Delay Time

t

Current Rise Time

r

Turn-off Delay Time

t

Current Fall Time

f

Turn-on Switching Energy 4

on1

Turn-on Switching Energy (Diode)

on2

Turn-off Switching Energy

off

3

APT100GN120J

Test Conditions

Capacitance

V

= 0V, V

GE

CE

= 25V

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 600V

CE

IC = 100A

TJ = 150°C, RG = 4.3Ω 7, V

15V, L = 100µH,V

= 1200V

CE

Inductive Switching (25°C)

V

= 800V

CC

V

= 15V

GE

IC = 100A

4

5

RG = 1.0Ω

TJ = +25°C

7

MIN TYP MAX

6500

365

280

9.5

540

50

295

=

GE

300

50

50

615

105

11

15

UNIT

pF

V

nC

A

ns

mJ

9.5

Inductive Switching (125°C)

V

= 800V

CC

V

= 15V

GE

IC = 100A

4

55

66

RG = 1.0Ω

TJ = +125°C

7

50

50

725

210

12

22

14

ns

mJ

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol

R

θ

R

θ

V

Isolation

W

Characteristic

Junction to Case (IGBT)

JC

Junction to Case (DIODE)

JC

RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)

Package Weight

T

MIN TYP MAX

2500

1.03

29.2

Torque

Maximum Terminal & Mounting Torque

1.1

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

3 See MIL-STD-750 Method 3471.

4 E

is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current

on1

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.

5 E

is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

on2

loss. (See Figures 21, 22.)

6 E

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

off

7 RG is external gate resistance, not including R

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-7623 Rev A 10-2005

includes both IGBT and FRED leakages

ces

nor gate driver impedance. (MIC4452)

G(int)

.28

N/A

10

UNIT

°C/W

Volts

oz

gm

Ib•in

N•m