ADVANCED POWER TECHNOLOGY APT100GF60JR Service Manual

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APT100GF60JR

600V 100A

Fast IGBT

The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,

E

G

E

C

SOT-227

fast switching speed and low Collector-Emitter On voltage.

• Low Forward Voltage Drop • High Freq. Switching to 20KHz

• Low Tail Current • Ultra Low Leakage Current

ISOTOP

®

"UL Recognized"

C

• Avalanche Rated • RBSOA and SCSOA Rated

G

E

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V

GE

I

C1

I

C2

I

CM

I

LM

E

AS

P

D

TJ,T

STG

T

L

Parameter

Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
RBSOA Clamped Inductive Load Current @ R
Single Pulse Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

= 20KW)

GE

4

@ TC = 25°C

= 60°C

C

1

@ TC = 25°C

2

= 11W TC = 125°C

g

APT100GF60JR

600
600
±20
100
100
280
200

85

500

-55 to 150
300

UNIT

Volts

Amps

mJ

Watts

°C

ADVANCE TECHNICAL

INFORMATION

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

VGE(TH)

V

CE

I

CES

I

GES

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)

(ON)

Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

= VGE, IC = 700µA, Tj = 25°C)

CE

= V

CE

CES

CES

GE

APT Website - http://www.advancedpower.com

= 0V, IC = 1.0mA)

GE

, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)

= ±20V, V

CE

= 0V)

MIN TYP MAX

600

4.5 5.5 6.5

2.2 2.7

2.8 3.4

1.0

5.0

±100

UNIT

Volts

mA

nA

052-6261 Rev - 5-2001

DYNAMIC CHARACTERISTICS

APT100GF60JR

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

Capacitance

= 0V

V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.5V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= 0.66V

CC

I

CES

= I

C

C2

RG = 10W
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy

ADVANCE TECHNICAL

Turn-off Switching Energy

INFORMATION

Inductive Switching (150°C)

V

(Peak) = 0.66V

CLAMP

V

R

T

J

= 15V

GE

I

= I

C

C2

= 10W

G

= +150°C

CES

Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance

Inductive Switching (25°C)

V

(Peak) = 0.66V

CLAMP

V

R

T

= 20V, I

V

CE

= 15V

GE

I

= I

C

= 10W

G

= +25°C

J

C2

CES

= I

C

C2

MIN TYP MAX

4400

480
300

335

40

195

50
200
190
270

50
170
400

95

6.3

5.2

11.5
55

180
365

90

10.5

6

UNIT

pF

nC

ns

ns

mJ

ns

mJ

S

THERMAL AND MECHANICAL CHARACTERISTICS

Symbol

R

QJC

R

QJA

W

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

IC = IC2, RGE = 25W, L = 17µH, Tj = 25°C

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

052-6261 Rev - 5-2001

Characteristic

Junction to Case
Junction to Ambient

Package Weight

T

Mounting Torque (

using a 6-32 or 3mm Binding Head Machine Screw)

MIN TYP MAX

0.32
40

1.03

29.2
10

1.5

UNIT

°C/W

oz

gm
lb•in
N•m

APT100GF60JR

r = 4.0 (.157)
(2 places)

ADVANCE TECHNICAL

31.5 (1.240)

31.7 (1.248)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

INFORMATION

11.8 (.463)

12.2 (.480)

8.9 (.350)

7.8 (.307)

8.2 (.322)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165)
(2 places)

3.3 (.129)

3.6 (.143)

* Emitter Collector

* Emitter

9.6 (.378)

1.95 (.077)

2.14 (.084)

Hex Nut M4
(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

*

Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

Gate

25.2 (0.992)

25.4 (1.000)

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

052-6261 Rev - 5-2001

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058