ADVANCED POWER TECHNOLOGY APT100GF60JR Service Manual
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APT100GF60JR
600V 100A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
E
G
E
C
SOT-227
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• Low Tail Current • Ultra Low Leakage Current
ISOTOP
®
"UL Recognized"
C
• Avalanche Rated • RBSOA and SCSOA Rated
G
E
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
TJ,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
RBSOA Clamped Inductive Load Current @ R
Single Pulse Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
= 20KW)
GE
4
@ TC = 25°C
= 60°C
C
1
@ TC = 25°C
2
= 11W TC = 125°C
g
APT100GF60JR
600
600
±20
100
100
280
200
85
500
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
ADVANCE TECHNICAL
INFORMATION
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
VGE(TH)
V
CE
I
CES
I
GES
USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33)5 57 9215 15 FAX: (33)556 47 9761
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
= VGE, IC = 700µA, Tj = 25°C)
CE
= V
CE
CES
CES
GE
APT Website - http://www.advancedpower.com
= 0V, IC = 1.0mA)
GE
, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)
= ±20V, V
CE
= 0V)
MIN TYP MAX
600
4.5 5.5 6.5
2.2 2.7
2.8 3.4
1.0
5.0
±100
UNIT
Volts
mA
nA
052-6261 Rev - 5-2001
DYNAMIC CHARACTERISTICS
APT100GF60JR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
Capacitance
= 0V
V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.5V
CC
CES
I
= I
C
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= 0.66V
CC
I
CES
= I
C
C2
RG = 10W
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
ADVANCE TECHNICAL
Turn-off Switching Energy
INFORMATION
Inductive Switching (150°C)
V
(Peak) = 0.66V
CLAMP
V
R
T
J
= 15V
GE
I
= I
C
C2
= 10W
G
= +150°C
CES
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Inductive Switching (25°C)
V
(Peak) = 0.66V
CLAMP
V
R
T
= 20V, I
V
CE
= 15V
GE
I
= I
C
= 10W
G
= +25°C
J
C2
CES
= I
C
C2
MIN TYP MAX
4400
480
300
335
40
195
50
200
190
270
50
170
400
95
6.3
5.2
11.5
55
180
365
90
10.5
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
QJC
R
QJA
W
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, RGE = 25W, L = 17µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6261 Rev - 5-2001
Characteristic
Junction to Case
Junction to Ambient
Package Weight
T
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw)
MIN TYP MAX
0.32
40
1.03
29.2
10
1.5
UNIT
°C/W
oz
gm
lb•in
N•m
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