ADVANCED POWER TECHNOLOGY APT10088HVR Service Manual

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APT10088HVR

1000V 11A 0.880Ω

POWER MOS V

®

TO-258

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular TO-258 Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

DM

V

GSM

P

TJ,T

T

I

AR

E E

Parameter

Drain-Source Voltage Continuous Drain Current @ T

D

Pulsed Drain Current Gate-Source Voltage Continuous

GS

1

= 25°C

C

Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

1

Avalanche Current Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

(Repetitive and Non-Repetitive)

1

4

®

D

G

S

APT10088HVR

1000

UNIT

Volts

11 44

Amps

±30 ±40

Volts

250

2.0

-55 to 150

Watts

W/°C

°C

300

11

Amps

30

1300

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 579215 15 FAX: (33) 556 479761

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

1000

11

24

0.880 25

250

±100

UNIT

Volts

Amps Ohms

µA

nA

Volts

050-5813 Rev A

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT10088HVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 1.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

3700 4440

350 490 180 270 185 275

16 24 90 135 12 24 10 20 43 65 10 20

MIN TYP MAX

11 44

1.3

800

11

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5813 Rev A

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case Junction to Ambient

θJA

0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

3

See MIL-STD-750 Method 3471

4

Starting T

D=0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

+25°C, L = 21.49mH, R

j

=

-1

10

MIN TYP MAX

0.50 40

25Ω, Peak IL = 11A

G

=

1.0 10

UNIT

°C/W

APT10088HVR

25

20

15

VGS=5.5V, 6V, 7V, 10V & 15V

5V

25

VGS=15V

20

VGS=7V & 10V

VGS=5.5V & 6V

5V

15

10

4.5V

5

, DRAIN CURRENT (AMPERES)

D

5

, DRAIN CURRENT (AMPERES)

D

4V

0

0 100 200 300 400 500 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

30

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

24

1.3

1.2

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

18

1.1

12

VGS=10V

VGS=20V

TJ = +125°C

6

, DRAIN CURRENT (AMPERES) I

D

0

02468 0510152025

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +25°C

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

12

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.9

DS

1.15

4.5V

4V

10

1.10

8

1.05

6

1.00

4

, DRAIN CURRENT (AMPERES) I

2

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

0.95

DSS

0.90

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5813 Rev A

50

LIMITED BY RDS (ON)

10

5

OPERATION HERE

10µS

100µS

1mS

15,000 10,000

5,000

APT10088HVR

C

iss

1

.5

TC =+25°C

, DRAIN CURRENT (AMPERES)

D

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

TJ =+150°C SINGLE PULSE

.1

1 5 10 50 100 5001000 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

0

0 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1.0 1.2

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

VDS=100V

VDS=200V

VDS=500V

10mS

100mS DC

1,000

500

100

50

10

5

1

.5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

.1

I

T

=+150°C T

J

C

oss

C

rss

J

=+25°C

21.21 (.835)

20.70 (.815)

1.14 (.045)

0.88 (.035)

13.84 (.545)

13.58 (.535)

3.56 (.140) BSC

6.86 (.270)

6.09 (.240)

TO-258 Package Outline

17.96 (.707)

17.70 (.697)

19.05 (0.750)

12.70 (0.500)

1.65 (.065)

1.39 (.055)

Dia. Typ.

3 Leads

5.08 (.200) BSC

Dimensions in Millimeters and (Inches)

17.65 (.695)

17.39 (.685)

8.89 (.350)

8.63 (.340)

4.19 (.165)

3.94 (.155)

Drain

Source

Gate

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5813 Rev A

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

ADVANCED POWER TECHNOLOGY APT10088HVR Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual