ADVANCED POWER TECHNOLOGY APT10086BLC Service Manual

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APT10086BLC

APT10086SLC

1000V 13A 0.860W

POWER MOS VI

TM

Power MOS VITM is a new generation of low gate charge, high voltage

BLC

D3PAK

TO-247

N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C
Lower gate charge coupled with Power MOS VI

TM

optimized gate layout,

and C

iss

delivers exceptionally fast switching speeds.

3

• Identical Specifications: TO-247 or Surface Mount D

PAK Package

• Lower Gate Charge & Capacitance • Easier To Drive

rss

.

SLC

D

G

• 100% Avalanche Tested • Faster switching

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

ADVANCED TECHNICAL

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

INFORMATION

APT10086

1000

13

52
±30
±40
370

2.96

-55 to 150
300

13
30

1300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

1000

13

35

0.860
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5920 Rev - 11-99

DYNAMIC CHARACTERISTICS

APT10086 BLC - SLC

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

V

GS

V

= 0.5 V

DD

ID = I

D[Cont.]

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

rr

rr

ADVANCED TECHNICAL

Reverse Recovery Time (IS = -I
Reverse Recovery Charge (I

(Body Diode)

)

INFORMATION

D[Cont.]

= -I

S

D[Cont.]

D[Cont.]

, dlS/dt = 100A/µs)

, dlS/dt = 100A/µs)

= 0V

GS

= 10V

@ 25°C

= 15V

@ 25°C

= 1.6W

DSS

DSS

MIN TYP MAX

2800

350
120

95
17
52
14
10
31
11

MIN TYP MAX

13
52

1.3

800

11.0

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Drain

Characteristic

Junction to Case
Junction to Ambient

qJA

TO-247 Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source

3

See MIL-STD-750 Method 3471

4

Starting T

+25°C, L =15.38mH, R

j

=

D3PAK Package Outline

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

Drain

(Heat Sink)

0.46 (.018)

{3 Plcs}

0.56 (.022)

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

1.22 (.048)

1.32 (.052)

MIN TYP MAX

25W, Peak IL = 13A

G

=

15.95 (.628)

16.05 (.632)

Revised

4/18/95

Dimensions in Millimeters (Inches)

13.79 (.543)

13.99 (.551)

1.98 (.078)

2.08 (.082)

5.45 (.215) BSC
{2 Plcs.}

Source

Drain

Gate

1.04 (.041)

1.15 (.045)

1.27 (.050)

1.40 (.055)

0.34
40

13.41 (.528)

13.51 (.532)

Revised
8/29/97

3.81 (.150)

4.06 (.160)
(Base of Lead)

Heat Sink (Drain)
and Leads
are Plated

UNIT

°C/W

11.51 (.453)

11.61 (.457)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5920 Rev - 11-99

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058