ADVANCED POWER TECHNOLOGY APT10057WVR Service Manual

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APT10057WVR

1000V 17.3A 0.570Ω

POWER MOS V

®

TO-267

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • New TO-267 Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

1

= 25°C

C

Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

1

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

(Repetitive and Non-Repetitive)

1

4

®

D

G

S

APT10057WVR

1000

UNIT

Volts

17.3

69.2

Amps

±30
±40

Volts

450

3.6

-55 to 150

Watts

W/°C

°C

300

17.3

Amps

50

2500

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

1000

17.3

24

0.570
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5826 Rev B

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT10057WVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

6600 7900

595 830
290 430
335 500

29 45

165 250

16 32
13 26
59 90

816

MIN TYP MAX

17.3

69.2

1.3

960

22

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5826 Rev B

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

θJA

0.3

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

3

See MIL-STD-750 Method 3471

4

Starting T

D=0.5

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

+25°C, L = 16.71mH, R

j

=

-1

10

MIN TYP MAX

0.28
40

25Ω, Peak IL = 17.3A

G

=

1.0 10

UNIT

°C/W

APT10057WVR

50

50

40

30

VGS=5.5V, 10V & 15V

5V

20

4.5V

10

, DRAIN CURRENT (AMPERES)

D

0

0 100 200 300 400 500 0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4V

40

VGS=5.5V, 10V & 15V

30

20

10

, DRAIN CURRENT (AMPERES)

D

0

4.5V

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

50

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

40

1.3

1.2

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

30

1.1

20

10

, DRAIN CURRENT (AMPERES) I

D

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

0

02468 01020304050

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

20

TJ = -55°C

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.9

DS

1.15

VGS=10V

VGS=20V

5V

4V

16

1.10

1.05

12

1.00

8

0.95

4

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.90

0.85

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5826 Rev B

70

OPERATION HERE

LIMITED BY RDS (ON)

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

10µS
100µS

1mS

10mS

100mS
DC

30,000

10,000

5,000

1,000

500

APT10057WVR

C

iss

C

oss

C

rss

.1

1 5 10 50 100 5001000 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=100V

VDS=200V

VDS=500V

100

100

50

10

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

I

T

=+150°C T

J

5

1

=+25°C

J

TO-267 Package Outline

20.45 (.805)

1.80 (.071)

1.25 (.049)

20.20 (.795)

10.23 (.403)

10.10 (.398)

24.15 (.951)

23.60 (.929)

16.90 (.665)

16.40 (.646)

4.20 (.165) BSC

7.40 (.291)

6.60 (.260)

20.32 (.800)

20.07 (.790)

19.05 (.750)

12.70 (.500)

1.65 (.065)

1.40 (.055)

5.00 (.197) BSC

Dia. Typ.

3 Leads

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5826 Rev B

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

4.19 (.165)

3.95 (.156)

Drain
Source

Gate