ADVANCED POWER TECHNOLOGY APT10050JLC Service Manual

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APT10050JLC

1000V 19A 0.500

POWER MOS VI

Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C
Lower gate charge coupled with Power MOS VI
delivers exceptionally fast switching speeds.

• Lower Gate Charge • Lower Input Capacitance

• Faster Switching • Easier To Drive

TM

and C

TM

optimized gate layout,

iss

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D

®

S

SOT-227

"UL Recognized"

D

S

G

.

ISOTO P

G

ΩΩ

Ω

ΩΩ

• 100% Avalanche Tested • Popular SOT-227 Package

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

ADVANCED TECHNICAL

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

INFORMATION

APT10050JLC

1000

19

76
±30
±40
450

3.6

-55 to 150
300

19
50

2500

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

> I

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

x R

D(on)

DS(on)

2

(VGS = 10V, 0.5 I

, VGS = 0V)

DSS

= 0.8 V

DS

DSS

Max, VGS = 10V)

)

D[Cont.]

, VGS = 0V, TC = 125°C)

= 0V)

DS

MIN TYP MAX

1000

19

35

0.500
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5941 Rev - 12-99

DYNAMIC CHARACTERISTICS

APT10050JLC

Symbol

C

iss

C

oss

C

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Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current

ADVANCED TECHNICAL

Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

INFORMATION

)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

= -I

S

, dlS/dt = 100A/µs)

D[Cont.]

GS

= 10V

= 0V

@ 25°C

@ 25°C

DSS

DSS

MIN TYP MAX

5000

600
190
170

30
95
18
13
43

8.5

MIN TYP MAX

19
76

1.3

960

22.0

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

θJA

3

See MIL-STD-750 Method 3471

4

Starting T

+25°C, L = 13.85mH, R

j

=

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

r = 4.0 (.157)
(2 places)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5941 Rev - 12-99

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165)
(2 places)

3.3 (.129)

3.6 (.143)

* Emitter Collector

* Emitter

12.2 (.480)

8.9 (.350)

9.6 (.378)

1.95 (.077)

2.14 (.084)

Hex Nut M4
(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

*

Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

Gate

MIN TYP MAX

0.28
40

25Ω, Peak IL = 19A

G

=

25.2 (0.992)

25.4 (1.000)

UNIT

°C/W