ADVANCED POWER TECHNOLOGY APT10050B2LC Service Manual

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APT10050B2LC

APT10050LLC

1000V 21A 0.500W

POWER MOS VI

TM

Power MOS VITM is a new generation of low gate charge, high voltage

B2LC

T-MAX™

TO-264

N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C

TM

Lower gate charge coupled with Power MOS VI

optimized gate layout,

delivers exceptionally fast switching speeds.

• Identical Specifications: T-MAX™ or TO-264 Package

• Lower Gate Charge & Capacitance • Easier To Drive

and C

iss

rss

.

LLC

D

G

• 100% Avalanche Tested • Faster switching

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

ADVANCED TECHNICAL

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

INFORMATION

APT10050

1000

21

84
±30
±40
520

4.16

-55 to 150
300

21
50

2500

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

DSS

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

1000

21

35

0.500
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5929 rev A 8-2000

DYNAMIC CHARACTERISTICS APT10050 B2LC - LLC

Symbol

C
C
C

Q
Q
Q

t

d(on)

t

d(off)

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Test Conditions

V

VDS = 25V

f = 1 MHz

3

V

GS

VDD = 0.5 V

ID = 0.5 I

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t
Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

rr

rr

ADVANCED TECHNICAL

Reverse Recovery Time (IS = -I
Reverse Recovery Charge (I

(Body Diode)

INFORMATION

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

D[Cont.]

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

5000

600
190
170

30
95
18
13
43

8.5

MIN TYP MAX

21
84

1.3

960

22.0

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5929 rev A 8-2000

Characteristic

Junction to Case
Junction to Ambient

T-MAXTM (B2) Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

20.80 (.819)

Drain

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

These dimensions are equal to the TO-247 without the mounting hole.

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

15.49 (.610)

16.26 (.640)

2-Plcs.

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

3

See MIL-STD-750 Method 3471

4

Starting T

+25°C, L = 41.32mH, R

j

=

TO-264 (L) Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

5.38 (.212)

6.20 (.244)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source

Drain

2.01 (.079)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

Dimensions in Millimeters and (Inches)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.76 (.030)

1.30 (.051)

5.45 (.215) BSC

MIN TYP MAX

0.24
40

25W, Peak IL = 21A

G

=

19.51 (.768)

2.79 (.110)

3.18 (.125)

2-Plcs.

20.50 (.807)

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

Gate
Drain
Source

UNIT

°C/W