ADVANCED POWER TECHNOLOGY APT1004RCN Service Manual

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D

G

TO-254

S

TM

APT1004RCN 1000V 3.6A 4.00Ω

POWER MOS IV

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

P

D

TJ,T

STG

T

L

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

1

= 25°C

C

Gate-Source Voltage
Total Power Dissipation @ T

= 25°C

C

Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

APT1004RCN

1000

3.6

14.4
±30
125

1.0

-55 to 150
300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV
ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

(ON)

Drain-Source On-State Resistance

2

(V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

= 0V, ID = 250µA)

GS

2

(VGS = 10V, 0.5 ID [Cont.])

= 0.8 V

DS

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1
SOA2

I

LM

Characteristic

Safe Operating Area
Safe Operating Area
Inductive Current Clamped

= 0.4 V

V

DS

DSS

IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

Test Conditions

, IDS = PD / 0.4 V

, t = 1 Sec.

DSS

MIN TYP MAX

1000

3.6

4.00
250

1000
±100

2 4

MIN TYP MAX

125
125

3.6

UNIT

Volts
Amps
Ohms

µA

nA

Volts

UNIT

Watts

Amps

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

APT Website - http://www.advancedpower.com

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

050-0017 Rev C

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT1004RCN

Symbol

C

DC

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

f = 1 MHz

V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

VGS = 10V

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 1.8Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

SD

Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)

rr

Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)

rr

(Body Diode)

GS

= 0V

DSS

DSS

MIN TYP MAX

15 22
805 950
115 160

37 60

35 55

4.3 7
18 27
10 20
12 24
33 50
16 32

MIN TYP MAX

3.6

14.4

1.3

290 580

1.65 3.3

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-0017 Rev C

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

1.0

0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

D=0.5

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

MIN TYP MAX

1.0 10

UNIT

1.00

W/°C

50

APT1004RCN

5

VGS=5.5V,6V &10V

4

3

2

5V

4.5V

8

VGS=10V

6V

5.5V

5V

6

4

4.5V

1

, DRAIN CURRENT (AMPERES)

D

0

0 100 200 300 400 500 0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4V

, DRAIN CURRENT (AMPERES)

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

2

20

VDS> ID (ON) x RDS (ON)MAX.

230µ SEC. PULSE TEST

15

TJ = -55°C

TJ = +25°C

TJ = +125°C

10

5

, DRAIN CURRENT (AMPERES) I

D

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

0

0 2 4 6 8 0 2 4 6 8 10 12

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

4

3

2.5

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

2.0

1.5

1.0

VGS=10V

VGS=20V

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

DS

0.0

1.2

1.1

4V

1.0

2

0.9

1

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

, DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

050-0017 Rev C

20

10

5

OPERATION HERE

LIMITED BY RDS (ON)

10µS
100µS

1mS

10,000

1,000

APT1004RCN

C

iss

1

0.5

, DRAIN CURRENT (AMPERES)

D

0.1

TC =+25°C
TJ =+150°C
SINGLE PULSE

1 5 10 50 100 500 1000 0 10 20 30 40 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

10mS

100mS
DC

100

10

C

oss

C

rss

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

16

12

8

ID = ID [Cont.]

VDS=100V

VDS=200V

VDS=500V

100

50

20

T

=+150°CT

J

=+25°C

J

10

5

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 20 40 60 80 100 0 0.5 1.0 1.5 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

2

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

050-0017 Rev C

20.32 (.800)

20.06 (.790)

1.27 (.050)

1.02 (.040)

13.84 (.545)

13.59 (.535)

3.81 (.150) BSC

6.60 (.260)

6.32 (.249)

TO-254AA Package Outline

17.40 (.685)

16.89 (.665)

31.37 (1.235)

30.35 (1.195)

1.14 (.045)
.89 (.035)

Dimensions in Millimeters and (Inches)

Dia. Typ.

3 Leads

3.81 (.150) BSC

13.84 (.545)

13.59 (.535)

6.91 (.272)

6.81 (.268)

3.78 (.149)

3.53 (.139)

Drain
Source

Gate

Dia.