ADVANCED POWER TECHNOLOGY APT1003RBLL Service Manual

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APT1003RBLL

APT1003RSLL

ΩΩ

Ω

ΩΩ

POWER MOS 7 R MOSFET

®

Power MOS 7 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 and Qg. Power MOS 7

is a new generation of low loss, high voltage, N-Channel

®

combines lower conduction and switching losses

by significantly lowering R

DS(ON)

1000V 4A 3.00

D3PAK

TO-247

along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance •Easier To Drive

• Lower Gate Charge, Qg •TO-247 or Surface Mount D

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

DM

V

GSM

P

TJ,T

T

I

AR

E E

Parameter

Drain-Source Voltage Continuous Drain Current @ T

D

Pulsed Drain Current Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient Total Power Dissipation @ T

D

Linear Derating Factor Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

3

PAK Package

APT1003RBLL_SLL

1000

4

16 ±30 ±40 139

1.11

-55 to 150 300

4

10

425

G

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

D

S

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

R

DS(on)

I

DSS

I

GSS

V

GS(th)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

Drain-Source On-State Resistance Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (VGS = ±30V, V Gate Threshold Voltage (VDS = VGS, ID = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

2

(VGS = 10V, 2A)

= 800V, VGS = 0V, TC = 125°C)

DS

= 0V)

DS

MIN TYP MAX

1000

35

3.00 100 500

±100

UNIT

Volts

Ohms

µA

nA

Volts

050-7119 Rev A 1-2004

DYNAMIC CHARACTERISTICS APT1003RBLL_SLL

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time

Turn-off Delay Time Fall Time Turn-on Switching Energy

6

Turn-off Switching Energy Turn-on Switching Energy

6

Turn-off Switching Energy

Test Conditions

V

= 0V

GS

= 25V

V

DS

f = 1 MHz

V

= 10V

GS

= 500V

V

DD

= 4A @ 25°C

I

D

RESISTIVE SWITCHING

= 15V

V

GS

= 500V

V

DD

= 4A @ 25°C

I

D

= 1.6Ω

R

G

INDUCTIVE SWITCHING @ 25°C

= 667V, V

V

DD

= 4A, RG = 5Ω

I

D

INDUCTIVE SWITCHING @ 125°C

= 667V, V

V

DD

= 4A, RG = 5Ω

I

D

GS

= 15V

MIN TYP MAX

694 135

25 34

5

22

8 4

25 10 13 42 40 48

UNIT

pF

nC

ns

µJ

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dv

/

dt

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

1

Pulsed Source Current

(Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -I Reverse Recovery Time (IS = -I Reverse Recovery Charge (I

Peak Diode Recovery dv/

dt

4A, dl

D

= -I

S

5

/dt = 100A/µs)

S

4A, dl

D

S

4A)

D

/dt = 100A/µs)

MIN TYP MAX

4

16

1.3

560

3.2 10

UNIT

Amps

Volts

ns

µC

V/ns

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

1 Repetitive Rating: Pulse width limited by maximum junction

temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case Junction to Ambient

4 Starting T

dv

5

/

dt

device itself. I

6 Eon includes diode reverse recovery. See figures 18, 20.

+25°C, L = 53.13mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

≤ -I

S

4A

D

MIN TYP MAX

25Ω, Peak IL = 4A

G

=

di

/

≤ 700A/µs V

dt

UNIT

0.90

°C/W

40

≤ V

R

DSS TJ

≤ 150°C

050-7119 Rev A 1-2004

1.0

0.80

0.60

0.40

, THERMAL IMPEDANCE (°C/W)

JC

0.20

θ

Z

0

-5

10

0.9

0.7

0.5

0.3 SINGLE PULSE

0.1

0.05

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

1.0

Typical Performance Curves

Junction temp. (°C)

Power

(watts)

Case temperature. (°C)

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS

16

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

14

@ <0.5 % DUTY CYCLE

12

10

TJ = -55°C

RC MODEL

0.386

0.508

0.00336F

0.0903F

10

V

8

6

4

2

, DRAIN CURRENT (AMPERES)

D

0

0 5 10 15 20 25 30

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

1.40

NORMALIZED TO

V

= 10V @ 2A

GS

1.30 VGS=10V

1.20

=15 & 10V

GS

APT1003RBLL_SLL

7.5V

7V

6.5V

6V

5.5V

5V

8

6

4

, DRAIN CURRENT (AMPERES)

D

2

0

0123456789 012345678910

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R

TJ = +25°C

TJ = +125°C

4

3.5

1.10

1.00

VGS=20V

0.90

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.80

DS

(ON) vs DRAIN CURRENT

1.15

DS

1.10

3

2.5

2

1.5

1.05

1.00

0.95

1

, DRAIN CURRENT (AMPERES) I

D

0.5

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

T

C

ID = 2A

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

0.90

DSS

0.85

1.2

1.1

1.0

1.5

0.9

1.0

0.8

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 2 5 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-7119 Rev A 1-2004

16 10

OPERATION HERE

LIMITED BY RDS (ON)

4,000

APT1003RBLL_SLL

5

1

.5

, DRAIN CURRENT (AMPERES)

D

TC =+25°C TJ =+150°C SINGLE PULSE

.1

1 10 100 1000 0 10 20 30 40 50

V

DS

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 5 10 15 20 25 30 35 40 45 50 0.3 0.5 0.7 0.9 1.1 1.3 1.5

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE

25

20

15

10

VDD = 667V RG = 5Ω TJ = 125°C L = 100µH

(ns)

d(off)

and t

d(on)

5

0

012345678 012345678

FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT

90

VDD = 667V RG = 5Ω

80

TJ = 125°C

70

L = 100µH EON includes

60

diode reverse recovery.

50 40 30 20

SWITCHING ENERGY (µJ) t

10

0

012345678 05101520253035404550

FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

050-7119 Rev A 1-2004

1,000

100µS

100

C

iss

C

oss

1mS

10mS

C

rss

10

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

ID = 4A

100

VDS= 200V

T

=+150°C

J

T

VDS= 500V

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

VDS= 800V

10

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

1

DR

I

70

t

d(off)

60

50

40

(ns)

f

30

and t

r

=+25°C

J

VDD = 667V RG = 5Ω TJ = 125°C L = 100µH

t

f

20

t

d(on)

10

t

r

0

(A) ID (A)

I

D

140

VDD = 667V ID = 4A

120

E

off

TJ = 125°C L = 100µH

EON includes

100

diode reverse recovery.

E

on

80

60

E

off

E

on

40

SWITCHING ENERGY (µJ) t

20

0

I

(A) RG, GATE RESISTANCE (Ohms)

D

Typical Performance Curves



APT1003RBLL_SLL

10%

Gate Voltage

t

d(on)

t

r

5%

90%

10%

Drain Current

5%

Drain Voltage

Switching Energy

Figure 18, Turn-on Switching Waveforms and Definitions

APT15DF100

V

DD

I

CE

C

TJ125°C

90%

t

d(off)

90%

t

f

10%

Gate Voltage

Drain Voltage

0

Drain Current

TJ125°C

Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

G

D.U.T.

Figure 20, Inductive Switching Test Circuit

TO-247 Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

6.15 (.242) BSC

20.80 (.819)

Drain

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

5.45 (.215) BSC 2-Plcs.

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate Drain Source

Drain

(Heat Sink)

D3PAK Package Outline

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

0.46 (.018)

0.56 (.022)

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

{3 Plcs}

1.22 (.048)

1.32 (.052)

15.95 (.628)

16.05(.632)

Revised



Dimensions in Millimeters (Inches)

4/18/95

1.04 (.041)

1.15(.045)

13.79 (.543)

13.99(.551)

1.27 (.050)

1.40 (.055)

1.98 (.078)

2.08 (.082)

5.45 (.215) BSC {2 Plcs.}

Source

Drain

Gate

13.41 (.528)

13.51(.532)

Revised 8/29/97

3.81 (.150)

4.06 (.160) (Base of Lead)

Heat Sink (Drain) and Leads are Plated

11.51 (.453)

11.61 (.457)

050-7119 Rev A 1-2004

ADVANCED POWER TECHNOLOGY APT1003RBLL Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual