ADVANCED POWER TECHNOLOGY APT1003RBLL Service Manual

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APT1003RBLL

APT1003RSLL

ΩΩ

Ω

ΩΩ

POWER MOS 7 R MOSFET

®

Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

is a new generation of low loss, high voltage, N-Channel

®

®

combines lower conduction and switching losses

by significantly lowering R

DS(ON)

1000V 4A 3.00

D3PAK

TO-247

along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance •Easier To Drive

• Lower Gate Charge, Qg •TO-247 or Surface Mount D

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ T

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

3

PAK Package

APT1003RBLL_SLL

1000

4

16
±30
±40
139

1.11

-55 to 150
300

4

10

425

G

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

D

S

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

R

DS(on)

I

DSS

I

GSS

V

GS(th)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

2

(VGS = 10V, 2A)

= 800V, VGS = 0V, TC = 125°C)

DS

= 0V)

DS

MIN TYP MAX

1000

35

3.00
100
500

±100

UNIT

Volts

Ohms

µA

nA

Volts

050-7119 Rev A 1-2004

DYNAMIC CHARACTERISTICS APT1003RBLL_SLL

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

on

E

off

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time

Turn-off Delay Time
Fall Time
Turn-on Switching Energy

6

Turn-off Switching Energy
Turn-on Switching Energy

6

Turn-off Switching Energy

Test Conditions

V

= 0V

GS

= 25V

V

DS

f = 1 MHz

V

= 10V

GS

= 500V

V

DD

= 4A @ 25°C

I

D

RESISTIVE SWITCHING

= 15V

V

GS

= 500V

V

DD

= 4A @ 25°C

I

D

= 1.6Ω

R

G

INDUCTIVE SWITCHING @ 25°C

= 667V, V

V

DD

= 4A, RG = 5Ω

I

D

INDUCTIVE SWITCHING @ 125°C

= 667V, V

V

DD

= 4A, RG = 5Ω

I

D

GS

GS

= 15V

= 15V

MIN TYP MAX

694
135

25
34

5

22

8
4

25
10
13
42
40
48

UNIT

pF

nC

ns

µJ

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

dv

/

dt

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

1

Pulsed Source Current

(Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -I
Reverse Recovery Time (IS = -I
Reverse Recovery Charge (I

Peak Diode Recovery dv/

dt

4A, dl

D

= -I

S

5

/dt = 100A/µs)

S

4A, dl

D

S

4A)

D

/dt = 100A/µs)

MIN TYP MAX

4

16

1.3

560

3.2
10

UNIT

Amps

Volts

ns

µC

V/ns

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

1 Repetitive Rating: Pulse width limited by maximum junction

temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

4 Starting T

dv

5

/

dt

device itself. I

6 Eon includes diode reverse recovery. See figures 18, 20.

+25°C, L = 53.13mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

≤ -I

S

4A

D

MIN TYP MAX

25Ω, Peak IL = 4A

G

=

di

/

≤ 700A/µs V

dt

UNIT

0.90

°C/W

40

≤ V

R

DSS TJ

≤ 150°C

050-7119 Rev A 1-2004

1.0

0.80

0.60

0.40

, THERMAL IMPEDANCE (°C/W)

JC

0.20

θ

Z

0

-5

10

0.9

0.7

0.5

0.3
SINGLE PULSE

0.1

0.05

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

1.0