ADVANCED POWER TECHNOLOGY APT10026RKVR Service Manual

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APT10026RKVR

1000V 0.48A 26.0W

POWER MOS V

®

D

S

1000

0.48

1.92
±30
±40

31

.25

300

TBD
TBD

TBD

TO-220

D

G

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

G

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular TO-220 Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

ADVANCE TECHNICAL

1

1

(Repetitive and Non-Repetitive)

INFORMATION

= 25°C

C

1

4

APT10026RKVR

-55 to 150

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

1000

0.48

24

26.0
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5983 Rev - 2-2002

DYNAMIC CHARACTERISTICS



APT10026RKVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

V

= 0.5 V

DD

ID = 20ma @ 25°C

VGS = 10V

VDD = 0.5 V

ID = 20ma @ 25°C

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

ADVANCE TECHNICAL

(Body Diode)

INFORMATION

S

= -I

, dlS/dt = 100A/ µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

= 1.6Ω

DSS

DSS

MIN TYP MAX

215

27
11
15

1
7

9
11
57
86

MIN TYP MAX

0.48

1.92

1.3

224

0.53

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

θJA

3

See MIL-STD-750 Method 3471

4

Starting T

+25°C, L = TBD, R

j

=

TO-220AC Package Outline

1.39 (.055)

0.51 (.020)

3.42 (.135)

16.51 (.650)

14.23 (.560)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5983 Rev - 2-2002

2.54 (.100)

0.50 (.020)

0.41 (.016)

2.92 (.115)

2.04 (.080)

4.82 (.190)

3.56 (.140)

Dimensions in Millimeters and (Inches)

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

4.08 (.161) Dia.

3.54 (.139)

14.73 (.580)

12.70 (.500)

1.01 (.040) 3-Plcs.

0.38 (.015)

Drain

6.35 (.250)
MAX.

2.79 (.110)

2.29 (.090)

5.33 (.210)

4.83 (.190)




MIN TYP MAX

4.0
80

25Ω, Peak IL = .48A

G

=

10.66 (.420)

9.66 (.380)

5.33 (.210)

4.83 (.190)

6.85 (.270)

5.85 (.230)

Gate
Drain
Source

1.77 (.070) 3-Plcs.

1.15 (.045)

UNIT

°C/W