ADVANCED POWER TECHNOLOGY APT10026L2FLL Service Manual

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APT10026L2FLL

1000V 38A 0.260W

POWER MOS 7

TM

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

TM

combines lower conduction and switching losses

TM

by significantly lowering R

FREDFET

TO-264

Max

DS(ON)

along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

• Lower Input Capacitance •Increased Power Dissipation

D

• Lower Miller Capacitance •Easier To Drive

• Lower Gate Charge, Qg • Popular TO-264

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

STATIC ELECTRICAL CHARACTERISTICS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ T

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

1

(Repetitive and Non-Repetitive)

ADVANCE TECHNICAL

= 25°C

C

= 25°C

C

1

4

INFORMATION

MAX Package

APT10026L2FLL

-55 to 150

1000

38
152
±30
±40
890

7.12

300

38

50

3200

G

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33 ) 5 57 9215 15 FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

1000

38

35

0.260
250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7112 Rev- 9-2001

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

V

GS

VDD = 0.5 V

ID = I

[Cont.] @ 25°C

D

RG =0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

= 0V

GS

= 15V

DSS

DSS

APT10026L2FLL

MIN TYP MAX

7680
1270

252
294

45

196

17

8

39

9

UNIT

pF

nC

ns

Symbol

I

I

SM

V

dv

t

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

ADVANCE TECHNICAL

1

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -ID [Cont.], di/dt = 100A/µs)

(I

S

(VGS = 0V, IS = -ID [Cont.])

5

INFORMATION

Reverse Recovery Charge

Q

rr

(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current

I

RRM

(IS = -ID [Cont.], di/dt = 100A/µs)

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

APT Reserves the right to change,
without notice, the specifications
and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

TO-264 MAXTM(L2) Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

MIN TYP MAX

38

152

1.3
18

T

= 25°C 310

j

T

= 125°C 625

j

T

= 25°C 2.0

j

T

= 125°C 6.0

j

T

= 25°C 15

j

T

= 125°C 2.6

j

MIN TYP MAX

0.14
40

3

See MIL-STD-750 Method 3471

4

Starting T

5dv

/

dt

device itself. I

+25°C, L = 4.43mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

£ -I

S

19.51 (.768)

20.50 (.807)

D[Cont.

di

/

dt

]

25W, Peak IL = 38A

G

=

£ 700A/µs V

£ V

R

DSS

T

UNIT

Amps

Volts

V/ns

ns

µC

Amps

UNIT

°C/W

£ 150°C

J

5.79 (.228)

6.20 (.244)

25.48 (1.003)

Drain

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-7112 Rev- 9-2001

26.49 (1.043)

2.29 (.090)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC
2-Plcs.

2.69 (.106)

Gate
Drain
Source