ADVANCED POWER TECHNOLOGY APT10026JN Service Manual

"UL Recognized" File No. E145592 (S)

查询APT10026JN供应商

D

G

S

G

S

D

SOT-227

S

ISOTOP

®

POWER MOS IV

®

APT10026JN 1000V 33A 0.26Ω

SINGLE DIE ISOTOP® PACKAGE

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

IDM, l

V

P

TJ,T

DSS

I

D

GS

D

STG

T

L

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

LM

Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

1

= 25°C

C

and Inductive Current Clamped

= 25°C

C

= 25°C unless otherwise specified.

C

APT

10026JN

1000

UNIT

Volts

33

132

Amps

±30
690

5.52

Volts

Watts

W/°C

-55 to 150
300

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current
(V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V

2

= VGS, ID = 5.0mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT10026JN

APT10026JN 33

APT10026JN 0.26

1000

250
1000
±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R
R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic

Junction to Case

ΘJC

Case to Sink

ΘCS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)

MIN TYP MAX

0.05

UNIT

0.18

°C/W

050-0038 Rev F

DYNAMIC CHARACTERISTICS

APT10026JN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

Characteristic / Test Conditions

Continuous Source Current

S

(Body Diode)
Pulsed Source Current

(Body Diode)
Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

1

2

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

t

Q

MIN TYP MAX

GS

= 0V

11610 14000

1345 1880

415 620

= 10V

DSS

465 700

83 125
61 90

= 15V

DSS

21 40
19 40
70 105
14 30

MIN TYP MAX

APT10026JN

APT10026JN 132

1250 2000

49 70

33

1.8

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

PACKAGE CHARACTERISTICS

L
L

Characteristic / Test Conditions

Internal Drain Inductance

D

Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)

S

(Measured From Drain Terminal to Center of Die.)

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.

0.2
D=0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.0005

0.1

0.05

0.01

0.005

0.001

MIN TYP MAX

2500

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

10

1.0 10

Symbol

V

Isolation

C

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

050-0038 Rev F

UNIT

3

nH

5

Volts

70

13

t

1

t

2

t

1

/

t

2

+ T

θJC

C

pF

lb•in

APT10026JN

80

VGS=6, 8, 10, 15V

80

VGS=6, 8, 10, 15V

60

40

20

, DRAIN CURRENT (AMPERES)

D

5.5V

4.5V

5V

60

40

20

, DRAIN CURRENT (AMPERES)

D

4V

0

0 100 200 300 400 500 0 5 10 15 20 25 30

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

TJ = -55°C

80

TJ = +25°C
TJ = +125°C

60

40

3.0

2.5

2.0

1.5

TJ = 25°C

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

VGS=10V

VGS=20V

TJ = +125°C

20

, DRAIN CURRENT (AMPERES) I

D

TJ = +25°C

0

0 2 4 6 8 10 0 20 40 60 80 160
V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

35

TJ = -55°C

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.5

DS

(ON) vs DRAIN CURRENT

DS

1.2

5.5V

5V

4.5V

4V

30

1.1

25

20

15

1.0

0.9

10

, DRAIN CURRENT (AMPERES) I

5

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

050-0038 Rev F

200
100

OPERATION HERE

50

LIMITED BY R

(ON)

DS

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

10µS

100µS

1mS

10mS

100mS
DC

50,000

10,000

5,000

1,000

500

APT10026JN

C

iss

C

oss

C

rss

.1

1 5 10 50 100 5001000 .1 .5 1 5 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

100

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

16

12

ID = ID [Cont.]

VDS=100V

VDS=200V

VDS=500V

8

400

100

T

=+150°C

J

T

=+25°C

J

50

T

=-55°C

J

10

5

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 200 400 600 800 1000 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

APT Reserves the right to change, without notice, the specifications and information contained herein.

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

12.2 (.480)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

8.9 (.350)

9.6 (.378)
Hex Nut M4

(4 places)

®

ISOTOP

050-0038 Rev F

r = 4.0 (.157)

(2 places)

is a Registered Trademark of SGS Thomson.

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

4.0 (.157)

4.2 (.165)
(2 places)

3.3 (.129)

3.6 (.143)

* Source Drain

* Source

Dimensions in Millimeters and (Inches)

0.75 (.030)

0.85 (.033)

1.95 (.077)

2.14 (.084)

25.2 (0.992)

12.6 (.496)

12.8 (.504)

*

Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

25.4 (1.000)

Gate