ADVANCED POWER TECHNOLOGY APT10026JN Service Manual
"UL Recognized" File No. E145592 (S)
查询APT10026JN供应商
D
G
S
G
S
D
SOT-227
S
ISOTOP
®
POWER MOS IV
®
APT10026JN 1000V 33A 0.26Ω
SINGLE DIE ISOTOP® PACKAGE
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS All Ratings: T
Symbol
V
IDM, l
V
P
TJ,T
DSS
I
D
GS
D
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
LM
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
= 25°C
C
and Inductive Current Clamped
= 25°C
C
= 25°C unless otherwise specified.
C
APT
10026JN
1000
UNIT
Volts
33
132
Amps
±30
690
5.52
Volts
Watts
W/°C
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
DSS
(V
= 0V, ID = 250 µA)
GS
On State Drain Current
(V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Drain-Source On-State Resistance
(ON)
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
2
= VGS, ID = 5.0mA)
DS
2
= V
DS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
APT10026JN
APT10026JN 33
APT10026JN 0.26
1000
250
1000
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R
R
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 557 92 15 15 FAX: (33)556 47 9761
Characteristic
Junction to Case
ΘJC
Case to Sink
ΘCS
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN TYP MAX
0.05
UNIT
0.18
°C/W
050-0038 Rev F
DYNAMIC CHARACTERISTICS
APT10026JN
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SM
Characteristic / Test Conditions
Continuous Source Current
S
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
1
2
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
= -ID [Cont.], dlS/dt = 100A/µs)
S
Symbol
I
V
t
Q
MIN TYP MAX
GS
= 0V
11610 14000
1345 1880
415 620
= 10V
DSS
465 700
83 125
61 90
= 15V
DSS
21 40
19 40
70 105
14 30
MIN TYP MAX
APT10026JN
APT10026JN 132
1250 2000
49 70
33
1.8
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
PACKAGE CHARACTERISTICS
L
L
Characteristic / Test Conditions
Internal Drain Inductance
D
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
S
(Measured From Drain Terminal to Center of Die.)
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
0.2
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.0005
0.1
0.05
0.01
0.005
0.001
MIN TYP MAX
2500
Note:
DM
P
Duty Factor D =
Peak TJ = PDM x Z
-1
10
1.0 10
Symbol
V
Isolation
C
Isolation
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
050-0038 Rev F
UNIT
3
nH
5
Volts
70
13
t
1
t
2
t
1
/
t
2
+ T
θJC
C
pF
lb•in
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