ADVANCED POWER TECHNOLOGY APT10025JVR Service Manual

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APT10025JVR

1000V 34A 0.250Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular SOT-227 Package

S

G

®

ISOTOP

G

D

®

S

SOT-227

"UL Recognized"

D

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage Continuous Drain Current @ T Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

APT10025JVR

1000

34

136

±30 ±40

700

5.6

-55 to 150 300

34 50

3600

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 5792 15 15 FAX: (33) 556 47 9761

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current Drain-Source On-State Resistance Zero Gate Voltage Drain Current (VDS = V Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (VGS = ±30V, V Gate Threshold Voltage (VDS = VGS, ID = 5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

1000

34

24

0.250 100 500

±100

UNIT

Volts

Amps Ohms

µA

nA

Volts

050-5580 Rev A

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT10025JVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

15000 18000

1360 1900

710 1065 660 990

51 75

250 375

22 44 20 40 97 145 16 32

MIN TYP MAX

34

136

1.3

1300

38

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5580 Rev A

THERMAL/PACKAGE CHARACTERISTICS

Symbol

R R

V

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

3

See MIL-STD-750 Method 3471

4

Starting T

0.2 D=0.5

0.2

0.1

0.05

0.02

0.01 SINGLE PULSE

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

, THERMAL IMPEDANCE (°C/W) Z

JC

θ

0.0005

0.1

0.05

0.01

0.005

0.001

10

+25°C, L = 6.23mH, R

j

=

-1

10

MIN TYP MAX

0.18 40

2500

13

25Ω, Peak IL = 34A

G

=

1.0 10

UNIT

°C/W

Volts

lb•in

APT10025JVR

80

VGS=6V, 7V, 10V & 15VVGS=6V, 7V, 10V & 15V

60

5V

40

20

, DRAIN CURRENT (AMPERES)

D

4.5V

40

20

, DRAIN CURRENT (AMPERES)

D

4.5V

4V

0

0 100 200 300 400 500 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

80

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

60

TJ = -55°C

40

20

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +125°C

TJ = +25°C

02468 020406080100

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

35

1.20

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.15

1.10

1.05

VGS=10V

VGS=20V

1.00

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.95

DS

1.15

5V

4V

30

25

1.10

1.05

20

1.00

15

, DRAIN-TO-SOURCE BREAKDOWN R

0.95

0.90

DSS

0.85

1.2

1.1

10

, DRAIN CURRENT (AMPERES) I

5

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5580 Rev A

200 100

50

10

, DRAIN CURRENT (AMPERES)

D

20

OPERATION HERE

LIMITED BY RDS (ON)

5

1

TC =+25°C

.5

TJ =+150°C SINGLE PULSE

.1

1 5 10 50 100 500 1000 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

ID = ID [Cont.]

10µS

100µS

1mS

10mS

100mS DC

60,000

10,000

5,000

1,000

500

100

C

iss

C

oss

C

rss

APT10025JVR

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 250 500 750 1000 1250 1500 0.2 0.4 0.6 0.8 1.0 1.2 1.4

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

VDS=100V

VDS=200V

VDS=500V

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

50

10

5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

1

DR

I

T

=+150°C T

J

=+25°C

J

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161) W=4.3 (.169)

H=4.8 (.187) H=4.9 (.193)

(4 places)

12.2 (.480)

8.9 (.350)

9.6 (.378) Hex Nut M4

(4 places)

r = 4.0 (.157)

(2 places)

14.9 (.587)

15.1 (.594)

4.0 (.157)

4.2 (.165) (2 places)

3.3 (.129)

3.6 (.143)

* Source Drain

0.75 (.030)

0.85 (.033)

1.95 (.077)

2.14 (.084)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

* Source

Gate

Dimensions in Millimeters and (Inches)

®

ISOTOP

is a Registered Trademark of SGS Thomson.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5580 Rev A

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

25.2 (0.992)

12.6 (.496)

25.4 (1.000)

12.8 (.504)

*

Source terminals are shorted internally. Current handling capability is equal for either Source terminal.

"UL Recognized" File No. E145592

ADVANCED POWER TECHNOLOGY APT10025JVR Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual