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APT10021JFLL
1000V 37A 0.210W
POWER MOS 7
TM
FREDFET
S
S
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7
TM
combines lower conduction and switching losses
TM
by significantly lowering R
DS(ON)
G
D
SOT-227
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
ISOTOP
®
"UL Recognized"
D
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg •Popular SOT-227 Package
•
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
Gate-Source Voltage Transient
Total Power Dissipation @ T
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
ADVANCE TECHNICAL
1
1
(Repetitive and Non-Repetitive)
= 25°C
C
= 25°C
C
1
4
INFORMATION
G
APT10021JFLL
1000
37
148
±30
±40
690
5.52
-55 to 150
300
37
50
3600
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33)5 57 92 15 15 FAX: (33)5 5647 9761
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
2
(V
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
MIN TYP MAX
1000
37
35
0.210
250
1000
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-7035 Rev A 8-2001
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 V
ID = I
[Cont.] @ 25°C
D
V
GS
VDD = 0.5 V
ID = I
[Cont.] @ 25°C
D
RG = 0.6W
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
= 0V
GS
= 15V
DSS
DSS
APT10021JFLL
MIN TYP MAX
9980
1650
328
382
59
254
18
9
46
11
UNIT
pF
nC
ns
Symbol
I
I
SM
V
dv
t
Q
I
RRM
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
Pulsed Source Current
Diode Forward Voltage
SD
Peak Diode Recovery dv/
/
dt
ADVANCE TECHNICAL
1
(Body Diode)
2
dt
Reverse Recovery Time
rr
= -ID [Cont.], di/dt = 100A/µs)
(I
S
Reverse Recovery Charge
rr
(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
(VGS = 0V, IS = -ID [Cont.])
5
INFORMATION
T
= 25°C 300
j
T
= 125°C 600
j
T
= 25°C 1.8
j
T
= 125°C 7.4
j
T
= 25°C 16
j
T
= 125°C 30
j
THERMAL CHARACTERISTICS
Symbol
R
R
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
qJC
Junction to Ambient
qJA
3
See MIL-STD-750 Method 3471
4
Starting T
5dv
/
dt
device itself. I
+25°C, L = 5.26mH, R
j
=
numbers reflect the limitations of the test circuit rather than the
£ -I
S
SOT-227 (ISOTOP®) Package Outline
D[Cont.
MIN TYP MAX
MIN TYP MAX
25W, Peak IL = 37A
G
=
di
/
£ 700A/µs V
dt
]
R
£ V
37
148
1.3
18
0.18
40
DSS
T
UNIT
Amps
Volts
V/ns
ns
µC
Amps
UNIT
°C/W
£ 150°C
J
11.8 (.463)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
050-7035 Rev A 8-2001
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
* Source Drain
* Source
12.2 (.480)
8.9 (.350)
9.6 (.378)
1.95 (.077)
2.14 (.084)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
*
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
25.2 (0.992)
25.4 (1.000)