ADVANCED POWER TECHNOLOGY APT1001RSVR Service Manual

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APT1001RSVR

1000V 11A 1.000Ω

POWER MOS V

®

D3PAK

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

3

• Lower Leakage • Surface Mount D

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

DM

V

GSM

P

TJ,T

T

I

AR

E E

Parameter

Drain-Source Voltage Continuous Drain Current @ T

D

Pulsed Drain Current Gate-Source Voltage Continuous

GS

1

= 25°C

C

Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

1

Avalanche Current Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

(Repetitive and Non-Repetitive)

1

4

PAK Package

®

D

G

S

APT1001RSVR

1000

UNIT

Volts

11 44

Amps

±30 ±40

Volts

280

2.24

-55 to 150

Watts

W/°C

°C

300

11

Amps

30

1210

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 579215 15 FAX: (33) 556 479761

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

1000

11

24

1.00 25

250

±100

UNIT

Volts

Amps Ohms

µA

nA

Volts

050-5578 Rev B

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT1001RSVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 1.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

3050 3660

280 390 135 200 150 225

16 24 70 105 12 24 11 22 55 85 12 24

MIN TYP MAX

11 44

1.3

700

9

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5578 Rev B

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case Junction to Ambient

θJA

0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

3

See MIL-STD-750 Method 3471

4

Starting T

D=0.5

0.2

0.1

0.05

0.02

0.01 SINGLE PULSE

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

+25°C, L = 20mH, R

j

=

-1

10

MIN TYP MAX

0.45 40

25Ω, Peak IL = 11A

G

=

1.0 10

UNIT

°C/W

APT1001RSVR

20

16

VGS=6V, 10V & 15V

20

VGS=15V

16

VGS=6V & 10V

5V

12

4.5V

8

4

, DRAIN CURRENT (AMPERES)

D

0

0 100 200 300 400 500 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4V

3.5V

8

4

, DRAIN CURRENT (AMPERES)

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

40

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

30

TJ = -55°C

TJ = +125°C

1.5

1.4

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

VGS=10V

20

1.2 VGS=20V

TJ = +125°C

10

, DRAIN CURRENT (AMPERES) I

D

TJ = -55°C

TJ = +25°C

0

02468 051015202530

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

12

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.8

DS

1.15

4.5V

4V

3.5V

10

1.10

8

1.05

6

1.00

4

, DRAIN CURRENT (AMPERES) I

2

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

0.95

DSS

0.90

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5578 Rev B

50

OPERATION HERE

LIMITED BY RDS (ON)

10

5

1

.5

TC =+25°C

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C SINGLE PULSE

10µS 100µS

1mS

10mS

100mS DC

11,000

5,000

1,000

500

100

APT1001RSVR

C

iss

C

oss

C

rss

.1

1 5 10 50 100 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1.0 1.2

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=100V

VDS=200V

VDS=500V

50

10

5

1

.5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

.1

I

T

=+150°C T

J

=+25°C

J

D3PAK Package Outline

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

15.95 (.628)

16.05 (.632)

1.04 (.041)

1.15 (.045)

13.41 (.528)

13.51 (.532)

Drain

(Heat Sink)

13.79 (.543)

13.99 (.551)

1.27 (.050)

1.40 (.055)

1.98 (.078)

2.08 (.082)

0.46 (.018)

0.56 (.022)

0.020 (.001)

0.178 (.007)

2.67 (.105)

2.84 (.112)

Revised

4/18/95

{3 Plcs}

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC {2 Plcs.}

Source

Drain

Gate

Dimensions in Millimeters (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5578 Rev B

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

Revised 8/29/97

11.51 (.453)

11.61 (.457)

3.81 (.150)

4.06 (.160) (Base of Lead)

Heat Sink (Drain) and Leads are Plated

ADVANCED POWER TECHNOLOGY APT1001RSVR Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual