ADVANCED POWER TECHNOLOGY APT1001RBVR Service Manual

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APT1001RBVR

1000V 11A 1.000Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular TO-247 Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

1

= 25°C

C

Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

1

Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

(Repetitive and Non-Repetitive)

1

4

APT1001RBVR

TO-247

G

1000

11
44

±30
±40

280

2.24

-55 to 150
300

11
30

1210

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

MIN TYP MAX

1000

11

24

1.00
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5572 Rev C

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT1001RBVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 1.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

3050 3660

280 390
135 200
150 225

16 24
70 105
12 24
11 22
55 85
12 24

MIN TYP MAX

11
44

1.3

700

9

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5572 Rev C

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

θJA

0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

3

See MIL-STD-750 Method 3471

4

Starting T

D=0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

+25°C, L = 20mH, R

j

=

-1

10

MIN TYP MAX

0.45
40

25Ω, Peak IL = 11A

G

=

1.0 10

UNIT

°C/W

APT1001RBVR

20

16

VGS=6V, 10V & 15V

20

VGS=15V

16

VGS=6V & 10V

5V

12

12

4.5V

8

4

, DRAIN CURRENT (AMPERES)

D

0

0 100 200 300 400 500 0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4V

3.5V

8

4

, DRAIN CURRENT (AMPERES)

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

40

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

30

TJ = -55°C

TJ = +125°C

1.5

1.4

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

VGS=10V

20

1.2
VGS=20V

TJ = +125°C

10

, DRAIN CURRENT (AMPERES) I

D

TJ = -55°C

TJ = +25°C

0

02468 051015202530

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

12

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.8

DS

1.15

4.5V

4V

3.5V

10

1.10

8

1.05

6

1.00

4

, DRAIN CURRENT (AMPERES) I

2

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

0.95

DSS

0.90

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5572 Rev C

50

OPERATION HERE

LIMITED BY RDS (ON)

10

5

1

.5

TC =+25°C

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

10µS
100µS

1mS

10mS

100mS
DC

11,000

5,000

1,000

500

100

APT1001RBVR

C

iss

C

oss

C

rss

.1

1 5 10 50 100 5001000 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1.0 1.2

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=100V

VDS=200V

VDS=500V

50

50

10

5

1

.5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

.1

I

T

=+150°C T

J

=+25°C

J

TO-247 Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

6.15 (.242) BSC

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

20.80 (.819)

21.46 (.845)

Drain

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC
2-Plcs.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5572 Rev C

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source