ADVANCED POWER TECHNOLOGY APT1001R1BN, APT1001R3BN Service Manual

查询APT1001R1BN供应商

D

G

S

TO-247

APT1001R1BN 1000V 10.5A 1.10Ω
APT1001R3BN 1000V 10.0A 1.30Ω

POWER MOS IV

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSF ETS

MAXIMUM RATINGS All Ratings: T

Symbol

V

I

V

P

TJ,T

DSS

I

D

DM

GS

D

STG

T

L

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

®

= 25°C unless otherwise specified.

C

APT APT

1001RBN 1001R3BN

1000 1000

= 25°C

C

1

10.5 10
42 40

±30

= 25°C

C

310

2.48

-55 to 150
300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

DSS

(V

= 0V, ID = 250 µA)

GS

On State Drain Current
(V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

Drain-Source On-State Resistance

(ON)

(VGS = 10V, 0.5 ID [Cont.])

2

Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V

= VGS, ID = 1.0mA)

DS

2

= V

DS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

APT1001R1BN

1000

APT1001R3BN 1000
APT1001R1BN 10.5
APT1001R3BN 10
APT1001R1BN 1.10
APT1001R3BN 1.30

250
1000
±100

24

UNIT

Volts

Amps

Ohms

µA

nA

Volts

THERMAL CHARACTERISTICS

Symbol

R
R

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

UNIT

0.40

°C/W

40

050-0007 Rev C

DYNAMIC CHARACTERISTICS

APT1001R1/1001R3BN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 1.8Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

t

Characteristic / Test Conditions / Part Number

Continuous Source Current

S

(Body Diode)
Pulsed Source Current

1

(Body Diode)

2

Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

Q

MIN TYP MAX

GS

= 0V

2460 2950

360 500
105 160

= 10V

DSS

90 130

9.3 14
47 70

= 15V

DSS

15 30
16 32
64 95
24 48

MIN TYP MAX

APT1001R1BN
APT1001R3BN 10
APT1001R1BN 42
APT1001R3BN 40

636 1200

4.5 11

10.5

1.3

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1
SOA2

I

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-0007 Rev C

Characteristic

Safe Operating Area
Safe Operating Area

Inductive Current Clamped

LM

1.0

0.5
D=0.5

0.2

0.1

0.05

0.02

0.01

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.1

0.05

0.01

0.005

0.001
10

SINGLE PULSE

-4

10

Test Conditions / Part Number

V

= 0.4 V

DS

= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

I

DS

, IDS = PD / 0.4 V

DSS

, t = 1 Sec.

DSS

APT1001R1BN 42
APT1001R3BN 40

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

10

MIN TYP MAX

310
310

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

-1

1.0 10

UNIT

Watts

Amps

t

1

t

2

t

1

/

t

2

+ T

θJC

C

APT1001R1/1001R3BN

16

VGS=10V

12

6V

5.5V

16

VGS=10V

12

6V

5.5V

8

8

5V

4

, DRAIN CURRENT (AMPERES)

D

0

0 100 200 300 400 500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4.5V

4V

4

, DRAIN CURRENT (AMPERES)

D

0

0 4 8 12 16 20

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

20

16

V > I (ON) x R (ON)MAX.

DS D DS

230µ SEC. PULSE TEST

TJ = -55°C

TJ = +25°C

TJ = +125°C

12

8

4

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

TJ = +125°C

TJ = +25°C

0 2 4 6 8

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

12

2.5

2.0

1.5

TJ = 25°C

2µ SEC. PULSE TEST

NORMALIZED TO

= 10V @ 0.5 ID [Cont.]

V

GS

VGS=10V

1.0

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

0 6 12 18 24 30

(ON) vs DRAIN CURRENT

DS

1.2

VGS=20V

5V

4.5V

4V

10

8

APT1001R1BN

1.1

1.0

APT1001R3BN

6

0.9

4

, DRAIN CURRENT (AMPERES) I

2

D

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.7

-50 -25 0 25 50 75 100 125 150

1.4

1.2

1.0

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.6

GS

V

0.4

-50 -25 0 25 50 75 100 125 150

050-0007 Rev C

60

10

APT1001R1BN
APT1001R3BN

OPERATION HERE

LIMITED BY R

APT1001R1BN
APT1001R3BN

(ON)

DS

10µS

100µS

1mS

10mS

1

, DRAIN CURRENT (AMPERES)

D

TC =+25°C
TJ =+150°C
SINGLE PULSE

100mS

DC

APT1001R1/1001R3BN

.1

1 5 10 50 100 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

VDS=100V

VDS=200V

VDS=500V

8

10,000

C

iss

1,000

C

oss

C

100

10

0 10 20 30 40 50

rss

100

50

20

TJ = +150°C TJ = +25°C

10

5

APT1001R1/1001R3BN

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 40 80 120 160 200

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

2

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

0 .5 1.0 1.5 2.0

TO-247AD Package Outline

4.69 (.185)

Drain

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.55 (.140)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source

050-0007 Rev C

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC
2-Plcs.

Dimensions in Millimeters and (Inches)