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APT1001R1HVR
1000V 9A 1.100Ω
POWER MOS V
®
TO-258
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • 100% Avalanche Tested
• Lower Leakage • Popular TO-258 Package
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
I
DM
V
V
GSM
P
TJ,T
T
I
AR
E
E
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
D
Pulsed Drain Current
Gate-Source Voltage Continuous
GS
1
= 25°C
C
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
D
Linear Derating Factor
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
1
Avalanche Current
Repetitive Avalanche Energy
AR
Single Pulse Avalanche Energy
AS
(Repetitive and Non-Repetitive)
1
4
®
APT1001R1HVR
G
1000
9
36
±30
±40
200
1.6
-55 to 150
300
9
30
1210
D
S
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 579215 15 FAX: (33) 556 47 9761
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Current
2
(V
DS
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±20V, V
= 0V, ID = 250µA)
GS
> I
x R
D(on)
2
(VGS = 10V, 0.5 I
= 0.8 V
DS
Max, VGS = 10V)
DS(on)
D[Cont.]
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
MIN TYP MAX
1000
9
24
1.100
25
250
±100
UNIT
Volts
Amps
Ohms
µA
nA
Volts
050-5812 Rev A
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT1001R1HVR
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
VDS = 25V
f = 1 MHz
V
GS
VDD = 0.5 V
ID = I
D[Cont.]
VGS = 15V
VDD = 0.5 V
ID = I
D[Cont.]
RG = 1.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
I
SM
V
t
Q
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
S
1
Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I
SD
Reverse Recovery Time (IS = -I
rr
Reverse Recovery Charge (I
rr
(Body Diode)
S
= -I
, dlS/dt = 100A/µs)
D[Cont.]
, dlS/dt = 100A/µs)
D[Cont.]
D[Cont.]
)
= 0V
GS
= 10V
DSS
@ 25°C
DSS
@ 25°C
MIN TYP MAX
3050 3660
280 390
135 200
150 225
16 24
70 105
12 24
11 22
55 85
12 24
MIN TYP MAX
9
36
1.3
700
9
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
050-5812 Rev A
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Junction to Case
Junction to Ambient
θJA
0.7
0.5
0.1
0.05
0.01
0.005
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.001
-5
10
3
See MIL-STD-750 Method 3471
4
Starting T
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-4
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
+25°C, L = 29.88mH, R
j
=
-1
10
MIN TYP MAX
0.62
40
25Ω, Peak IL = 9A
G
=
1.0 10
UNIT
°C/W
APT1001R1HVR
20
16
VGS=6V, 10V & 15V
20
VGS=15V
16
VGS=6V & 10V
5V
12
12
4.5V
8
4
, DRAIN CURRENT (AMPERES)
D
0
0 100 200 300 400 500 0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
4V
3.5V
8
4
, DRAIN CURRENT (AMPERES)
D
0
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
40
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
30
TJ = -55°C
TJ = +125°C
1.5
1.4
NORMALIZED TO
V
= 10V @ 0.5 ID [Cont.]
GS
VGS=10V
20
1.2
VGS=20V
TJ = +125°C
10
, DRAIN CURRENT (AMPERES) I
D
TJ = -55°C
TJ = +25°C
0
02468 051015202530
V
, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
GS
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
10
1.0
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.8
DS
1.15
4.5V
4V
3.5V
, DRAIN-TO-SOURCE BREAKDOWN R
1.10
1.05
1.00
0.95
DSS
0.90
1.2
1.1
8
6
4
2
, DRAIN CURRENT (AMPERES) I
D
0
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T
, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
C
2.5
ID = 0.5 ID [Cont.]
VGS = 10V
2.0
1.0
1.5
0.9
1.0
(NORMALIZED)
0.5
(ON), DRAIN-TO-SOURCE ON RESISTANCE I
0.0
DS
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
R
T
, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
J
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.8
(NORMALIZED) VOLTAGE (NORMALIZED)
(TH), THRESHOLD VOLTAGE BV
0.7
GS
V
0.6
050-5812 Rev A
40
OPERATION HERE
LIMITED BY RDS (ON)
10
5
1
.5
TC =+25°C
, DRAIN CURRENT (AMPERES)
D
TJ =+150°C
SINGLE PULSE
.1
1 5 10 50 100 5001000 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
ID = ID [Cont.]
16
12
VDS=100V
VDS=200V
VDS=500V
10µS
100µS
1mS
10mS
100mS
DC
11,000
5,000
1,000
500
100
C
iss
C
oss
C
rss
50
50
T
=+150°C T
10
5
J
=+25°C
J
APT1001R1HVR
8
4
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
GS
V
0
0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1.0 1.2
Q
, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
g
1
.5
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
DR
.1
I
TO-258 Package Outline
17.65 (.695)
17.39 (.685)
8.89 (.350)
8.63 (.340)
4.19 (.165)
3.94 (.155)
21.21 (.835)
20.70 (.815)
1.14 (.045)
0.88 (.035)
13.84 (.545)
13.58 (.535)
17.96 (.707)
17.70 (.697)
19.05 (0.750)
12.70 (0.500)
3.56 (.140) BSC
6.86 (.270)
6.09 (.240)
1.65 (.065)
1.39 (.055)
Dia. Typ.
3 Leads
5.08 (.200) BSC
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
050-5812 Rev A
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
Drain
Source
Gate
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