ADVANCED POWER TECHNOLOGY 2N7228 Service Manual

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d

查询2N7228供应商

D

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TO-254

S

2N7228 500 Volt 0.415Ω
JX2N7228*

POWER MOS IV

TM

JEDEC REGISTERED N - CHAN N E L HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

V

I

I

DM

I

AR

P

E
E

TJ,T

T

Parameter

Drain-Source Voltage
Gate-Source Voltage

GS

Continuous Drain Current @ TC = 25°C

D

Continuous Drain Current @ TC = 100°C
Pulsed Drain Current
Avalanche Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 100°C

D

Linear Derating Factor
Single Pulse Avalanche Energy

AS

Repetitive Avalanche Energy

AR

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.

L

1

1

JV2N7228*

*QUALIFIED TO MIL-S-19500/592 31/7/92

2N7228

500
±20

12

8
48
12

150

60

1.2

750

15

-55 to 150
300

UNIT

Volts

Amps

Watts

W/K

mJ

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

VGS(TH)

I

DSS

I

GSS

ID(ON)

RDS(ON)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

Gate Threshold Voltage (VDS = VGS, ID = 250µA)
Zero Gate Voltage Drain Current (VDS = 0.8 V

Zero Gate Voltage Drain Current (VDS = 0.8 V
Gate-Source Leakage Current (V
On State Drain Current 2 (V
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 8.0A)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 8.0A, TC = 125°C)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 12.0A)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

valanche RatedAvalanche Rate

= ±20V, V

GS

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

500

24

25

250

±100

12

0.415

0.900

0.515

UNIT

Volts

µA

nA

Amps

Ohms

051-5015 Rev D

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

2N7228

Symbol

C

DC

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

f = 1 MHz

V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

VGS = 10V

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 2.35Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

SD

Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)

rr

Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)

rr

(Body Diode)

GS

= 0V

DSS

DSS

MIN TYP MAX

12 24

2410 2900

356 530
125 235
103 150

14 21
42 70
14 35
21 190
38 170
12 130

MIN TYP MAX

12
48

1.7

296 1600

3.5 8.8

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

051-5015 Rev D

THERMAL CHARACTERISTICS

Symbol

R

R

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

1.0

0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

D=0.5

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

MIN TYP MAX

1.0 10

0.83
31

UNIT

K/W

3

2N7228

20

16

VGS=6V, 6.5V & 10V

5.5V

20

16

VGS=10V

VGS=6.5V

VGS=6V

5.5V

12

12

5V

8

4

D

I , DRAIN CURRENT (AMPERES)

0

0 50 100 150 200 250

V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

20

VDS> ID (ON) x RDS (ON)MAX.

16

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

TJ = -55°C

12

4.5V

4V

TJ = +125°C

8

4

D

I , DRAIN CURRENT (AMPERES)

0

0246810

3.0

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

2.5

2.0

VGS=10V

8

1.5

(NORMALIZED)

4

D

I , DRAIN CURRENT (AMPERES)

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

TJ = +125°C

TJ = +25°C

02468

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

16

1.0

0.5

DS

R (ON), DRAIN-TO-SOURCE ON RESISTANCE

1.2

0 10 20 30 40 50

(ON) vs DRAIN CURRENT

DS

VGS=20V

5V

4.5V

4V

12

1.1

1.0

8

0.9

4

D

I , DRAIN CURRENT (AMPERES)

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

1.5

1.0

(NORMALIZED)

0.5

0.8

VOLTAGE (NORMALIZED)

DSS

0.7

BV , DRAIN-TO-SOURCE BREAKDOWN

-50 -25 0 25 50 75 100 125 150

1.4

1.2

1.0

0.8

(NORMALIZED)

0.6

0.0

DS

-50 -25 0 25 50 75 100 125 150

R (ON), DRAIN-TO-SOURCE ON RESISTANCE

TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

GS

0.4

V (TH), THRESHOLD VOLTAGE (VOLTS)

-50 -25 0 25 50 75 100 125 150

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

051-5015 Rev D

50

OPERATION HERE

LIMITED BY RDS (ON)

10

5

1

0.5
TC =+25°C

D

I , DRAIN CURRENT (AMPERES)

TJ =+150°C
SINGLE PULSE

0.1

1 5 10 50 100 500

V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

VDS=100V

VDS=250V

VDS=400V

100µS

1mS

10mS

100mS

DC

7,000
5,000

1,000

500

C, CAPACITANCE (pF)

100

70

0.1 0.5 1 5 10 50

100

50

20

TJ = +150°C

10

5

TJ = +25°C

C

iss

C

oss

C

rss

2N7228

4

0

GS

0 50 100 150 200 250

V , GATE-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

g

2

1

DR

I , REVERSE DRAIN CURRENT (AMPERES)

0 .5 1.0 1.5 2.0

TO-254AA Package Outline

13.84 (.545)

20.32 (.800)

20.07 (.790)

1.27 (.050)

1.02 (.040)

13.84 (.545)

13.59 (.535)

17.40 (.685)

16.89 (.665)

31.37 (1.235)

30.35 (1.195)

13.59 (.535)

6.91 (.272)

6.81 (.268)

3.78 (.149)

3.53 (.139)

Drain

Source

Gate

Dia.

051-5015 Rev D

3.81 (.150) BSC

6.60 (.260)

6.32 (.249)

Dimensions in Millimeters and (Inches)

1.14 (.045)
.89 (.035)

3.81 (.150) BSC

Dia. Typ.

3 Leads