ADVANCED POWER TECHNOLOGY 2N7227 Service Manual

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查询2N7227供应商

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TO-254

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2N7227 400 Volt 0.315Ω
JX2N7227*

POWER MOS IV

TM

JEDEC REGISTERED N - CHAN N E L HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

V

I

I

DM

I

AR

P

E
E

TJ,T

T

Parameter

Drain-Source Voltage
Gate-Source Voltage

GS

Continuous Drain Current @ T

D

Continuous Drain Current @ TC = 100°C
Pulsed Drain Current
Avalanche Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 100°C

D

Linear Derating Factor
Single Pulse Avalanche Energy

AS

Repetitive Avalanche Energy

AR

Operating and Storage Junction Temperature Range

STG

Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.

L

1

1

= 25°C

C

JV2N7227*

*QUALIFIED TO MIL-S-19500/592 31/7/92

2N7227

400
±20

14

9
56
14

150

60

1.2

700

15

-55 to 150
300

UNIT

Volts

Amps

Watts

W/K

mJ

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

VGS(TH)

I

DSS

I

GSS

ID(ON)

RDS(ON)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

Gate Threshold Voltage (VDS = VGS, ID = 250µA)
Zero Gate Voltage Drain Current (VDS = 0.8 V

Zero Gate Voltage Drain Current (VDS = 0.8 V
Gate-Source Leakage Current (VGS = ±20V, V
On State Drain Current 2 (V
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 9.0A)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 9.0A, TC = 125°C)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 14.0A)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

valanche RatedAvalanche Rate

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

400

24

14

25

250

±100

0.315

0.680

0.415

UNIT

Volts

µA

nA

Amps

Ohms

051-4015 Rev D

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

2N7227

Symbol

C

DC

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

f = 1 MHz

V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

VGS = 10V

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 2.35Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

SD

Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)

rr

Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)

rr

(Body Diode)

GS

= 0V

DSS

DSS

MIN TYP MAX

12 24

2400 2800

385 540
160 240
100 150

12 24
41 65
12 35
18 190
40 170
13 130

MIN TYP MAX

14
56

1.7

279 1200

3.6 9.0

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

051-4015 Rev D

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

Characteristic

Junction to Case
Junction to Ambient

1.0

0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

D=0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

MIN TYP MAX

1.0 10

0.83
31

UNIT

K/W

3