Advanced Power Technology 2729 – 170 – 01 Service Manual
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2729-170R2
2729-170
170 Watts, 38 Volts, 100µs, 10%
Radar 2700-2900 MHz
GENERAL DESCRIPTION
The 2729-170 is an internally matched, COMMON BASE bipolar transistor
capable of providing 170 Watts of pulsed RF output power at 100µs pulse
width, 10% duty factor across the 2700 to 2900 MHz band. The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull. This hermetically solder -sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25 °C1 570 W
Maximum Voltage and Current
Collector to Base Voltage (BV
Emitter to Base Voltage (BV
Collector Current (Ic) 17 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C
) 65 V
ces
) 3.0 V
ebo
CASE OUTLINE
55KS-1
Common Base
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
Power Output
Pin Power Input
P
g
η
c
Power Gain
Collector Efficiency Duty Factor = 10% 52 60 %
VSWR Load Mismatch Tolerance
1
F=2700-2900 MHz 170 W
Vcc = 38 Volts 25.7 W
Pulse Width = 100 µs 8.2 8.6 dB
F = 2900 MHz, Po = 170 W 2:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
Emitter to Base Breakdown Ie = 30 mA 3.0 V
Iebo Emitter to Base Leakage Veb = 1.5 V 2 mA
BV
ces
Collector to Emitter Breakdown Ic = 120 mA 56 65 V
Ices Collector to Emitter Leakage Vce = 36 V 7 mA
h
FE
1
θjc
NOTE: 1. At rated output power and pulse conditions
Issue April 2005
DC – Current Gain Vce = 5V, Ic = 600 mA 18 50
Thermal Resistance 0.30
°C/W
APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK
OUR WEB SITE AT WWW.ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECTLY.
2729-170R2
Efficiency (%)
2729-170
Vcc = 38 Volts, Pulse Width = 100 µs, Duty = 10 %
G2754-2,
Product is in characterization, additional curves will be inserted at the conclusion.
Pout vs. Pin
200.0
180.0
160.0
140.0
120.0
100.0
Pout (W)
80.0
60.0
40.0
20.0
0.0
0.0 10.0 20.0 30.0
Pin (W)
2.7GHz
2.8GHz
2.9GHz
Efficiency vs Power Out
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
0.0 50.0 100.0 150.0 200.0
Power Output (W)
Power Gain vs Power Out
9
8
7
2.7GHz
2.8GHz
2.9GHz
6
5
4
Gain (dB)
3
2
1
0
0.0 50.0 100.0 150.0 200.0
Pout (W)
2.7GHz
2.8GHz
2.9GHz
Input and Load Impedance
Input Impedance vs Frequency
15
10
5
0
Zin = Rin + jXin
2.7 2.75 2.8 2.85 2.9
-5
Rin
jXin
-2
-4
Zload = Rl + jXl
-6
Frequency - GHz
Note: Zin is looking into the transistor input, Zl is looking into the Output Circuit.
Load Impedance vs Frequency
4
2
0
2.7 2.75 2.8 2.85 2.9
Frequency - GHz
Rl
jXl
APT-RF RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK
OUR WEB SITE AT WWW.ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECTLY.
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