AP4232GM-HF
Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-Resistance
▼ Simple Drive Requirement R
D1
D1
D2
D2
▼ Dual N MOSFET Package I
▼ RoHS Compliant
SO-8
G2
S2
G1
S1
BV
DS(ON)
D
DSS
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D1
G2
S1
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
=25℃ A
I
D@TA
=70℃ A
I
D@TA
I
DM
P
=25℃ W
D@TA
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
3
3
Linear Derating Factor
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range
RatingParameter
30
20
+
7.8
6.2
30
2
0.016
-55 to 150
-55 to 150
30V
22mΩ
7.8A
D2
S2
V
V
A
W/℃
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Parameter
3
62.5 ℃/W
1
200901203
AP4232GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
DSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
Static Drain-Source On-Resistance2VGS=10V, ID=7A - - 22 mΩ
=4.5V, ID=5A - - 32 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
Forward Transconductance VDS=10V, ID=7A - 12 - S
Drain-Source Leakage Current
V
=30V, VGS=0V - - 10
DS
Gate-Source Leakage VGS=+20V, VDS=0V - - +100
Total Gate Charge
2
ID=7A - 13 21
Gate-Source Charge VDS=24V - 3 -
Gate-Drain ("Miller") Charge VGS=4.5V - 9 -
Turn-on Delay Time
2
VDS=15V - 10 -
Rise Time ID=1A - 7 -
Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 -
Fall Time RD=15Ω -8-
Input Capacitance VGS=0V - 720 1150
Output Capacitance VDS=25V - 230 -
Reverse Transfer Capacitance f=1.0MHz - 200 -
Gate Resistance f=1.0MHz - 1.2 1.8
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge dI/dt=100A/µs - 8 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
2
IS=1.7A, VGS=0V - - 1.2 V
IS=7A, VGS=0V, - 16 - ns
2
A
P4232GM-HF
g
f
I
40
V
=3.0V
G
10V
7.0V
5.0V
4.5V
TA=25oC
30
20
, Drain Current (A)
D
I
10
0
012345
VDS , Drain-to-Source Voltage (V)
40
TA=150oC
10V
7.0V
30
5.0V
4.5V
20
, Drain Current (A)
D
I
10
0
012345
V
=3.0V
G
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
)
Ω
(m
DS(ON)
R
30
=5A
D
T
=25
℃
A
25
20
1.6
DS(ON)
1.3
Normalized R
1.0
ID=7A
V
=10V
G
15
246810
VGS , Gate-to-Source Voltage (V)
0.7
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
6
(A)
S
I
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
Fi
Tj=25oCTj=150oC
VSD , Source-to-Drain Voltage (V)
5. Forward Characteristic o
2.0
1.5
(V)
GS(th)
1.0
Normalized V
0.5
0.0
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP4232GM-HF
f
z
16
I
=7A
D
12
8
4
, Gate to Source Voltage ( V)
GS
V
0
0 5 10 15 20 25 30
VDS=15V
V
V
DS
=20V
DS
=24V
QG , Total Gate Charge (nC)
1000
C (pF)
100
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
=1.0MH
C
iss
C
C
rss
oss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100
10
(A)
1
D
I
0.1
TA=25oC
Single Pulse
0.01
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
DC
1
)
thja
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
P
DM
Duty factor = t/T
Peak T
R
= 135℃/W
thja
t
T
= PDM x R
j
Normalized Thermal Response (R
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
+ T
thja
a
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
30
V
4.5V
G
Q
G
Q
GS
Q
GD
Charge
Q
V
=5V
DS
20
, Drain Current (A)
10
D
I
0
0246
Tj=150oCTj=25oC
VGS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
4232G
Package Outline : SO-8
D
5678
1
2
e
34
B
A
E1
Millimeters
SYMBOLS
A 1.35 1.55 1.75
A1 0.10 0.18 0.25
E
B 0.33 0.41 0.51
c 0.19 0.22 0.25
D 4.80 4.90 5.00
E 5.80 6.15 6.50
E1 3.80 3.90 4.00
e
G
L 0.38 － 0.90
α 0.00 4.00 8.00
MIN NOM MAX
1.27 TYP
0.254 TYP
A1
G
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
Part Number
meet Rohs requirement
M
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
Package Code
5
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