AP4232BGM-HF
Halogen-Free Product
Advanced Power DUAL N-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement R
▼ Fast Switching Characteristic I
BV
DS(ON)
D
DSS
▼ Halogen Free & RoHS Compliant Product
D2
D2
D1
Description
D1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
SO-8
cost-effectiveness.
D1
G1
G2
S1
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
=25℃ A
I
D@TA
=70℃ A
I
D@TA
I
DM
P
T
T
=25℃ W
D@TA
STG
J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Parameter
3
3
1
Rating
30
+20
7.6
6
30
2
-55 to 150
-55 to 150
G1
S1
30V
22mΩ
7.6A
G2
S2
D2
S2
V
V
A
℃
℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Parameter
3
62.5 ℃/W
1
200908031
AP4232BGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
DSS
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
Static Drain-Source On-Resistance2VGS=10V, ID=7A - - 22 mΩ
=4.5V, ID=5A - - 32 mΩ
V
GS
Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
Forward Transconductance VDS=10V, ID=7A - 15 - S
Drain-Source Leakage Current
V
=30V, VGS=0V - - 1
DS
Gate-Source Leakage VGS=+20V, VDS=0V - - +100
Total Gate Charge
2
ID=7A - 6 9.6
Gate-Source Charge VDS=15V - 1.3 -
Gate-Drain ("Miller") Charge VGS=4.5V - 3.4 -
Turn-on Delay Time
2
VDS=15V - 6 -
Rise Time ID=1A - 7.5 -
Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 -
Fall Time RD=15Ω -4-
Input Capacitance VGS=0V - 370 600
Output Capacitance VDS=25V - 90 -
Reverse Transfer Capacitance f=1.0MHz - 75 -
Gate Resistance f=1.0MHz - 1.6 3.2
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
V
SD
t
rr
Q
rr
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge dI/dt=100A/µs - 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
2
2
IS=1.7A, VGS=0V - - 1.2 V
IS=7A, VGS=0V, - 17.5 - ns
2
A
P4232BGM-HF
g
f
I
40
V
=4.0V
G
10V
7.0V
6.0V
5.0V
TA=25oC
30
20
, Drain Current (A)
D
I
10
0
01234
VDS , Drain-to-Source Voltage (V)
40
TA=150oC
10V
7.0V
6.0V
30
20
, Drain Current (A)
D
I
10
0
012345
V
=4.0V
G
5.0V
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
)
Ω
(m
DS(ON)
R
30
=5A
D
T
=25
℃
26
22
18
A
DS(ON)
Normalized R
2.0
1.6
1.2
ID=7A
V
=10V
G
14
10
246810
VGS , Gate-to-Source Voltage (V)
0.8
0.4
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
6
(A)
S
I
4
Tj=25oCTj=150oC
2
0
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
1.4
1.2
(V)
1.0
GS(th)
0.8
Normalized V
0.6
0.4
-50 0 50 100 150
Tj , Junction Temperature (oC)
Fi
5. Forward Characteristic o
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP4232BGM-HF
f
z
10
8
I
=7A
D
6
4
, Gate to Source Voltage ( V)
GS
2
V
0
024681012
VDS=15V
QG , Total Gate Charge (nC)
600
500
400
C (pF)
300
200
100
0
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
=1.0MH
C
C
oss
C
iss
rss
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
100
Operation in this
area limited by
10
R
DS(ON)
(A)
D
1
I
0.1
TA=25oC
Single Pulse
0.01
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
DC
1
)
thja
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Normalized Thermal Response (R
Single Pulse
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
P
DM
Duty factor = t/T
Peak T
R
= 135℃/W
thja
t
T
= PDM x R
j
+ T
thja
t , Pulse Width (s)
a
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
V
DS
V
G
90%
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)tr
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
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