Advanced Linear Devices Inc ALD1116SB, ALD1116SA, ALD1116PB, ALD1116PA, ALD1116DB Datasheet
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GENERAL DESCRIPTION
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range
of precision analog applications. The ALD1106/ALD1116 offer high input
impedance and negative current temperature coefficient. The transistor
pairs are matched for minimum offset voltage and differential thermal
response, and they are designed for switching and amplifying applications
in +2V to +12V systems where low input bias current, low input capacitance
and fast switching speed are desired. These MOSFET devices feature very
large (almost infinite) current gain in a low frequency, or near DC, operating
environment. The ALD1106/ALD1116 are building blocks for differential
amplifier input stages, transmission gates, and multiplexer applications,
current sources and many precision analog circuits.
ADVANCED
LINEAR
DEVICES, INC.
QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY
ALD1106/ALD1116
APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog signal processing
BLOCK DIAGRAM
FEATURES
• Low threshold voltage of 0.7V
• Low input capacitance
• Low Vos 2mV typical
• High input impedance -- 10
14
Ω typical
• Negative current (I
DS
) temperature coefficient
• Enhancement-mode (normally off)
• DC current gain 10
9
• Low input and output leakage currents
PIN CONFIGURATION
D
N2
G
N2
S
N2
G
N1
S
N1
1
2
3
4
DA, PA, SA PACKAGE
5
6
7
8
D
N1
V
+
V
-
ALD1116
D
N1
(1)
D
N2
(8)
~
G
N1
(2)
S
N1
(3) S
N2
(6)
V+ (5)
V- (4)
G
N2
(7)
ALD1116
Operating Temperature Range*
-55°C to +125°C0°C to +70°C0°C to +70°C
8-Pin CERDIP 8-Pin Plastic Dip 8-Pin SOIC
Package Package Package
ALD1116 DA ALD1116 PA ALD1116 SA
14-Pin CERDIP 14-Pin Plastic Dip 14-Pin SOIC
Package Package Package
ALD1106 DB ALD1106 PB ALD1106 SB
ORDERING INFORMATION
* Contact factory for industrial temperature range.
BLOCK DIAGRAM
D
N1
(1)
D
N2
(14)
G
N1
(2)
S
N1
(3) S
N2
(12)
V- (4)
G
N2
(13)
D
N3
(10)
D
N4
(5)
G
N3
(9)
S
N3
(8) S
N4
(7)
~
V+ (11)
V- (4)
G
N4
(6)
ALD1106
D
N2
G
N2
S
N2
G
N3
S
N3
G
N1
S
N1
D
N4
G
N4
1
2
3
4
DB, PB, SB PACKAGE
5
6
7
8
9
10
11
12
13
14
D
N1
V
+
V
-
D
N3
S
N4
1
ALD1106
© 1998 Advanced Linear Devices, Inc. 415 T asman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www .aldinc.com
ALD1106/ALD1116 Advanced Linear Devices 2
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
DS
13.2V
Gate-source voltage, V
GS
13.2V
Power dissipation 500 mW
Operating temperature range PA, SA, PB, SB package 0°C to +70°C
DA, DB package -55°C to +125°C
Storage temperature range -65°C to +150°C
Lead temperature, 10 seconds +260°C
Gate Threshold V
T
0.4 0.7 1.0 0.4 0.7 1.0 V IDS = 1.0µA VGS = V
DS
Voltage
Offset Voltage V
OS
2 10 2 10 mV IDS = 10µA VGS = V
DS
V
GS1-VGS2
Gate Threshold
Temperature TC
VT
-1.2 -1.2 mV/°C
Drift
2
On Drain I
DS (ON)
3.0 4.8 3.0 4.8 mA VGS = V
DS
= 5V
Current
Transconductance G
IS
1.0 1.8 1.0 1.8 mmho VDS = 5V IDS= 10mA
Mismatch ∆G
fs
0.5 0.5 %
Output G
OS
200 200 µmho VDS = 5V I
DS
= 10mA
Conductance
Drain Source R
DS (ON)
350 500 350 500 Ω VDS = 0.1V V
GS
= 5V
On Resistance
Drain Source
On Resistence ∆
DS (ON)
0.5 0.5 % VDS = 0.1V V
GS
= 5V
Mismatch
Drain Source
Breakdown BV
DSS
12 12 V IDS = 1.0µA V
GS
= 0V
Voltage
Off Drain I
DS (OFF)
10 400 10 400 pA VDS =12V V
GS
= 0V
Current
1
44nAT
A
= 125°C
Gate Leakage I
GSS
0.1 10 0.1 10 pA VDS = 0V V
GS
= 12V
Current 1 1 nA T
A
= 125°C
Input C
ISS
13 13pF
Capacitance
2
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25°C unless otherwise specified
ALD1106 ALD1116 Test
Parameter Symbol Min Typ Max Min Typ Max Unit Conditions
Notes:
1
Consists of junction leakage currents
2
Sample tested parameters
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