Advanced Linear Devices Inc ALD1102SA, ALD1102BPA, ALD1102APA Datasheet

ADVANCED
LINEAR
DEVICES, INC.

ALD1102A/ALD1102B

ALD1102

DUAL P-CHANNEL MATCHED MOSFET PAIR

© 1998 Advanced Linear Devices, Inc. 415 T asman Drive, Sunnyvale, California 94089 -1706 Tel: [phone] Fax: [phone] http://www .aldinc.com

GENERAL DESCRIPTION

The ALD1102 is a monolithic dual P-channel matched transistor pair
intended for a broad range of analog applications. These enhancement­mode transistors are manufactured with Advanced Linear Devices' en­hanced ACMOS silicon gate CMOS process.

The ALD1102 offers high input impedance and negative current tempera­ture coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. Since
these are MOSFET devices, they feature very large (almost infinite) current
gain in a low frequency, or near DC operating environment. When used
with an ALD1101, a dual CMOS analog switch can be constructed. In
addition, the ALD1102 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.

The ALD1102 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.

FEATURES

• Low threshold voltage of 0.7V

• Low input capacitance

• Low Vos grades -- 2mV, 5mV, 10mV

• High input impedance -- 10

12

Ω typical

• Low input and output leakage currents

• Negative current (I

• Enhancement-mode (normally off)

• DC current gain 10

) temperature coefficient

DS

9

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Analog switches

• Choppers

• Differential amplifier
input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog inverter

PIN CONFIGURATION

NC

1

1

2

1

3

1

4

DA, PA, SA PACKAGE

TOP VIEW

SOURCE

GATE

DRAIN

BLOCK DIAGRAM

SUBSTRATE

8

SOURCE

7

6

GATE

DRAIN

5

2

2

2

ORDERING INFORMATION

GATE 1 (2)

Operating Temperature Range*

-55°C to +125°C0°C to +70°C0°C to +70°C
8-Pin 8-Pin 8-Pin

CERDIP Plastic Dip SOIC

DRAIN 1 (3)

DRAIN 2 (5)

SOURCE 1 (1)
SUBSTRATE (8)

SOURCE 2 (7)

Package Package Package

ALD1102A PA

GATE 2 (6)

ALD1102B PA

ALD1102 DA ALD1102 PA ALD1102 SA

* Contact factory for industrial temperature range.

© 1998 Advanced Linear Devices, Inc. 415 T asman Drive, Sunnyvale, California 94089 -1706 Tel: [phone] Fax: [phone] http://www .aldinc.com

ABSOLUTE MAXIMUM RATINGS

Drain-source voltage, V
Gate-source voltage, V

DS

GS

Power dissipation 500 mW
Operating temperature range PA, SA package 0°C to +70°C

DA package -55°C to +125°C
Storage temperature range -65°C to +150°C
Lead temperature, 10 seconds +260°C

-13.2V

-13.2V

OPERATING ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise specified

T

A

1102A 1102B 1102 Test
Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Unit Conditions

Gate Threshold
Voltage V

Offset Voltage V
V

- V

GS1

GS2

Gate Threshold TC
Temperature Drift

T

OS

-0.4 -0.7 -1.2 -0.4 -0.7 -1.2 -0.4 -0.7 -1.2 V IDS = -10µA VGS = V
2 5 10 mV IDS = -100µA VGS = V

VT

-1.3 -1.3 -1.3 mV/°C

DS

DS

On Drain Current I

Transconductance G

Mismatch ∆G
Output G

Conductance
Drain Source R

ON Resistance

DS (ON)

fs

fs

OS

DS(ON)

-8 -16 -8 -16 -8 -16 mA VGS = V
2 4 2 4 2 4 mmho VDS = -5V IDS= -10mA

0.5 0.5 0.5 %

500 500 500 µmho VDS = -5V I

180 270 180 270 180 270 Ω VDS = -0.1V V

Drain Source
ON Resistance ∆R
Mismatch

DS(ON)

0.5 0.5 0.5 % VDS = -0.1V V

Drain Source
Breakdown BV
Voltage

Off Drain Current I

Gate Leakage I
Current 10 10 10 nA T

Input C
Capacitance

DSS

DS(OFF)

GSS

ISS

-12 -12 -12 V IDS = -10µA V

0.1 4 0.1 4 0.1 4 nA VDS =-12V V
444µAT

150 150 150pA VDS =0V V

6 10 6 10 6 10 pF

= 125°C

A

= 125°C

A

DS

= -5V

DS

GS

GS

GS

= -10mA

= -5V

GS

= -5V

GS

=0V

= 0V

=-12V

ALD1102A/ALD1102B Advanced Linear Devices 2
ALD1102