Advanced Linear Devices Inc ALD1101SA, ALD1101PA, ALD1101DA, ALD1101BPA, ALD1101APA Datasheet

ADVANCED
LINEAR
DEVICES, INC.

ALD1101A/ALD1101B

ALD1101

DUAL N-CHANNEL MATCHED MOSFET PAIR

© 1998 Advanced Linear Devices, Inc. 415 T asman Drive, Sunnyvale, California 94089 -1706 Tel: [phone] Fax: [phone] http://www .aldinc.com© 1998 Advanced Linear Devices, Inc. 415 T asman Drive, Sunnyvale, California 94089 -1706 Tel: [phone] Fax: [phone] http://www .aldinc.com© 1998 Advanced Linear Devices, Inc. 415 T asman Drive, Sunnyvale, California 94089 -1706 Tel: [phone] Fax: [phone] http://www .aldinc.com

GENERAL DESCRIPTION

The ALD1101 is a monolithic dual N-channel matched transistor pair
intended for a broad range of analog applications. These enhancement-

mode transistors are manufactured with Advanced Linear Devices' en­hanced ACMOS silicon gate CMOS process.

The ALD1101 offers high input impedance and negative current tempera­ture coefficient. The transistor pair is matched for minimum offset voltage
and differential thermal response, and it is designed for switching and
amplifying applications in +2V to +12V systems where low input bias
current, low input capacitance and fast switching speed are desired. Since
these are MOSFET devices, they feature very large (almost infinite)
current gain in a low frequency, or near DC, operating environment. When
used with an ALD1102, a dual CMOS analog switch can be constructed.
In addition, the ALD1101 is intended as a building block for differential
amplifier input stages, transmission gates, and multiplexer applications.

The ALD1101 is suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 50pA at room temperature. For example, DC beta of the device
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.

FEATURES

• Low threshold voltage of 0.7V

• Low input capacitance

• Low Vos grades -- 2mV, 5mV, 10mV

• High input impedance -- 10

• Negative current (I

DS

12

Ω typical

) temperature

coefficient

• Enhancement-mode (normally off)

• DC current gain 10

9

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Analog switches

• Choppers

• Differential amplifier
input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog inverter

PIN CONFIGURATION

NC

1

1

2

1

3

1

4

DA, PA, SA PACKAGE

TOP VIEW

SOURCE

GATE

DRAIN

BLOCK DIAGRAM

SUBSTRATE

8

SOURCE

7

6

GATE

DRAIN

5

2

2

2

ORDERING INFORMATION

Operating Temperature Range*

-55°C to +125°C0°C to +70°C0°C to +70°C
8-Pin 8-Pin 8-Pin

CERDIP Plastic Dip SOIC

DRAIN 1 (3)

DRAIN 2 (5)

GATE 1 (2)

SOURCE 1 (1)
SUBSTRATE (8)

SOURCE 2 (7)

Package Package Package

ALD1101A PA
ALD1101B PA

GATE 2 (6)

ALD1101 DA ALD1101 PA ALD1101 SA

* Contact factory for industrial temperature range.

© 1998 Advanced Linear Devices, Inc. 415 T asman Drive, Sunnyvale, California 94089 -1706 Tel: [phone] Fax: [phone] http://www .aldinc.com

ABSOLUTE MAXIMUM RATINGS

Drain-source voltage, V
Gate-source voltage, V

DS

GS

Power dissipation 500 mW
Operating temperature range PA, SA package 0°C to +70°C

DA package -55°C to +125°C
Storage temperature range -65°C to +150°C
Lead temperature, 10 seconds +260°C

13.2V

13.2V

OPERATING ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise specified

T

A

ALD 1101A ALD1101B ALD1101 Test

Parameter Symbol Min Typ Max Min Typ Max Min Typ Max Unit Conditions

Gate Threshold
Voltage V

Offset Voltage V
V

- V

GS1

GS2

Gate Threshold TC
Temperature Drift

T

OS

VT

0.4 0.7 1.0 0.4 0.7 1.0 0.4 0.7 1.0 V IDS = 10µA VGS = V
2 5 10 mV IDS = 100µA VGS = V

-1.2 -1.2 -1.2 mV/°C

DS

DS

On Drain Current I

Transconductance G

Mismatch ∆G
Output G

Conductance
Drain Source R

ON Resistance

DS (ON)

fs

fs

OS

DS(ON)

25 40 25 40 25 40 mA VGS = V

5 10 5 10 5 10 mmho VDS = 5V IDS= 10mA

0.5 0.5 0.5 %

200 200 200 µmho VDS = 5V I

50 75 50 75 50 75 Ω VDS = 0.1V V

Drain Source
ON Resistance ∆R
Mismatch

DS(ON)

0.5 0.5 0.5 % VDS = 0.1V V

Drain Source
Breakdown BV
Voltage

Off Drain Current I

Gate Leakage I
Current 10 10 10 nA T

Input C
Capacitance

DSS

DS(OFF)

GSS

ISS

12 12 12 V IDS = 10µA V

0.1 4 0.1 4 0.1 4 nA VDS =12V V
444µAT

150 150 1 50pA VDS =0V V

6 10 6 10 6 10 pF

= 125°C

A

= 125°C

A

DS

= 5V

DS

GS

GS

GS

= 10mA

= 5V

GS

= 5V

GS

=0V

= 0V

=12V

ALD1101A/ALD1101B Advanced Linear Devices 2
ALD1101