APTGS25X120RTP2
Input rectifier bridge +
Brake + 3 Phase Bridge
APTGS25X120RTP2: Without Brake (Pin 7 & 14 not connected)
14
21
22
23
24
1 2 3 4 5 6
All ratings @ Tj = 25°C unless otherwise specified
101118 16
1315171920
12
9
8
7
Application
• AC Motor control
Features
• Non Punch Through (NPT) Low Loss IGBT®
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Low conduction losses
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
1. Absolute maximum ratings
Diode rectifier
Symbol Parameter Max ratings Unit
V
Repetitive Peak Reverse Voltage 1600
RRM
ID DC Forward Current
I
Surge Forward Current tp = 10ms
FSM
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
= 1200V
CES
IC = 25A @ Tc = 80°C
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
TC = 80°C
Tj = 25°C
Tj = 150°C
25
300
230
V
A
APT website – http://www.advancedpower.com
APTGS25X120BTP2 – Rev 0 July, 2003
APTGS25X120RTP2
IGBT & Diode Brake
Symbol Parameter Max ratings Unit
V
Collector - Emitter Breakdown Voltage 1200
CES
IC Continuous Collector Current
ICM Pulsed Collector Current TC = 25°C 25
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation
IF DC Forward Current
IGBT & Diode Inverter
Symbol Parameter Max ratings Unit
V
Collector - Emitter Breakdown Voltage 1200
CES
IC Continuous Collector Current
ICM Pulsed Collector Current TC = 25°C 50
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation
SCSOA Short circuit Safe Operating Area
IF DC Forward Current
I
Surge Forward Current tp = 1ms
FSM
2. Electrical Characteristics
Diodes Rectifier
Symbol Characteristic Test Conditions Min Typ Max Unit
IR Reverse Current VR = 1600V Tj = 150°C
VF Forward Voltage
R
Junction to Case 1
thJC
IGBT Brake & Diode
Symbol Characteristic Test Conditions Min Typ Max Unit
I
Zero Gate Voltage Collector Current
CES
V
Collector Emitter on Voltage
CE(on)
V
Gate Threshold Voltage VGE = V
GE(th)
I
Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 300 nA
GES
C
Input Capacitance
ies
VF Forward Voltage
R
Junction to Case
thJC
(only for APTGS25X120BTP2)
Absolute maximum ratings
Electrical Characteristics
(only for APTGS25X120BTP2)
Absolute maximum ratings
TC = 25°C
TC = 80°C 12.5
TC = 25°C
TC = 80°C
TC = 25°C
TC = 80°C 25
TC = 25°C
Tj = 125°C
TC = 80°C
TC = 80°C
IF = 30A
IF = 25A
Electrical Characteristics
VGE = 0V
VCE = 1200V
VGE =15V
IC = 12.5A
CE
VGE = 0V, VCE = 25V
f = 1MHz
VGE = 0V
IF = 25A
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
, IC = 0.35 mA 4.5 5.5 6.5 V
Tj = 25°C 2.05 2.4
Tj = 125°C
20
100 W
25 A
45
230 W
160A @ 720V
25
50
2 mA
1.3 1.5
1.05 1.1
0.5 500 µA
0.8 mA
2.7 3.15
3.1
600 pF
1.9
IGBT 1.2
Diode 1.2
V
A
V
A
A
V
°C/W
V
V
°C/W
APT website – http://www.advancedpower.com
APTGS25X120BTP2 – Rev 0 July, 2003