ADVANCED APTGS25X120RTP2, APTGS25X120BTP2 Service Manual

APTGS25X120RTP2
APTG
25
X
120
B
TP
2
1 - 4
N
PT IGBT Power Mod
ule
Input rectifier bridge +
Brake + 3 Phase Bridge
APTGS25X120RTP2: Without Brake (Pin 7 & 14 not connected)
14
21
22
23
24
1 2 3 4 5 6
All ratings @ Tj = 25°C unless otherwise specified
101118 16
1315171920
12
9 8
7
Application
AC Motor control
Features
Non Punch Through (NPT) Low Loss IGBT®
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
1. Absolute maximum ratings
Diode rectifier
Symbol Parameter Max ratings Unit
V
Repetitive Peak Reverse Voltage 1600
RRM
ID DC Forward Current
I
Surge Forward Current tp = 10ms
FSM
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
V
= 1200V
CES
IC = 25A @ Tc = 80°C
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
TC = 80°C Tj = 25°C
Tj = 150°C
25 300 230
V
A
APT website – http://www.advancedpower.com
APTGS25X120BTP2 – Rev 0 July, 2003
APTGS25X120RTP2
APTG
25
X
120
B
TP
2
2 - 4
IGBT & Diode Brake
Symbol Parameter Max ratings Unit
V
Collector - Emitter Breakdown Voltage 1200
CES
IC Continuous Collector Current
ICM Pulsed Collector Current TC = 25°C 25
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation
IF DC Forward Current
IGBT & Diode Inverter
Symbol Parameter Max ratings Unit
V
Collector - Emitter Breakdown Voltage 1200
CES
IC Continuous Collector Current
ICM Pulsed Collector Current TC = 25°C 50
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation
SCSOA Short circuit Safe Operating Area
IF DC Forward Current
I
Surge Forward Current tp = 1ms
FSM
2. Electrical Characteristics
Diodes Rectifier
Symbol Characteristic Test Conditions Min Typ Max Unit
IR Reverse Current VR = 1600V Tj = 150°C
VF Forward Voltage
R
Junction to Case 1
thJC
IGBT Brake & Diode
Symbol Characteristic Test Conditions Min Typ Max Unit
I
Zero Gate Voltage Collector Current
CES
V
Collector Emitter on Voltage
CE(on)
V
Gate Threshold Voltage VGE = V
GE(th)
I
Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 300 nA
GES
C
Input Capacitance
ies
VF Forward Voltage
R
Junction to Case
thJC
(only for APTGS25X120BTP2)
Absolute maximum ratings
Electrical Characteristics
(only for APTGS25X120BTP2)
Absolute maximum ratings
TC = 25°C TC = 80°C 12.5
TC = 25°C TC = 80°C
TC = 25°C TC = 80°C 25
TC = 25°C Tj = 125°C
TC = 80°C TC = 80°C
IF = 30A IF = 25A
Electrical Characteristics
VGE = 0V VCE = 1200V
VGE =15V IC = 12.5A
CE
VGE = 0V, VCE = 25V f = 1MHz
VGE = 0V IF = 25A
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
, IC = 0.35 mA 4.5 5.5 6.5 V
Tj = 25°C 2.05 2.4
Tj = 125°C
20
100 W
25 A
45
230 W
160A @ 720V
25
50
2 mA
1.3 1.5
1.05 1.1
0.5 500 µA
0.8 mA
2.7 3.15
3.1
600 pF
1.9
IGBT 1.2
Diode 1.2
V
A
V
A
A
V
°C/W
V
V
°C/W
APT website – http://www.advancedpower.com
APTGS25X120BTP2 – Rev 0 July, 2003
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