ADMOS AMS232 Datasheet
Advanced AMS232
Monolithic NPN SILICON HIGH FREQUENCY TRANSISTOR
Systems
FEATURES APPLICATIONS
•• High Collector-Emitter Breakdown 120V Min. •• High density Television
•• High Frequency of 1.2GHz at 50mA •• Computer Monitors
•• Available in TO-220 Package
GENERAL DESCRIPTION
The AMS232 is an RF type small signal bipolar transistor designed for use in high performance applications such as
advanced color CRT monitor drivers that require both high frequency and high voltage. The use of fully ion implanted
technology and silicon nitride passivation makes the AMS232 a highly reliable device. For a complimentary PNP transistor in
applications where the matching characteristics are important use AMS264.
ORDERING INFORMATION:
PACKAGE TYPE
TO-220
AMS232
PIN CONNECTIONS
1- Emitter
2- Collector
3- Base
OPERATING JUNCTION
TEMP. RANGE
-40°C to +150°C
FRONT VIEW
3
2
1
ABSOLUTE MAXIMUM RATINGS (Note 1)
Collector - Emitter Voltage 125V Operating Junction Temperature
Collector - Base Voltage 130V Storage Temperature
Emitter - Base Voltage 3.5V
Collector Current 250mA Thermal Resistance, Junction to Case
Note1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. For guaranteed specifications and test conditions, see the
Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
Power Dissipation @ TC =75°C
-40°C to +150°C
25°C/W
150°C
5 W
Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
AMS232
ELECTRICAL CHARACTERISTICS
Electrical Characteristics at T
Parameter Symbol Conditions Min Typ Max Units
Off Characteristics
Collector - Emitter Breakdown Voltage V
Collector - Base Breakdown Voltage V
Emitter - Base Breakdown Voltage V
Collector Cutoff Current I
On Characteristics
DC Current Gain H
Dynamic Characteristics
Output Capacitance C
Collector Base Capacitance C
Input Capacitance C
Transistor Frequency f
= 25°C, unless otherwise specified
C
(BR)CEO
(BR)CBO
(BR)EBO
IC = 1mA, IB = 0 120 V
IC = 100µA, IB = 0
IE = 100nA, IC = 0 3 V
VCE = 110V, VBE = 0 100 nA
CES
IC = 50mA, VCE = 15V 50 -
FE
VCB = 10V, IE = 0, f = 1MHz 2.5 pF
OB
VCB = 10V, IE = 0, f = 1MHz 1.8 pF
CB
VEB = 3V, f = 1MHz 9 pF
IB
VCE = 15V, IC = 50mA 1.2 GHz
T
AMS232
120 V
TYPICAL PERFORMANCE CHARACTERISTICS
Gain Bandwidth Product vs
Collector Current
1400
1200
1000
800
600
400
GAIN BANDWIDTH PRODUCT (MHz)
0
30
15 45
COLLECTOR CURRENT (mA)
60
f =250MHz
VCE = 25V
90 150
75 105
120 135
Junction Capacitance vs Voltage
10
8
6
4
CAPACITANCE (pF)
2
0
3
6
0
COLLECTOR BASE VOLTAGE (V)
C
OB
C
CB
9 27
12 15 18 21 24
Input Capacitance vs Voltage
20
16
12
8
CAPACITANCE (pF)
4
30
0
0
EMITTER BASE VOLTAGE (V)
1
2 3 4
C
IB
5
Advanced Monolithic Systems, Inc. 6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
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