ACT ACT-S512K8N-055P4Q, ACT-S512K8N-055F4Q, ACT-S512K8N-055F3Q, ACT-S512K8N-045P4Q, ACT-S512K8N-045F4Q Datasheet

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eroflex Circuit Technology - Advanced Multichip Modules © SCD1664 REV C 5/10/00

Features

ACT–S512K8 High Speed

4 Megabit Monolithic SRAM

■ Low Power Monolithic CMOS 512K x 8 SRAM

■ Full Military (-55°C to +125°C) Temperature Range

■ Input and Output TTL Compatible Design

■ Fast 17,20,25,35,45 & 55ns Maximum Access Times

■ +5 V Power Supply

■ MIL-PRF-38534 Compliant MCMs Available

■ Industry Standard Pinouts

■ Packaging – Hermetic Ceramic

● 36 Lead, .92" x .51" x .13" Flat Package (FP), Aeroflex code# "F3"

● 36 Lead, .92" x .43" x .184" Small Outline J lead (CSOJ),

Aeroflex code# "F4"
(.155 MAX thickness available, contact factory for details)

● 32 Lead, 1.6" x .60" x .20" Dual-in-line (DIP), Aeroflex code# "P4"

■ DESC SMD# 5962–95613 Released(F3,F4,P4)

Block Diagram – Flat Package(F3,F16), DIP(P4) & CSOJ(F4)

CE

WE

OE

A0 – A18

Vss
Vcc

512Kx8

8

I/O0-7

CIRCUIT TECHNOLOGY

General Description

The ACT–S512K8 is a high
speed, 4 Megabit CMOS
Monolithic SRAM designed for
full temperature range military,
space, or high reliability mass
memory and fast cache
applications.

The MCM is input and output
TTL compatible. Writing is
executed when the write
enable (WE
(CE

) inputs are low and output
enable (OE) is high.Readingis
accomplished when WE
and CE
Access time grades of 17ns,
20ns, 25ns, 35ns, 45ns and
55ns maximum are standard.

The +5 Volt power supply
version is standard and +3.3
Volt lower power model is a
future optional product.

) and chip enable

is high

and OE are both low.

The products are designed

Pin Description

0-7 Data I/O

I/O

0–18 Address Inputs

A

for operation over the
temperature range of -55°C to
+125°C and under the full
military environment. A DESC

WE

CE
OE

CC Power Supply

V

SS Ground

V

NC Not Connected

Write Enable

Chip Enable

Output Enable

Standard Military Drawing
(SMD) number is released.

The ACT-S512K8 is
manufactured in Aeroflex’s
80,000 square foot
MIL-PRF-38534 certified
facility in Plainview, N.Y.

Absolute Maximum Ratings

Symbol Parameter MINIMUM MAXIMUM Units

-55 +125 °C

-65 +150 °C

- 1.1 W

-0.5 V

+ 0.5 V

CC

-0.5 +7.0 V

- +150 °C

T

V

T

STG

P
V

CC

T

C

Case Operating Temp.
Storage Temperature

D

G

Maximum Package Power Dissipation
Maximum Signal Voltage to Ground
Power Supply Voltage

J

Junction Temperature

Recommended Operating Conditions

Symbol Parameter Minimum Maximum Units

V

CC

V

IH

V

IL

T

A

Power Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil)

+4.5 +5.5 V
+2.2 V

+ 0.3 V

CC

-0.5 +0.8 V

-55 +125 °C

Truth Table

Mode CE OE WE Data I/O Power

Standby H X X High Z Standby (deselect/power down)

Read L L H Data OUT Active

Output Disable L H H High Z Active (deselected)

Write L X L Data IN Active

Capacitance

(V

= 0V, f = 1MHz, Tc = 25°C, unless otherwise noted, Guaranteed but not tested)

IN

Symbol Parameter Maximum Units

C

IN

C

OUT

Input Capacitance (A

0-18

Output Capacitance (I/O

, WE & OE)

& CE)

0-7

20 pF
20 pF

DC Characteristics

(VCC = 5.0V, VSS = 0V, Tc = -55°C to +125°C, unless otherwise specified)

Parameter Sym Conditions

I

Input Leakage Current
Output Leakage Current

Operating Supply Current

Standby Current

Output Low Voltage
Output High Voltage

VCC = Max, VIN=0toV

LI

I

CE = VIH, OE = VIH, V

LO

CE = VIL, OE = VIH, Vcc=5.5V,

I

CC

f=5MHz CMOS Compatible
CE = Vcc, OE= VIH, Vcc=5.5V,

I

SB

f=5MHz CMOS Compatible

V

IOL = 8 mA, Vcc = 4.5V

OL

V

IOH = -4 mA, Vcc = 4.5V

OH

CC

OUT

= 0toV

CC

ALL SPEEDS

Min Max

-10 +10 µA

-10 +10 µA

- 170 mA

- 20 mA

- 0.4 V

2.4 - V

Units

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2

Read Cycle

Parameter

Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Address Change
Output Enable to Output Valid
Chip Select to Output in Low Z (1)
Output Enable to Output in Low Z (1)
Chip Deselect to Output in High Z (1)
Output Disable to Output in High Z (1)

Note 1. Guaranteed by design, but not tested

Write Cycle

Parameter

Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write (1)
Write to Output in High Z (1)
Data Hold from Write Time

Note 1. Guaranteed by design, but not tested

AC Characteristics

(VCC = 5.0V, VSS= 0V, Tc= -55°C to +125°C)

Sym

t

t
t
t
t

Sym

t
t

t

t

t

–017

Min Max

17 - 20 - 25 - 35 - 45 - 55 -

t

RC

- 17 - 20 - 25 - 35 - 45 - 55

t

AA

- 17 - 20 - 25 - 35 - 45 - 55

ACS

0 - 0 - 0 - 0 - 0 - 0 -

t

OH

- 9 - 10 - 12 - 25 25 25 ns

t

OE

2 - 2 - 2 - 4 - 4 - 4 - ns

CLZ

0 - 0 - 0 - 0 - 0 - 0 -

OLZ

- 9 - 10 - 12 - 15 - 20 - 20

CHZ

- 9 - 10 - 12 - 15 - 20 - 20

OHZ

–017

Min Max

17 - 20 - 25 - 35 - 45 - 55 - ns

WC

15 - 15 - 20 - 25 - 35 - 50 - ns

CW

t

15 - 15 - 20 - 25 - 35 - 50 - ns

AW

12 - 12 - 15 - 20 - 25 - 25 - ns

DW

t

14 - 14 - 15 - 25 - 35 - 40 - ns

WP

t

2 - 2 - 2 - 2 - 2 - 2 - ns

AS

t

0 - 0 - 0 - 0 - 5 - 5 - ns

AH

0 - 0 - 0 0 5 - 5 - ns

OW

- 9 - 9 - 10 - 15 - 20 - 25 ns

WHZ

t

0 - 0 - 0 - 0 - 0 - 0 - ns

DH

–020

Min Max

–020

Min Max

–025

Min Max

–025

Min Max

Min Max

Min Max

–035

–035

–045

Min Max

–045

Min Max

–055

Min Max

–055

Min Max

Units

ns
ns
ns
ns

ns
ns
ns

Units

Data Retention Electrical Characteristics (Special Order Only)

(Tc = -55°C to +125°C)

Parameter Sym Test Conditions

for Data Retention

V

CC

Data Retention Current (1)

Available in Low Power version. Call For Information.

V

DR

I

CCDR1

CE ≥ V

V

CC

CC

= 3V

– 0.2V

ALL SPEEDS

Min Typ Max

2 - 5.5 V

- 0.5 7.0 mA

Units

Truth Table

Mode CE OE WE Data I/O Power

Standby H X X High Z Standby (deselect/power down)

Read L L H Data Out Active

Output Disable L H H High Z Active (deselected)

Write L X L Data In Active

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