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ACT-S128K32V High Speed 3.3Volt
4 Megabit SRAM Multichip Module
Features
■ 4 Low Power CMOS 128K x 8 SRAMs in one MCM
■ Overall configuration as 128K x 32
■ Input and Output TTL Compatible
■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by
Special Order
■ Full Military (-55°C to +125°C) Temperature Range
■ +3.3V Power Supply
■ Choice of Surface Mount or PGA Type Co-fired Packages:
● 68–Lead, Dual-Cavity CQFP (F2), .88"SQ x .20"max (.18"max thickness
available, contact factory for details) (Drops into the 68 Lead JEDEC .99"SQ
CQFJ footprint)
● 66–Lead, PGA-Type (P7), 1.08"SQ x .160"max
Internal Decoupling Capacitors
■
■DESC SMD# Pending
Block Diagram – PGA Type Package(P7) & CQFP(F2)
CE4
A0 – A16
OE
CE3 WE4WE3WE2WE1 CE1 CE2
128Kx8 128Kx8 128Kx8 128Kx8
8 8 8 8
I/O0-7 I/O8-15 I/O16-23 I/O24-31
I/O
A
WE
CE
Pin Description
0-31 Data I/O
0–16 Address Inputs
1–4 Write Enables
1–4 Chip Enables
Output Enable
OE
cc Power Supply
V
GND Ground
NC Not Connected
CIRCUIT TECHNOLOGY
www.aeroflex.com/act1.htm
General Description
The ACT–S128K32V is a High
Speed 4 megabit CMOS SRAM
Multichip Module (MCM)
designed for full temperature
range, 3.3V Power Supply,
military, space, or high reliability
mass memory and fast cache
applications.
The MCM can be organized
as a 128K x 32 bits, 256K x 16
bits or 512k x 8 bits device and
is input and output TTL
compatible. Writing is executed
when the write enable (WE
and chip enable (CE
low. Reading is accomplished
when WE
is high and CE and
output enable (OE
low. Access time grades of
17ns, 20ns, 25ns, 35ns, 45ns
and 55ns maximum are
standard.
The products are designed for
operation over the temperature
range of -55°C to +125°C and
screened under the full military
environment. DESC Standard
Military Drawing (SMD) part
numbers are pending.
The ACT-S128K32V is
manufactured in Aeroflex’s
80,000ft
2
MIL-PRF-38534
certified facility in Plainview,
N.Y.
) inputs are
) are both
)
eroflex Circuit Technology - Advanced Multichip Modules © SCD3359 REV B 12/17/98
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Absolute Maximum Ratings
Symbol Rating Range Units
-55 to +125 °C
-65 to +150 °C
3.0 W
2.7 W
3.0 °C/W
9.0 °C/W
-0.5 to +4.6 V
300 °C
T
Ø
T
STG
P
J-C
V
T
C
Case Operating Temperature
Storage Temperature
D
Maximum Package Power Dissipation
P7 Packages
F2 Package
Hottest Die, Max Thermal Resistance - Junction to Case
P7 Packages
F2 Package
G
L
Maximum Signal Voltage to Ground
Maximum Lead Temperature (10 seconds)
Normal Operating Conditions
Symbol Parameter Minimum Maximum Units
V
CC
V
IH
V
IL
Power Supply Voltage
Input High Voltage
Input Low Voltage
+3.0 +3.6 V
+2.0 V
+ 0.3 V
CC
-0.3 +0.8 V
Truth Table
Mode CE OE WE Data I/O Power
Standby H X X High Z Standby (deselect/power down)
Read L L H Data Out Active
Read L H H High Z Active (deselected)
Write L X L Data In Active
Capacitance
(f = 1MHz, T
Symbol Parameter Maximum Units
AD
C
C
C
C
C
A0 – A16 Capacitance
OE
OE Capacitance
WE
Write Enable Capacitance
CE
Chip Enable Capacitance
I/O
I/O0 – I/O31 Capacitance
Capacitance is guaranteed by design but not tested.
= 25°C)
C
50 pF
50 pF
20 pF
20 pF
20 pF
DC Characteristics
(3.0Vdc< VCC < 3.6Vdc, VSS = 0V, TC = -55°C to +125°C, Unless otherwise specified)
Parameter Sym Conditions
VCC = Max,
Input Leakage Current
Output Leakage Current
Operating Supply Current 32
Bit Mode
I
LI
I
LO
x32
I
CC
=0orV
V
IN
CC
CE = VIH, OE = VIH,
=0orV
V
OUT
CE
= VIL, OE = VIH,
f = 5 MHz, V
CC
= Max,
CC
CMOS Compatible
& –020
–017
Min Max
750 500 420 mA
–025
& –035
Min Max
10 10 10 µA
10 10 10 µA
–045
& –055
Min Max
Units
Aeroflex Circuit Technology ACT-S128K32V SCD3359 REV B 12/17/98 Plainview NY (516) 694-6700
2
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(3.0Vdc< VCC < 3.6Vdc, VSS = 0V, TC = -55°C to +125°C, Unless otherwise specified)
DC Characteristics (continued)
Parameter Sym Conditions
CE = VIH, OE = VIH,
Standby Current
Output Low Voltage
Output High Voltage
I
SB
f = 5 MHz, V
= Max,
CC
CMOS Compatible
V
V
IOL = 8 mA, VCC = Min
OL
IOH = -4.0 mA, VCC = Min
OH
& –020
–017
Min Max
–025
& –035
Min Max
–045
& –055
Min Max
80 60 60 mA
0.4 0.4 0.4 V
2.4 2.4 2.4 V
Units
(VCC = 3.3V, VSS = 0V, TC = -55°C to +125°C)
Read Cycle
Parameter Sym
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Output Enable to Output Valid
Chip Enable to Output in Low Z *
Output Enable to Output in Low Z *
Chip Deselect to Output in High Z *
Output Disable to Output in High Z *
t
RC
t
AA
t
ACE
t
OH
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
* Parameters guaranteed by design but not tested
–017
Min Max
17 20 25 35 45 55 ns
0 0 0 0 0 0 ns
3 3 3 3 3 3 ns
0 0 0 0 0 0 ns
Write Cycle
Parameter Sym
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Output Active from End of Write *
Write to Output in High Z *
Data Hold from Write Time
Address Hold Time
t
WC
t
CW
t
AW
t
DW
t
WP
t
t
OW
t
WHZ
t
t
AS
DH
AH
* Parameters guaranteed by design but not tested
–017
Min Max
17 20 25 35 45 55 ns
12 15 20 25 30 40 ns
12 15 20 25 30 40 ns
10 12 15 18 20 20 ns
13 15 20 25 30 40 ns
0 0 0 0 0 0 ns
3 3 3 4 4 4 ns
0 0 0 0 0 0 ns
0 0 0 0 0 0 ns
AC Characteristics
–020
Min Max
17 20 25 35 45 55 ns
17 20 25 35 45 55 ns
9 12 15 20 25 30 ns
12 12 12 15 20 20 ns
10 11 12 15 20 20 ns
–020
Min Max
10 10 10 15 15 15 ns
–025
Min Max
–025
Min ax
–035
Min Max
–035
Min Max
–045
Min Max
–045
Min Max
–055
Min Max
–055
Min Max
Units
Units
Aeroflex Circuit Technology ACT-S128K32V SCD3359 REV B 12/17/98 Plainview NY (516) 694-6700
3