ACT ACT-PD1M16W-070L4I, ACT-PD1M16N-070L4T, ACT-PD1M16N, ACT-PD1M16Y-070L4T, ACT-PD1M16Y Datasheet

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eroflex Circuit Technology - Advanced Multichip Modules © SCD3750 REV A 8/31/98

ACT–PD1M16 Fast Page Mode

F

E

I

D

C

E

R

T

A

E

R

O

F

L

E

X

L

A

B

S

I

N

C

.

16 Megabit Plastic Monolithic DRAM

Vcc
I/O0
I/O1
I/O2
I/O3

Vcc
I/O4
I/O5
I/O6
I/O7

NC
NC

WE

RAS

NC
NC

A0
A1
A2
A3

Vcc

Pin Configuration

Top View

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21

42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22

VSS
I/O15
I/O14
I/O13
I/O12

SS

V
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4

SS

V

CIRCUIT TECHNOLOGY

Features

■ Fast Access Time (tRAC): 70ns

■ Power Supply: 5.0V ± 0.5V

■ Packaging

● 42 Lead Plastic Surface-Mount SOJ (L4)

■ Industrial and Military Temperature Ranges

■ Three-State Unlatched Output

■ Fast Page Mode

■ RAS-Only Refresh

■ xCAS Before RAS Refresh

■ Hidden Refresh

■ 1024 Cycle Refresh in 16ms

■ Low Power Dissipation

■ Long Refresh Period Option

Pin Description

0–9 Address Inputs

A

0-15 Data Input / Output

I/O

WE

Read/Write Enable

OE

RAS

UCAS

LCAS

CC +5.0V Power Supply

V

SS Ground

V

NC Not Connected

Upper Byte Control / Column Address Strobe
Lower Byte Control / Column Address Strobe

Output Enable

Row Address Strobe

ISO

900

1

I

Absolute Maximum Ratings

Symbol Parameter MINIMUM MAXIMUM Units

T

C

T

STG

I

OS

P

T

V

CC

V

T

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under
“recommended operating conditions” is not implied. Exposure to absolute-maximum rated conditions for extended periods may
affect device reliability.
* All voltage values are with respect to Vss.

Case Operating Temp.
Storage Temperature
Short Circuit Output Current
Power Dissipated
Supply Voltage Range
Voltage Range on any Pin*

-55 +125 °C

-55 +150 °C

- 50 mA

- 1 W

-1.0 +7.0 V

-1.0 +7.0 V

Recommended Operating Conditions

Symbol Parameter Minimum Maximum Units

V

CC

V

IH

V

IL

T

CM

T

CI

Power Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil)
Operating Temp. (Ind.)

+4.5 +5.5 V
+2.4 - V

- +0.8 V

-55 +125 °C

-40 +85 °C

Capacitance

(V

= 0V, f = 1MHz, Tc = 25°C)

IN

Symbol Parameter Maximum Units

C

I(A)

C

I(RC)

C

I(OE)

C

I(WE)

C

O

These parameters are guaranteed by design but not tested.

A

Input Capacitance

0-9

RAS and CAS Input Capacitance
OE Input Capacitance
WE Input Capacitance
Output Capacitance

10 pF
10 pF
10 pF
10 pF
15 pF

DC Characteristics

(VCC = 5.0V, VSS = 0V, TCI or TCM)

Parameter Sym Conditions Min Max Units

Output Low Voltage
Output High Voltage
Input Leakage Current
Output Leakage Current
Read or Write Cycle Current

1,2

V

IOL = 4.2 mA

OL

V

IOH = -5 mA

OH

I

VI=0to+6.5V, All others 0V to V

L

I

I

CC1

O

VO=0toV
V

= 5.5V, minimum cycle

CC

CAS high

CC,

CC

- 0.4 V

2.4 V

-10 +10 µA

-10 +10 µA
190 mA

Aeroflex Circuit Technology SCD3750 REV A 8/31/98 Plainview NY [phone]

2

DC Characteristics (continued)

(VCC = 5.0V, VSS = 0V, T CI or TCM)

Parameter Sym Conditions Min Max Units

VIH = 2.4V (TTL), After 1 memory cycle,

I

CC2

Standby Current

I

CC3

Average Page Current

1. Measured with a maximum of one address change while RAS = VIL.

2. Measured with a maximum of one address change while CAS

2

I

CC4

and CAS high

RAS
VIH = Vcc - 0.05V (CMOS), After 1 memory

cycle, RAS

and CAS high

RAS low, CAS cycling

= VIH.

- 2 mA

- 1 mA

- 100 mA

AC Characteristics*

(VCC = 5.0V ±10%, VSS= 0V, TCI or TCM)

Parameter

Access Time from Column-Address

Low Access Time from CAS

CAS
Column Access Time from CAS

Precharge

Access Time from RAS

Access Time

OE

1

Output Buffer Turn-off Delay
Output Buffer Turn-off Delay Time from OE

* Valid data is presented at the outputs after all access times are satisfied but can go from the high-impedance
state to an invalid-data state prior to the specified access times as the outputs are driven when CAS

OFF and tOEZ are specified when the outputs are no longer driven. The outputs are disabled by bringing either

1. t
or CAS high.

OE

1

Sym Min Max Units

AA - 35 ns

t

tCAC - 20 ns
tCPA - 40 ns
tRAC - 70 ns
tOEA - 20 ns

tOFF 0 15 ns

tOEZ 0 15 ns

goes low.

AC Characteristics

(VCC = 5.0V, VSS = 0V, TCI or TCM)

Parameter

Cycle Time, Read or Write Random 1
Cycle Time, Fast Page Mode Read or Write
Cycle Time, Fast Page Mode Read-Modify-Write
Pulse Duration, RAS Low Fast Page Mode
Pulse Duration, RAS Low Nonpage Mode
Pulse Duration, CAS Low

4

Pulse Duration, CAS High Precharge Time
Pulse Duration, RAS High Precharge Time
Pulse Duration, WE Low
Setup Time, Column Address before CAS Low
Setup Time, Row Address before RAS Low
Setup Time, Data

5

Setup Time, WE High before CAS Low
Setup Time, WE Low before CAS High
Setup Time, WE Low before RAS High

1,2

3

3

Sym Min Max Units

RC 130 -

t

tPC 45 -

1

tPRWC 90 -

tRASP 70 200,000

tRAS 70 10,000 ns
tCAS 20 10,000 ns

tCP 10 -
tRP 50 -

tWP 15 -
tASC 0 -
tASR 0 - ns

ns
ns
ns
ns

ns
ns
ns
ns

tDS 0 - ns

t
t
t

RCS
CWL
RWL

0 - ns
20 - ns
20 - ns

Aeroflex Circuit Technology SCD3750 REV A 8/31/98 Plainview NY [phone]

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