ACT ACT-F4M32C-100F2M, ACT-F4M32C-100F2I, ACT-F4M32C-100F2C, ACT-F4M32C-100F1M, ACT-F4M32C-100F1I Datasheet
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ACT–F4M32A High Speed 128 Megabit
Sector Erase
FLASH Multichip Module
Advanced
CIRCUIT TECHNOLOGY
Features
■ 8 Low Voltage/Power AMD 2M x 8 FLASH Die in One
MCM Package
■ Overall Configuration is 4M x 32
■ +5V Power Supply / +5V Programing Operation
■ Access Times of 100, 120 and 150 ns
■ Erase/Program Cycles – 100,000 Minimum (+25°C)
■ Sector erase architecture (Each Die)
● 32 uniform sectors of 64 Kbytes each
● Any combination of sectors can be erased. Also
supports full chip erase
● Sector group protection is user definable
Embedded Erase Algorithims – Automatically
■
pre-programs and erases the die or any sector
■ Embedded Program Algorithims – Automatically
programs and verifies data at specified address
www.aeroflex.com/act1.htm
■ Ready/Busy output (RY/BY) – Hardware method for
detection of program or erase cycle completion
■ Hardware RESET pin – Resets internal state machine
to the read mode
■ Erase Suspend/Resume – Supports reading or
programming data to a sector not being erased
■ Packaging – Hermetic Ceramic
● 68–Lead, Low Profile CQFP(F1), 1.56"SQ x .140"max
● 68–Lead, Dual-Cavity CQFP(F2), 0.88"SQ x .20"max
(.18 max thickness available, contact factory for details)
(Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint)
Internal Decoupling Capacitors for Low Noise
■
Operation
■ Commercial, Industrial and Military Temperature
Ranges
■ MIL-PRF-38534 Compliant MCMs Available
Block Diagram – CQFP(F1)
A21
RESET
WE
A0 - A20
OE
RY/BY
CE1
Buffer
2Mx8
2Mx8
Block Diagram – CQFP(F2)
RESET
WE
A0 - A 20
OE
RY/BY
2Mx8
1
CE
CE2
2 CE3
CE
2Mx8
2Mx8
I/O8-15 I/O16-23I/O0-7 I/O24-31
I/O8-15 I/O16-23I/O0-7 I/O24-31
8 88 8
2Mx8
2Mx8
2Mx8
2Mx8
2Mx8
2Mx8
2Mx8
2Mx8
2Mx8
CE4
2Mx8
2Mx8
Pin Description
0-31 Data I/O
I/O
0–21 Address Inputs
A
WE
CE
OE
RESET
RY/BY
Write Enables
1-4 Chip Enables
Output Enable
Reset
Ready/Busy
VCC Power Supply
GND Ground
8888
NC Not Connected
Pin Description
0-31 Data I/O
I/O
0–20 Address Inputs
A
WE
CE
OE
RESET
RY/BY
Write Enable
1,2 Chip Enables
Output Enable
Reset
Ready/Busy
VCC Power Supply
GND Ground
NC Not Connected
eroflex Circuit Technology - Advanced Multichip Modules © SCD3866 REV 1 12/4/98
General Description
Utilizing AMD’s Sector Erase Flash Memory Die, the ACT-F4M32A is a high speed, 128
megabit CMOS flash multichip module (MCM) designed for full temperature range, military,
space, or high reliability applications.
The ACT-F4M32A consists of eight high-performance AMD Am29F016 16Mbit
(16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groups
of 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each).
The command register is written by bringing WE
low and OE
(OE
) being logically active. Access time grades of 100ns, 120ns and 150ns maximum are
is high (VIH). Reading is accomplished by chip Enable (CE) and Output Enable
to a logic low level (VIL), while CE is
standard.
The ACT-F4M32A is offered in two different hermetically sealed co-fired 68 lead
ceramic packages. This allows operation in a military environment temperature range of
-55°C to +125°C.
The ACT-F4M32A can be programmed (both read and write functions) in-system using
the +5.0V V
operations. The end of program or erase is detected by the RY/BY
CC power supply. A 12.0V VPP is not required for programming or erase
pin, Data Polling of
DQ7, or by the Toggle bit (DQ6).
The ACT-F4M32A also has a hardware RESET
pin. When this pin is driven low,
execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be
terminated.
Each block can be independently erased and programmed 100,000 times at +25°C.
For Detail Information regarding the operation of the Am29F016 Sector Erase Flash
Memory, see the AMD datasheet (Publication 18805).
Aeroflex Circuit Technology SCD3866 REV 1 12/4/98 Plainview NY (516) 694-67002
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