ACT ACT-F128K32N-150P7Q, ACT-F128K32N-150P3Q, ACT-F128K32N-150F5Q, ACT-F128K32N-120P7Q, ACT-F128K32N-120P3Q Datasheet

ACT–F128K32 High Speed

4 Megabit FLASH Multichip Module

CIRCUIT TECHNOLOGY

www.aeroflex.com

Features

■ 4 Low Power 128K x 8 FLASH Die in One MCM

Package

■ Organized as 128K x 32

● User Configurable to 256K x 16 or 512K x 8

● Upgradable to 512K x 32 in same Package Style

■ Access Times of 60, 70, 90, 120 and 150ns

■ +5V Programing, 5V ±10% Supply

■ 100,000 Erase/Program Cycles Typical, 0°C to +70°C

■ Low Standby Current

■ TTL Compatible Inputs and CMOS Outputs

■ Embedded Erase and Program Algorithms

■ Page Program Operation and Internal Program

Control Time

■ Commercial, Industrial and Military Temperature

Ranges

■ MIL-PRF-38534 Compliant MCMs Available

■ Industry Standard Pinouts

■ Packaging – Hermetic Ceramic

● 68 Lead, .88" x .88" x .160" Single-Cavity Small

Outline gull wing, Aeroflex code# "F5" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)

● 66 Pin, 1.08" x 1.08" x .160" PGA Type, No

Shoulder, Aeroflex code# "P3"

● 66 Pin, 1.08" x 1.08" x .185" PGA Type, With

Shoulder, Aeroflex code# "P7"

■ Sector Architecture (Each Die)

● 8 Equal size sectors of 64K bytes each

● Any Combination of Sectors can be erased with

one command sequence

● Supports Full Chip Erase

■ DESC SMD# 5962–94716 Released (P3,P7,F5)

Block Diagram – PGA Type Package(P3,P7) & CQFP(F5)

CE3 WE4WE3WE2WE1 CE1 CE2

OE

A0–A16

128Kx8 128Kx8 128Kx8 128Kx8

8 8 8 8

CE4

I/O0-7 I/O8-15 I/O16-23 I/O24-31

Pin Description

I/O

0-31 Data I/O

A

0–16 Address Inputs

WE

1-4 Write Enables

CE

1-4 Chip Enables

OE

Output Enable

V

CC Power Supply

GND Ground

NC Not Connected

General Description

The ACT–F128K32 is a high
speed, 4 megabit CMOS flash
multichip module (MCM)
designed for full temperature
range military, space, or high
reliability applications.

The MCM can be organized
as a 128K x 32 bits, 256K x 16
bits or 512K x 8 bits device and
is input TTL and output CMOS
compatible. The command
register is written by bringing

to a logic low level (VIL),

WE
while CE
logic high level (V
accomplished by chip Enable

) and Output Enable (OE)

(CE
being logically active, see
Figure9. Access time grades of
60ns, 70ns, 90ns, 120ns and
150ns maximum are standard.

The ACT–F128K32 is
packaged in a hermetically

is low and OE is at

IH). Reading is

eroflex Circuit Technology - Advanced Multichip Modules © SCD1667 REV A 4/28/98

General Description, Cont’d,

sealed co-fired ceramic 66 pin, 1.08"sq
PGA or a 68 lead, .88" sq Ceramic Gull
Wing CQFP package for operation over the
temperature range of -55°C to +125°C and
military environment.

Each flash memory die is organized as
128KX8 bits and is designed to be
programmed in-system with the standard
system 5.0V Vcc supply. A 12.0V V

PP is

not required for write or erase operations.
The MCM can also be reprogrammed with
standard EPROM programmers (with the
proper socket).

The standard ACT-F128K32 offers
access times between 60ns and 150ns,
allowing operation of high-speed
microprocessors without wait states. To
eliminate bus contention, the device has
separate chip enable (CE

). The ACT-F128K32 is command set

(WE

) and write enable

compatible with JEDEC standard 1 Mbit
EEPROMs. Commands are written to the
command register using standard
microprocessor write timings. Register
contents serve as input to an internal
state-machine which controls the erase and
programming circuitry. Write cycles also
internally latch addresses and data needed
for the programming and erase operations.

Reading data out of the device is similar
to reading from 12.0V Flash or EPROM
devices. The ACT-F128K32 is programmed
by executing the program command
sequence. This will invoke the Embedded
Program Algorithm which is an internal
algorithm that automatically times the
program pulse widths and verifies proper
cell margin. Typically, each sector can be
programmed and verified in less than 0.3

second. Erase is accomplished by
executing the erase command sequence.
This will invoke the Embedded Erase
Algorithm which is an internal algorithm
that automatically preprograms the array, (if
it is not already programmed before)
executing the erase operation. During
erase, the device automatically times the
erase pulse widths and verifies proper cell
margin.

Each die in the module or any individual
sector of the die is typically erased and
verified in 1.3 seconds (if already
completely preprogrammed).

Each die also features a sector erase
architecture. The sector mode allows for
16K byte blocks of memory to be erased
and reprogrammed without affecting other
blocks. The ACT-F128K32 is erased when
shipped from the factory.

The device features single 5.0V power
supply operation for both read and write
functions. lnternally generated and
regulated voltages are provided for the
program and erase operations. A low V

CC

detector automatically inhibits write
operations on the loss of power. The end of
program or erase is detected by Data
Polling of D7 or by the Toggle Bit feature on
D6. Once the end of a program or erase
cycle has been completed,-+ the device
internally resets to the read mode.

All bits of each die, or all bits within a
sector of a die, are erased via
Fowler-Nordhiem tunneling. Bytes are
programmed one byte at a time by hot
electron injection.

DESC Standard Military Drawing (SMD)
numbers are released.

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2

z

Absolute Maximum Ratings

Parameter Symbol Range Units

C -55 to +125 °C

Case Operating Temperature
Storage Temperature Range
Supply Voltage Range
Signal Voltage Range (Any Pin Except A9) Note 1
Maximum Lead Temperature (10 seconds)
Data Retention
Endurance (Write/Erase cycles)
A9 Voltage for sector protect, Note 2
Note 1. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may undershoot V

to 20ns. Maximum DC voltage on input and I/O pins is V

CC + 2.0V for periods up to 20 ns.

V

Note 2. Minimum DC input voltage on A9 is -0.5V. During voltage transitions, A9 may undershoot VSS to -2.0V for periods of up to 20ns.

CC + 0.5V. During voltage transitions, inputs and I/O pins may overshoot to

T

STG -65 to +150 °C

T

CC -2.0 to +7.0 V

V

G -2.0 to +7.0 V

V

300 °C

10 Years

100,000 Minimum

ID -2.0 to +14.0 V

V

SS to -2.0v for periods of up

Maximum DC input voltage on A9 is +12.5V which may overshoot to 14.0V for periods up to 20ns.

Normal Operating Conditions

Symbol Parameter Minimum Maximum Units

CC

V

V
V

T

V

Power Supply Voltage

IH

Input High Voltage

IL

Input Low Voltage

C

Operating Temperature (Military)

ID

A9 Voltage for sector protect

+4.5 +5.5 V
+2.0 V

+ 0.5 V

CC

-0.5 +0.8 V

-55 +125 °C

11.5 12.5 V

Capacitance

(VIN= 0V, f = 1MHz, TC = 25°C)

Symbol Parameter Maximum Units

AD

C
C

C

A0 – A16 Capacitance

OE

OE Capacitance

WE

Write Enable Capacitance
CQFP(F5) Package
PGA(P3,P7) Package

CE

C

C

Chip Enable Capacitance

I/O

I/O0 – I/O31 Capacitance

50 pF
50 pF

20 pF
20 pF
20 pF
20 pF

Parameters Guaranteed but not tested

DC Characteristics – CMOS Compatible

(Vcc = 5.0V, Vss = 0V, TC = -55°C to +125°C, unless otherwise indicated)

Parameter Sym Conditions

LI

I

CC = 5.5V, ViN = GND to VCC

Input Leakage Current
Output Leakage Current
Active Operating Supply Current for Read (1)
Active Operating Supply Current for Program or Erase(2)
Standby Supply Current
Static Supply Current (4)
Output Low Voltage
Output High Voltage
Output High Voltage (4)
Low Power Supply Lock-Out Voltage (4)

V

LOX32

I

I
I
I
I

V
V
V

CC = 5.5V, ViN = GND to VCC

V

CC1
CC2
CC3
CC4

OL

V

OH1
OH2

LKO 3.2 V

= VIL, OE = VIH, f = 5MHz

CE

= VIL, OE = VIH

CE

CC = 5.5V, CE = VIH, f = 5MHz

V

CC = 5.5V, CE = VIH

V
IOL = +8.0 mA, VCC = 4.5V

OH = –2.5 mA, VCC = 4.5V

I

OH = –100 µA, VCC = 4.5V

I

Note 1. The Icc current listed includes both the DC operating current and the frequency dependent component (At 5 MHz). The frequency

component typically is less than 2 mA/MHz, with OE
Note 2. Icc active while Embedded Algorithm (Program or Erase) is in progress.
Note 3. DC Test conditions: V

IL = 0.3V, VIH = VCC - 0.3V, unless otherwise indicated

at VIN.

Note 4. Parameter Guaranteed but not tested.

Speeds 60, 70, 90, 120 & 150ns

Minimum Maximum Units

10 µA

10 µA
140 mA
200 mA

6.5 mA

0.6 mA

0.45 V

0.85 x V

CC V

V

CC – 0.4 V

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Parameter

Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable to Output Valid
Chip Enable to Output High Z (1)
Output Enable High to Output High Z (1)
Output Hold from Address, CE

or OE Change, whichever is first

Note 1. Guaranteed by design, but not tested

Characteristics – Read Only Operations

(Vcc = 5.0V, Vss = 0V, TC = -55°C to +125°C)

Symbol

JEDEC Stand’d

AVAV tRC 60 70 90 120 150 ns

t

AVQV tACC 60 70 90 120 150 ns

t

ELQV tCE 60 70 90 120 150 ns

t

GLQV tOE 30 35 40 50 55 ns

t

EHQZ tDF 20 20 25 30 35 ns

t

GHQZ tDF 20 20 25 30 35 ns

t
t

AXQX tOH 0 0 0 0 0 ns

–60

Min Max

–70

Min Max

–90

Min Max

–120

Min Max

–150

Min Max

Units

AC Characteristics – Write/Erase/Program Operations, WE Controlled

Parameter

Write Cycle Time
Chip Enable Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Enable Hold Time (1)
Write Enable Pulse Width High
Duration of Byte Programming Operation
Sector Erase Time
Chip Erase Time
Read Recovery Time before Write (1)
Vcc Setup Time (1)
Chip Programming Time
Output Enable Setup Time (1)
Output Enable Hold Time (1)
Note 1. Guaranteed by design, but not tested

AC Characteristics – Write/Erase/Program Operations, CE Controlled

Parameter

Write Cycle Time
Write Enable Setup Time
Chip Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Hold Time (1)
Write Select Pulse Width High
Duration of Byte Programming
Sector Erase Time
Chip Erase Time
Read Recovery Time (1)
Chip Programming Time
Note 1. Guaranteed by design, but not tested

(Vcc = 5.0V, Vss = 0V, Tc = -55°C to +125°C)

Symbol

JEDEC Stand’d

AVAC tWC 60 70 90 120 150 ns

t

ELWL tCE 0 0 0 0 0 ns

t

WLWH tWP 30 35 45 50 50 ns

t

AVWL tAS 0 0 0 0 0 ns

t

DVWH tDS 30 30 45 50 50 ns

t

WHDX tDH 0 0 0 0 0 ns

t

WLAX tAH 45 45 45 50 50 ns

t

WHEH tCH 0 0 0 0 0 ns

t

WHWL tWPH 20 20 20 20 20 ns

t

WHWH1 14 TYP 14 TYP 14 TYP 14 TYP 14 TYP µs

t

WHWH2 60 60 60 60 60 Sec

t

WHWH3 120 120 120 120 120 Sec

t

–60

Min Max

tGHWL 0 0 0 0 0 µs

VCE 50 50 50 50 50 µs

t

12.5 12.5 12.5 12.5 12.5 Sec

OES 0 0 0 0 0 ns

t

OEH 10 10 10 10 10 ns

t

(Vcc = 5.0V, Vss = 0V, TC = -55°C to +125°C)

Symbol

JEDEC Stand’d

AVAC tWC 60 70 90 120 150 ns

t

WLEL tWS 0 0 0 0 0 ns

t

ELEH tCP 35 35 45 50 55 ns

t

AVEL tAS 0 0 0 0 0 ns

t

DVEH tDS 30 30 45 50 55 ns

t

EHDX tDH 0 0 0 0 0 ns

t

ELAX tAH 45 45 45 50 55 ns

t

EHWH tWH 0 0 0 0 0 ns

t

EHEL tCPH 20 20 20 20 20 ns

t

WHWH1 14 TYP 14 TYP 14 TYP 14 TYP 14 TYP µs

t

WHWH2 60 60 60 60 60 Sec

t

WHWH3 120 120 120 120 120 Sec

t

–60

Min Max

tGHEL 0 0 0 0 0 ns

12.5 12.5 12.5 12.5 12.5 Sec

–70

Min Max

–70

Min Max

–90

Min Max

–90

Min Max

–120

Min Max

–120

Min Max

–150

Min Max

–150

Min Max

Units

Units

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Device Operation

The ACT-F128K32 MCM is composed of four, one
megabit flash EEPROMs. The following description is for
the individual flash EEPROM device, is applicable to
each of the four memory chips inside the MCM. Chip 1 is
distinguished by CE

8-15, Chip 3 by CE3 and I/016-23, and Chip 4 by CE4 and

I/0

24-31.

I/0

1 and I/O1-7, Chip 2 by CE2 and

Programming of the ACT-F128K32 is accomplished by
executing the program command sequence. The
program algorithm, which is an internal algorithm,
automatically times the program pulse widths and verifies
proper cell status. Sectors can be programed and
verified in less than 0.3 second. Erase is accomplished
by executing the erase command sequence. The erase
algorithm, which is internal, automatically preprograms
the array if it is not already programed before executing
the erase operation. During erase, the device
automatically times the erase pulse widths and verifies
proper cell status. The entire memory is typically erased
and verified in 3 seconds (ifpre-programmed). The
sector mode allows for 16K byte blocks of memory to be
erased and reprogrammed without affecting other blocks.

Bus Operation

current consumed is typically less than 400 µA; and a
TTL standby mode (CE

is held VIH) is approximately 1
mA. In the standby mode the outputs are in a high
impedance state, independent of the OE

input.

If the device is deselected during erasure or
programming, the device will draw active current until the
operation is completed.

WRITE

Device erasure and programming are accomplished via
the command register. The contents of the register serve
as input to the internal state machine. The state machine
outputs dictate the function of the device.

The command register itself does not occupy an
addressable memory location. The register is a latch
used to store the command, along with address and data
information needed to execute the command. The
command register is written by bringing WE
level (V

IL), while CE is low and OE is at VIH. Addresses

are latched on the falling edge of WE
happens later. Data is latched on the rising edge of the

or CE whichever occurs first. Standard

WE
microprocessor write timings are used. Refer to AC
Program Characteristics and Waveforms, Figures 3,
8and13.

to a logic low

or CE, whichever

READ

The ACT-F128K32 has two control functions, both of
which must be logically active, to obtain data at the
outputs. Chip Enable (CE

) is the power control and
should be used for device selection. Output-Enable (OE
is the output control and should be used to gate data to
the output pins of the chip selected. Figure 7 illustrates
AC read timing waveforms.

OUTPUT DISABLE

With Output-Enable at a logic high level (VIH), output from
the device is disabled. Output pins are placed in a high
impedance state.

STANDBY MODE

The ACT-F128K32 has two standby modes, a CMOS
standby mode (CE

Operation CE OE WE A0 A1 A9 I/O

READ
STANDBY
OUTPUT DISABLE
WRITE
ENABLE SECTOR

VERIFY SECTOR

input held at Vcc + 0.5V), where the

Table 1 – Bus Operations

0 A1 A9 DOUT

0 A1 A9 DIN

ID Code

PROTECT

PROTECT

L L H A

H X X X X X HIGH Z

L H H X X X HIGH Z
L H L A

L V

ID L X X VID X

L L H L H V

Command Definitions

Device operations are selected by writing specific
address and data sequences into the command register.

)

Table 3 defines these register command sequences.

READ/RESET COMMAND

The read or reset operation is initiated by writing the
read/reset command sequence into the command
register. Microprocessor read cycles retrieve array data
from the memory. The device remains enabled for reads
until the command register contents are altered.

The device will automatically power-up in the read/reset
state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles will
retrieve array data. The device will automatically
power-up in the read/reset state. In this case, a command
sequence is not required to read data. Standard
Microprocessor read cycles will retrieve array data. This

Table 2 – Sector Addresses Table

A16 A15 A14 Address Range

SA0 0 0 0 00000h – 03FFFh
SA1 0 0 1 04000h – 07FFFh
SA2 0 1 0 08000h – 0BFFFh
SA3 0 1 1 0C000h – 0FFFFh
SA4 1 0 0 10000h – 13FFFh
SA5 1 0 1 14000h – 17FFFh
SA6 1 1 0 18000h – 1BFFFh
SA7 1 1 1 1C000h – 1FFFFh

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Table 3 — Commands Definitions

Bus

First Bus Write

Command
Sequence

Read/Reset 4 5555H AAH 2AAAH 55H 5555H F0H RA RD
Byte Program 6 5555H AAH 2AAAH 55H 5555H A0H PA PD
Chip Erase 6 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H
Sector Erase 6 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SA 30H

NOTES:

1. Address bit A15 = X = Don't Care. Write Sequences may be initiated with A15 in either state.

2. Address bit A16 = X = Don't Care for all address commands except for Program Address (PA) and Sector Address (SA).

3. RA = Address of the memory location to be read
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE
SA = Address of the sector to be erased. The combination of A16, A15, A14 will uniquely select any sector.

4. RD = Data read from location RA during read Operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE

Write
Cycle

Req’d

Cycle

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

default value ensures that no spurious alteration of the
memory content occurs during the power transition.
Refer to the AC Read Characteristics and Figure 7 for the
specific timing parameters.

Second Bus Write

Cycle

Third Bus Write

Cycle

.

CHIP ERASE

Chip erase is a six bus cycle operation. There are two
'unlock' write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are

Fourth Bus
Read/Write

Cycle

pulse.

Fifth Bus Write

Cycle

Sixth Bus Write

Cycle

then followed by the chip erase command.

BYTE PROGRAMING

The device is programmed on a byte-byte basis.
Programming is a four bus cycle operation. There are
two "unlock" write cycles. These are followed by the
program set-up command and data write cycles.
Addresses are latched on the falling edge of CE
whichever occurs later, while the data is latched on the
rising edge of CE
rising edge of CE

or WE whichever occurs first. The

or WE (whichever happens first) begins
programming using the Embedded Program Algorithm.
Upon executing the program algorithm command
sequence the system is not required to provide further
controls or timings. The device will automatically provide
adequate internally generated program pulses and verify

or WE,

Chip erase does not require the user to program the
device prior to erase. Upon executing the Embedded
Erase Algorithm command sequence (Figure 4) the
device will automatically program and verify the entire
memory for an all zero data pattem prior to electrical
erase. The erase is performed concurrently on all sectors
at the same time . The system is not required to provide
any controls or timings during these operations. Note:

Post Erase data state is all "1"s.

The automatic erase begins on the rising edge of the last

pulse in the command sequence and terminates

WE
when the data on D7 is "1" (see Write Operation Status
section - Table 3) at which time the device retums to read
mode. See Figures 4 and9.

the programmed cell.
The automatic programming operation is completed

when the data on D

7 (also used as Data Polling) is

equivalent to data written to this bit at which time the
device returns to the read mode and addresses are no
longer latched. Therefore, the device requires that a valid
address be supplied by the system at this particular
instance of time for Data

Polling operations. Data Polling
must be performed at the memory location which is being
programmed.

Any commands written to the chip during the Embedded
Program Algorithm will be ignored.

Programming is allowed in any sequence and across
sector boundaries. Beware that a data "0" cannot be
programmed back to a “1". Attempting to do so may
cause the device to exceed programming time limits (D5
= 1) or result in an apparent success, according to the
data polling algorithm, but a read from reset/read mode
will show that the data is still “0". Only erase operations
can convert “0"s to “1"s.

Figure 3 illustrates the programming algorithm using
typical command strings and bus operations.

SECTOR ERASE

Sector erase is a six bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"setup" command. Two more "unlock" write cycles are
then followed by the sector erase command. The sector
address (any address location within the desired sector)
is latched on the falling edge of WE
(30H) is latched on the rising edge of WE
time-out of 80µs from the rising edge of the last sector
erase command, the sector erase operation will begin.

Multiple sectors may be erased concurrently by writing
the six bus cycle operations as described above. This
sequence is followed with writes of the sector erase
command to addresses in other sectors desired to be
concurrently erased. The time between writes must be
less than 80µs otherwise that command will not be
accepted and erasure will start. It is recommended that
processor interrupts be disabled during this time to
guarantee this condition. The interrupts can be
re-enabled after the last Sector Erase command is
written. A time-out of 80µs from the rising edge of the
last WE

will initiate the execution of the Sector Erase

, while the command

command(s). If another falling edge of the WE

. After a

occurs

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