ACT ACT5101-1 Datasheet

Features

ACT5101-1 HIGH VOLTAGE 3-PHASE

BRUSHLESS DC MOTOR DRIVE

• 500 VDC RATING

• 40 AMP CONTINUOUS CURRENT (UP TO 85

°°°°

C)

• PACKAGE SIZE 3.0" X 2.1" X 0.39"

• 4 QUADRANT CONTROL

• 6 STEP TRAPEZOIDAL DRIVE CAPABILITY

• MILITARY PROCESSING AVAILABLE

• MIL-PRF-38534 COMPLIANT CIRCUITS
AVAILABLE

• ISOLATED UPPER AND LOWER GATE DRIVERS

• FULL MILITARY (-55°C TO +125°C) TEMPERATURE
RANGE

+15V

DC / AC

Converter

Optical

Isolation

To Other Sections

XFMR

&

Rect

XFMR

&

Rect

FIGURE 1 – BLOCK DIAGRAM

Phase V+

Phase OUT

Phase RTN

SD

Ux

Lx

+15V

+15V

+15V

+15V

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General Description

The ACT5101-1 high voltage 3
phase brushless DC motor drive
combines a 500 VDC, 40A high
power output stage along with
low power digital input and gate
drive stages. A digital lock-out
feature protects the output stage
from accidental cross-conduction
thus preventing shoot-through
conditions. The ACT5101-1 also
includes a floating gate drive
design for each upper and lower
transistor. On-board gate drive
supplies provide a continuous
floating voltage for each upper
and lower transistor, even during a
motor stall.

The high power output stage
rated at 500 VDC, 40A is capable
of delivering over 20 kW to the
load even after derating. This is
accomplished through the use of
high power IGBTS with ultra-fast
recovery rectifiers in parallel.

The ACT5101-1 utilizes power
hybrid technology to provide the
highest levels of reliability and
lightest weight while requiring the
smallest amount of board space.
The ACT5101-1 is available with
military processing and operates
over the full -55 to +125 degrees C
temperature range.

This makes the ACT5101-1 ideal for
all military, space,and commercial
avionics' applications. These incl­ude electro-hydrostatic actuators
[EHA's] and electro-mechanical
actuators [EMA's] for flight surface
control, missile fin actuators, thrust
vector control, electric brakes,
fuel and cooling pumps.

eroflex Circuit T

echnology

– Motor Driver Modules For The Future © SCD5101-1 REV D 5/14/01

Additional applications include environmental conditioning blowers, radar positioning, solar panel
positioning, and cryogenic cooler pumps. The ACT5101-1 is therefore especially suitable for use in
applications for all military tank upgrades, helicopters, planes and new commercial avionics using 270 VDC
as the main power.

Ux INPUTS

LX INPUTS

PHASE
OUTPUTS

SD

50%

50%

90%

50%

10%

td on

td off td off

t

r

50%

t

f

td on

t

r

t

f

t

SDU

H

UPPER TRANSISTOR
BEING SHUTDOWN

LOWER TRANSISTOR
BEING SHUTDOWN

PHASE
OUTPUTS

Z

t

SDL

Z

L

FIGURE 2 – TIMING DIAGRAM

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Table I – Absolute Maximums

(TC = +25°C unless otherwise specified)

PARAMETER SYMBOL RANGE UNITS

SUPPLY VOLTAGE (PINS 3,7,11) V+A,V+B,V+C 500 V DC

+15 V SUPPLY (PIN 12) +15V 18 V DC

OUTPUT CURRENT

CONTINUOUS lo 40 A

PULSED l

CASE OPERATING TEMPERATURE T

CASE STORAGE TEMPERATURE RANGE T

JUNCTION TEMPERATURE T

op

C

CS

J

60 A

-55 to +125

-55 to 150

150

Table II – Normal Operating Conditions

(TC = +25°C unless otherwise specified)

PAR AM ET ER S S YMB OL

POWER OUTPUT STAGE

Output Current Continuous l

o

Supply Voltage V+A,V+B,V+C 15 270 500 V DC

Output Voltage Drop (each IGBT) V

Instantaneous Forward Voltage

CE(SAT)

V

F

(flyback diode)

TEST

CONDITIONS

MIN TYP MAX UNIT

40 A

lo = 40A 3.4 V DC

lop = 40A

2.4 V DC

(See Note 1)

°

C

°

C

°

C

Reverse Recovery Time (flyback diode) t

rr

35 nsec

Reverse Leakage Current at Tc=25° ClrSee Note 2 0.25 mA

Reverse Leakage Current at Tc=125

Cl

r

8mA

°

LOGIC INPUT SIGNALS (INTERNALLY PULLED UP) (V+ = 15V)

Input Voltage Low V

Input Voltage High V

Input Current Low I

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INL

INH

INH

6.8 V DC

4V DC

3.75 mA

Table II – Normal Operating Conditions (Continued)

(TC = +25°C unless otherwise specified)

PAR AM ET ER S S YMB OL

SWITCHING CHARACTERISTICS

Upper Drive:

Turn-on propagation delay t

Turn-off propagation delay t

Shut-down propagation delay t

Turn-on Transition Time t

Turn-off Transition Time t

(on) 700 nsec

d

(off) 2 µsec

d

SDU

r

f

Lower Drive:

Turn-on propagation delay t

Turn-off propagation delay t

Shut-down propagation delay t

Turn-on Transition Time t

Turn-off Transition Time t

(on) 600 nsec

d

(off) 2 µsec

d

SDL

r

f

TEST

CONDITIONS

MIN TYP MAX UNIT

3.5 µsec

100 nsec

250 nsec

3.5 µsec

250 nsec

200 nsec

SWITCHING ENERGY LOSSES (At I = 40A, V = 480V)

Turn-on Energy

Turn-off Energy

DEAD TIME t

THERMAL

Junction-Case Thermal Resistance (IGBT)

Junction-Case Thermal Resistance (DIODE)

θ

θ

jcDIODE

Maximum Lead Soldering Temp T

Junction Temperature Range T

Case Operating Temperature T

Case Storage Temperature T

NOTES:

≤

1. Pulse width

300 usec duty cycle ≤2%

2. V+ = 480 V, Inputs = logic "1"

3. Solder 1/8" from case for 5 seconds maximum

E

on

E

off

dt

jcIGBT

S

J

C

cs

Tc = +125°C4 mJ

6mJ

500 nsec

each transistor .45

each diode .85

See Note 3 250

-55 150

-55 125

-55 150

°

C/W

°

C/W

°

°

°

°

C

C

C

C

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