Ace ACE632EM Schematics

ACE632

N&P Pair Enhancement Mode MOSFET

Description

The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching, low in-line power loss, and resistance to transients are
needed.

Features

• N-Channel

20V/0.95A,R
20V/0.75A,R
20V/0.65A,R

=380mΩ@V

DS(ON)

=450mΩ@V

DS(ON)

=800mΩ@V

DS(ON)

=4.5V

GS

=2.5V

GS

=1.8V

GS

• P-Channel

-20V/1.0A,R

-20V/0.8A,R

-20V/0.7A,R

= 520mΩ@V

DS(ON)

= 700mΩ@V

DS(ON)

= 950mΩ@V

DS(ON)

=-4.5V

GS

=-2.5V

GS

=-1.8V

GS

• Super high density cell design for extremely low RDS(ON)

• Exceptional on-resistance and maximum DC current capability

Application

• Power Management in Note book

• Portable Equipment

• Battery Powered System

• DC/DC Converter

• Load Switch

• DSC

• LCD Display inverter

VER 1.4 1

Thermal Resistance
Steady State

SOT-363

Description

1

Source 1

3

Drain 2

4

Source 2

5

Gate 2

6

Drain 1

Halogen - free

ACE632

N&P Pair Enhancement Mode MOSFET

Absolute Maximum Ratings

(TA=25℃ Unless otherwise noted)

Parameter Symbol

N-Channel P-Channel

Drain-Source Voltage VDS 20 -20 V

Gate-Source Voltage VGS ±12 ±12 V

Continuous Drain Current (TJ=150℃)

A

TA=80℃ 0.9 -0.7

I

D

=25℃

T

Pulsed Drain Current1) IDM 4 -3 A

Continuous Source Current (Diode Conduction) IS 0.6 -0.6

Power Dissipation

A

TA=70℃ 0.19

P

D

=25℃

T

Operating Junction T emperature TJ -55 to 150

Storage Temperature Range T

-55 to 150

STG

T≦10sec

-Junction to Ambient

R

θJA

Typical

1.2 -1.0

0.3

360 360
400 400

Unit

A

W

O

C

O

C

O

C/W

Packaging Type

SOT-363

6 5 4

2 Gate 1

1 2 3

N-Channel P-Channel

Ordering information

ACE632 EM + H

Pb - free
EM : SOT363

VER 1.4 2

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

ACE632

N&P Pair Enhancement Mode MOSFET
Electrical Characteristics

Static

V

=0V, ID=250uA N-Ch 20

Drain-Source Break do wn Voltage V

Drain-Source On Resistance R

Gate Threshold Volt age V

Gate Leakage Current I

(BR)DSS

DS(ON)

GS(th)

GSS

GS

VGS=0V, ID=250uA P-Ch -20

V

=4.5V, ID=0.95A N-Ch 0.26 0.38

GS

VGS=-4.5V, ID=-1.0A P-Ch 0.42 0.52
VGS=2.5V, ID=0.75A N-Ch 0.32 0.45
VGS=-2.5V, ID=-0.8A P-Ch 0.58 0.70
VGS=1.8V, ID=0.65A N-Ch 0.42 0.80
VGS=-1.8V, ID=-0.5A P-Ch 0.75 0.95
V

DS=VGS

, ID=250uA N-Ch 0.35 1.0

VDS=VGS, ID=-250uA P-Ch -0.35 -1.0

V

=0V, VGS=±12V N-Ch 100

DS

VDS=0V, VGS=±12V P-Ch -100

V

Ω

V

nA

Zero Gate Voltage Drain Current I

On-State Drain Current I

Diode Forward Voltage VSD

Forward Transconductance gfs

Total Gate Charge Qg

Gate-Source Charge Qgs

Gate-Drain Charge Qgd

DSS

D(ON)

V

=20V, VGS=0V N-Ch 1

DS

VDS=-20V, VGS=0V P-Ch -1

VDS=20V, VGS=0V TJ=55℃ N-Ch 5

VDS=-20V, VGS=0V TJ=55℃ P-Ch -5

V

≧4.5V, VGS =5V N-Ch 2

DS

VDS≦-4.5V, VGS =-5V P-Ch -2

I

=0.5A, VGS=0V N-Ch 0.8 1.2

S

IS=-0.5A, VGS=0V P-Ch -0.8 -1.2

V

=10V, ID=1.2A N-Ch 2.6

DS

VDS=-10V, ID=-1.0A P-Ch 1.5

Dynamic

N-Channel

V

=10V, VGS=4.5V,

DS

I

≡1.2A

D

P-Channel

V

=-10V, VGS=-4.5V,

DS

I

≡-1.0A

D

N-Ch 1.2 2.0
P-Ch 1.1 1.8
N-Ch 0.2
P-Ch 0.3
N-Ch 0.3
P-Ch 0.2

uA

A

V

S

nC

Turn-On Time

Turn-Off Time

t

d(on)

t

d(off)

tr

I

D

I

=-0.5A, V

D

tf

N-Channel

V

=10V,RL=20Ω

DD

=0.5A, V

P-Channel

V

=-10V,RL=20Ω

DD

=4.5V,RG=6Ω

GEN

=-4.5V, RG=6Ω

GEN

P-Ch 18 30
N-Ch 20 30
P-Ch 25 40

ns

N-Ch 25 40
P-Ch 20 30
N-Ch 12 20
P-Ch 12 20

VER 1.4 3

N-Ch 15 25