Zowie Technology Corporation
High Voltage Transistor
NPN Silicon
MMBTA42
1
2
1
2
3
3
SOT-23
Rating
Unit
Characteristic
Collector-Emitter Voltage Vdc
Collector-Base Voltage Vdc
Emitter-Base Voltage Vdc
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
300
300
6.0
500 mAdc
Characteristic
Total Device Dissipation FR-5 Board
(1)
TA=25
o
C
Derate above 25
o
C
Total Device Dissipation Alumina Substrate,
(2)
TA=25
o
C
Derate above 25
o
C
Thermal Resistance Junction to Ambient
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Emitter - Base Breakdowe Voltage
( IE= 100 uAdc, IC=0 )
Emitter Cutoff Curretn
( VEB= 6.0 Vdc, IC=0 )
Collector-Emitter Breakdowe Voltage
(3)
( IC= 1.0mAdc, IB=0 )
Unit
Vdc
Collector-Base Breakdowe Voltage
( IC= 100uAdc, IE=0 )
Vdc
Vdc
uAdc
Collector Cutoff Current
( VCE= 200 Vdc, IE = 0 )
Symbol
V(BR)EBO
V(BR)CEO
IEBO
V(BR)CBO
ICBO
Min.
6.0
300
-
300
-
Max.
-
-
0.1
-
0.1 uAdc
MMBTA42=1D
Max.
225
1.8
300
2.4
556
417
-55 to +150
Unit
mW
mW /
o
C
mW
mW /
o
C
o
C / W
o
C / W
o
C
Symbol
PD
PD
R
JA
R
JA
TJ,TSTG
Zowie Technology CorporationREV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0
x
0.75
x
0.062in.
(2) Alumina=0.4
x
0.3
x
0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.