ZOWIE MMBD6050 Datasheet

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Zowie Technology Corporation
Switching Diode
3
MMBD6050
1
SOT-23
2
3
ANODECATHODE
MAXIMUM RATINGS
Rating
Symbol Reverse Voltage VR 70 Vdc Peak Forward Current IF 200 mAdc Peak Forward Surge Current IFM( surge ) 500 mAdc
Value
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
TA=25oC
Derate above 25oC Thermal Resistance, Junction to Ambient 556 Total Device Dissipation Alumina Substrate,
(2)
TA=25oC
Derate above 25oC Thermal Resistance, Junction to Ambient 417
Symbol
PD
R
JA
PD
JA
Junction and Storage Temperature
Max.
225
1.8
300
2.4
-55 to +150
mW / oC
o
C / W
mW
mW / oC
o
C / WR
DEVICE MARKING
MMBD6050=5A
1
o
CTJ,TSTG
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol Min.
OFF CHARACTERISTICS
Reverse Breakdown Voltage ( IBR=100uAdc )
Forward Voltage
Diode Capacitance ( VR=0, f=1.0MHZ )
Reverse Recovery Time ( IF=IR=10 mAdc,
(1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
IR(REC)=1.0mA
dc )
( IF=1.0 mAdc ) ( IF=100 mAdc )
V(BR) 70 - Vdc
VF
IR
CJ - 2.5 pF
trr - 4.0 nS
550 850
-
-
Max.
700
1100
0.1 uAdcReverse Voltage Leakage Current (VR=50 Vdc )
Unit
mVdc
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