ZOWIE BC846A, BC846B Datasheet

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Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
BASE
1
COLLECTOR
3
2
EMITTER
BC846A,B
3
1
2
SOT-23
MAXIMUM RATINGS
Rating
Symbol Collector-Emitter Voltage VCEO 65 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 100 mAdc
Unit
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
TA=25oC
Derate above 25oC Thermal Resistance Junction to Ambient 556 Total Device Dissipation Alumina Substrate,
(2)
TA=25oC
Derate above 25oC Thermal Resistance Junction to Ambient 417
Symbol
PD
R
JA
PD
JA
Junction and Storage Temperature
Max.
225
1.8
300
2.4
-55 to +150
Unit mW
mW / oC
o
C / W
mW
mW / oC
o
C / WR
o
CTJ,TSTG
DEVICE MARKING
BC846A = 1A,BC846B = 1B
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage ( IC=10mAdc )
Collector-Emitter Breakdowe Voltage ( IC=10 uAdc, VEB=0 )
Collector-Base Breakdowe Voltage ( IC=10 uAdc )
Emitter-Base Breakdowe Voltage ( IE=1.0 uA )
Collector Cutoff Current ( VCB=30 V ) ( VCB=30 V, TA = 150oC )
(1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
Min.
65
80
80
6.0
-
-
Typ.
-
-
-
-
-
-
Max.
-
-
-
-
15
5.0
Unit
Vdc
Vdc
Vdc
Vdc
nAdc uAdc
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