ZXTP25100BFH
100V, SOT23, PNP medium power transistor
Summary
BV(BR)CEX > -140V, BV(BR)CEO > -100V
BV(BR)ECX > -7V ;
IC(cont) = -2A
VCE(sat) < -130mV @ -1A
RCE(sat) = 108m typical
PD = 1.25W
Complementary part number ZXTN25100BFH
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
Features
•High power dissipation SOT23 package
•High peak current
•Low saturation voltage
•140V forward blocking voltaget
•7V reverse blocking voltage
Applications
•MOSFET and IGBT gate driving
•DC - DC converters
•Motor drive
•Relay, lamp, and solenoid drive
Ordering information
Device |
Reel size |
Tape width |
Quantity per reel |
|
(inches) |
|
|
|
|
|
|
ZXTP25100BFHTA |
7 |
8mm |
3,000 |
|
|
|
|
Device marking
056
C
B
E
Pinout - top view
Issue 1 - March 2006 |
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© Zetex Semiconductors plc 2006
ZXTP25100BFH
Absolute maximum ratings
Parameter |
|
Symbol |
Limit |
Unit |
|
|
|
|
|
Collector-base voltage |
|
VCBO |
-140 |
V |
Collector-emitter voltage (forward blocking) |
VCEX |
-140 |
V |
|
Collector-emitter voltage |
VCEO |
-100 |
V |
|
Emitter-collector voltage (reverse blocking) |
VECX |
-7 |
V |
|
Emitter-base voltage |
|
VEBO |
-7 |
V |
Continuous collector current (b) |
IC |
-2 |
A |
|
Peak pulse current |
|
ICM |
-5 |
A |
Power dissipation at T |
=25°C (a) |
PD |
0.73 |
W |
A |
|
|
5.84 |
mW/°C |
Linear derating factor |
|
|
||
|
|
|
|
|
|
|
|
|
|
Power dissipation at T |
=25°C (b) |
PD |
1.05 |
W |
A |
|
|
8.4 |
mW/°C |
Linear derating factor |
|
|
||
|
|
|
|
|
|
|
|
|
|
Power dissipation at T |
=25°C (c) |
PD |
1.25 |
W |
A |
|
|
9.6 |
mW/°C |
Linear derating factor |
|
|
||
|
|
|
|
|
|
|
|
|
|
Power dissipation at T |
=25°C (d) |
PD |
1.81 |
W |
A |
|
|
14.5 |
mW/°C |
Linear derating factor |
|
|
||
|
|
|
|
|
|
|
|
|
|
Operating and storage temperature range |
Tj, Tstg |
-55 to 150 |
°C |
Thermal resistance
Parameter |
Symbol |
Limit |
Unit |
|
|
|
|
Junction to ambient (a) |
R JA |
171 |
°C/W |
Junction to ambient (b) |
R JA |
119 |
°C/W |
Junction to ambient (c) |
R JA |
100 |
°C/W |
Junction to ambient (d) |
R JA |
69 |
°C/W |
NOTES:
(a)For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c)Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d)As (c) above measured at t<5secs.
Issue 1 - March 2006 |
2 |
www.zetex.com |
© Zetex Semiconductors plc 2006
ZXTP25100BFH
Characteristics
Issue 1 - March 2006 |
3 |
www.zetex.com |
© Zetex Semiconductors plc 2006