Zetex (Now Diodes) ZXTP25100BFH Schematic [ru]

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ZXTP25100BFH

100V, SOT23, PNP medium power transistor

Summary

BV(BR)CEX > -140V, BV(BR)CEO > -100V

BV(BR)ECX > -7V ;

IC(cont) = -2A

VCE(sat) < -130mV @ -1A

RCE(sat) = 108m typical

PD = 1.25W

Complementary part number ZXTN25100BFH

Description

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Features

High power dissipation SOT23 package

High peak current

Low saturation voltage

140V forward blocking voltaget

7V reverse blocking voltage

Applications

MOSFET and IGBT gate driving

DC - DC converters

Motor drive

Relay, lamp, and solenoid drive

Ordering information

Device

Reel size

Tape width

Quantity per reel

 

(inches)

 

 

 

 

 

 

ZXTP25100BFHTA

7

8mm

3,000

 

 

 

 

Device marking

056

C

B

E

Pinout - top view

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ZXTP25100BFH

Absolute maximum ratings

Parameter

 

Symbol

Limit

Unit

 

 

 

 

 

Collector-base voltage

 

VCBO

-140

V

Collector-emitter voltage (forward blocking)

VCEX

-140

V

Collector-emitter voltage

VCEO

-100

V

Emitter-collector voltage (reverse blocking)

VECX

-7

V

Emitter-base voltage

 

VEBO

-7

V

Continuous collector current (b)

IC

-2

A

Peak pulse current

 

ICM

-5

A

Power dissipation at T

=25°C (a)

PD

0.73

W

A

 

 

5.84

mW/°C

Linear derating factor

 

 

 

 

 

 

 

 

 

 

 

Power dissipation at T

=25°C (b)

PD

1.05

W

A

 

 

8.4

mW/°C

Linear derating factor

 

 

 

 

 

 

 

 

 

 

 

Power dissipation at T

=25°C (c)

PD

1.25

W

A

 

 

9.6

mW/°C

Linear derating factor

 

 

 

 

 

 

 

 

 

 

 

Power dissipation at T

=25°C (d)

PD

1.81

W

A

 

 

14.5

mW/°C

Linear derating factor

 

 

 

 

 

 

 

 

 

 

Operating and storage temperature range

Tj, Tstg

-55 to 150

°C

Thermal resistance

Parameter

Symbol

Limit

Unit

 

 

 

 

Junction to ambient (a)

R JA

171

°C/W

Junction to ambient (b)

R JA

119

°C/W

Junction to ambient (c)

R JA

100

°C/W

Junction to ambient (d)

R JA

69

°C/W

NOTES:

(a)For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.

(c)Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.

(d)As (c) above measured at t<5secs.

Issue 1 - March 2006

2

www.zetex.com

© Zetex Semiconductors plc 2006

ZXTP25100BFH

Characteristics

Issue 1 - March 2006

3

www.zetex.com

© Zetex Semiconductors plc 2006

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