Zetex (Now Diodes) ZXTP19020DFFTA Schematic [ru]

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ZXTP19020DFF

20V, SOT23F, PNP medium power transistor

Summary

BVCEO > -20V

BVECO > -4V

IC(cont) = 5.5A

VCE(sat) < 44mV @ 1A

RCE(sat) = 26m

PD = 1.5W

Complementary part number: ZXTN19020DFF

Description

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium

Features

High power dissipation SOT23 package

15A peak current

Guaranteed gain at a collector current of 10A

Very low saturation voltage

Applications

MOSFET and IGBT gate driving

Power switches

Motor control

Ordering information

Device

Reel size

Tape width

Quantity per

 

(inches)

 

reel

 

 

 

 

ZXTP19020DFFTA

7

8

3000

 

 

 

 

Device marking

1D8

C

B

E

E

C

B Pinout - top view

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ZXTP19020DFF

Absolute maximum ratings

Parameter

 

Symbol

Limit

Unit

 

 

 

 

 

Collector-base voltage

 

VCBO

-25

V

Collector-emitter voltage

 

VCEO

-20

V

Emitter-collector voltage (reverse blocking)

VECO

-4

V

Emitter-base voltage

 

VEBO

-7

V

Continuous collector current(c)

IC

-5.5

A

Peak pulse current

 

ICM

-15

A

Base current

 

IB

-1

A

Power dissipation at T

= 25°C(a)

PD

0.84

W

amb

 

 

 

 

Linear derating factor

 

 

6.72

mW/°C

 

 

 

 

 

Power dissipation at T

= 25°C(b)

PD

1.34

W

amb

 

 

 

 

Linear derating factor

 

 

10.72

mW/°C

 

 

 

 

 

Power dissipation at T

= 25°C(c)

PD

1.5

W

amb

 

 

 

 

Linear derating factor

 

 

12

mW/°C

 

 

 

 

 

Power dissipation at T

= 25°C(d)

PD

2

W

amb

 

 

 

 

linear derating factor

 

 

16

mW/°C

 

 

 

 

Operating and storage temperature range

Tj, Tstg

-55 to 150

°C

Thermal resistance

Parameter

Symbol

Value

Unit

 

 

 

 

Junction to ambient(a)

R JA

149.3

°C/W

Junction to ambient(b)

R JA

93.4

°C/W

Junction to ambient(c)

R JA

83.3

°C/W

Junction to ambient(d)

R JA

60

°C/W

Junction to case(e)

R JC

38

°C/W

NOTES:

(a)For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.

(c)Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.

(d)As (c) above measured at t<5secs

(e)Junction to case from collector tab

Issue 1 - September 2007

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© Zetex Semiconductors plc 2007

ZXTP19020DFF

Characteristics

Issue 1 - September 2007

3

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© Zetex Semiconductors plc 2007

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