Zetex (Now Diodes) ZXTN25040DFH Schematic [ru]

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ZXTN25040DFH

40V, SOT23, NPN medium power transistor

Summary

BVCEX > 130V

BVCEO > 40V

BVECO > 6V

IC(cont) = 4A

VCE(sat) < 55 mV @ 1A

RCE(sat) = 35 m

PD = 1.25W

Complementary part number ZXTP25040DFH

Description

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Features

High power dissipation SOT23 package

High peak current

High gain

Low saturation voltage

130V forward blocking voltage

6V reverse blocking voltage

Applications

MOSFET gate drivers

Power switches

Motor control

DC fans

DC-DC converters

Ordering information

Device

Reel size

Tape width

Quantity per

 

(inches)

(mm)

reel

 

 

 

 

ZXTN25040DFHTA

7

8

3,000

 

 

 

 

Device marking

 

 

 

1A4

 

 

 

C

B

E

E

C

B Pinout - top view

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© Zetex Semiconductors plc 2006

ZXTN25040DFH

Absolute maximum ratings

Parameter

 

Symbol

Limit

Unit

 

 

 

 

 

Collector-base voltage

 

VCBO

130

V

Collector-emitter voltage (forward blocking)

VCEX

130

V

Collector-emitter voltage

 

VCEO

40

V

Emitter-collector voltage (reverse blocking)

VECO

6

V

Emitter-base voltage

 

VEBO

7

V

Continuous collector current(c)

IC

4

A

Base current

 

IB

1

A

 

 

 

 

 

Peak pulse current

 

ICM

10

A

Power dissipation at Tamb = 25°C(a)

P

0.73

W

Linear derating factor

 

 

5.84

mW/°C

 

 

 

 

 

Power dissipation at T

= 25°C(b)

PD

1.05

W

amb

 

 

 

 

Linear derating factor

 

 

8.4

mW/°C

 

 

 

 

 

Power dissipation at T

= 25°C(c)

PD

1.25

W

amb

 

 

 

 

Linear derating factor

 

 

9.6

mW/°C

 

 

 

 

 

Power dissipation at T

= 25°C(d)

PD

1.81

W

amb

 

 

 

 

Linear derating factor

 

 

14.5

mW/°C

 

 

 

 

Operating and storage temperature range

Tj, Tstg

- 55 to 150

°C

Thermal resistance

Parameter

Symbol

Limit

Unit

 

 

 

 

Junction to ambient(a)

R JA

171

°C/W

Junction to ambient(b)

R JA

119

°C/W

Junction to ambient(c)

R JA

100

°C/W

Junction to ambient(d)

R JA

69

°C/W

NOTES:

(a)For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.

(c)Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.

(d)As (c) above measured at t<5secs.

Issue 1 - June 2006

2

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© Zetex Semiconductors plc 2006

ZXTN25040DFH

Characteristics

Issue 1 - June 2006

3

www.zetex.com

© Zetex Semiconductors plc 2006

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