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ZXTN25020DFL
20V, SOT23, NPN low power transistor
Summary
BVCEX > 100V
BVCEO > 20V
BVECO > 5V
IC(cont) = 2A
ICM = 8A
VCE(sat) < 70mV @ 1A
RCE(sat) = 55m
PD = 350mW
Complementary part number ZXTP25020DFL
Description |
C |
|
Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.
Features
•High peak current
•Low saturation voltage
•100V forward blocking voltage
Applications
•MOSFET and IGBT gate driving
•DC-DC conversion
•LED driving
•Interface between low voltage IC's and loads
Ordering information
Device |
Reel size |
Tape width |
Quantity per reel |
|
(inches) |
(mm) |
|
|
|
|
|
ZXTN25020DFLTA |
7 |
8 |
3,000 |
|
|
|
|
Device marking
1A1
B
E
E
C
B Pinout - top view
Issue 4 - January 2007 |
1 |
www.zetex.com |
© Zetex Semiconductors plc 2007
ZXTN25020DFL
Absolute maximum ratings
Parameter |
|
Symbol |
Limit |
Unit |
|
|
|
|
|
Collector-base voltage |
|
VCBO |
100 |
V |
Collector-emitter voltage (forward blocking) |
VCEX |
100 |
V |
|
Collector-emitter voltage |
|
VCEO |
20 |
V |
Emitter-collector voltage (reverse blocking) |
VECO |
5 |
V |
|
Emitter-base voltage |
|
VEBO |
7 |
V |
Continuous collector current(a) |
IC |
2 |
A |
|
Base current |
|
IB |
500 |
mA |
|
|
|
|
|
Peak pulse current |
|
ICM |
8 |
A |
Power dissipation at T |
=25°C(a) |
PD |
350 |
mW |
amb |
|
|
|
|
Linear derating factor |
|
|
2.8 |
mW/°C |
|
|
|
|
|
Operating and storage temperature range |
Tj, Tstg |
-55 to 150 |
°C |
|
Thermal resistance
Parameter |
Symbol |
Limit |
Unit |
|
|
|
|
Junction to ambient(a) |
R JA |
357 |
°C/W |
NOTES:
(a)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
Issue 4 - January 2007 |
2 |
www.zetex.com |
© Zetex Semiconductors plc 2007
ZXTN25020DFL
Characteristics
Issue 4 - January 2007 |
3 |
www.zetex.com |
© Zetex Semiconductors plc 2007