Zetex (Now Diodes) ZXTN25020DFLTA Schematic [ru]

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ZXTN25020DFL

20V, SOT23, NPN low power transistor

Summary

BVCEX > 100V

BVCEO > 20V

BVECO > 5V

IC(cont) = 2A

ICM = 8A

VCE(sat) < 70mV @ 1A

RCE(sat) = 55m

PD = 350mW

Complementary part number ZXTP25020DFL

Description

C

 

Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

Features

High peak current

Low saturation voltage

100V forward blocking voltage

Applications

MOSFET and IGBT gate driving

DC-DC conversion

LED driving

Interface between low voltage IC's and loads

Ordering information

Device

Reel size

Tape width

Quantity per reel

 

(inches)

(mm)

 

 

 

 

 

ZXTN25020DFLTA

7

8

3,000

 

 

 

 

Device marking

1A1

B

E

E

C

B Pinout - top view

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© Zetex Semiconductors plc 2007

ZXTN25020DFL

Absolute maximum ratings

Parameter

 

Symbol

Limit

Unit

 

 

 

 

 

Collector-base voltage

 

VCBO

100

V

Collector-emitter voltage (forward blocking)

VCEX

100

V

Collector-emitter voltage

 

VCEO

20

V

Emitter-collector voltage (reverse blocking)

VECO

5

V

Emitter-base voltage

 

VEBO

7

V

Continuous collector current(a)

IC

2

A

Base current

 

IB

500

mA

 

 

 

 

 

Peak pulse current

 

ICM

8

A

Power dissipation at T

=25°C(a)

PD

350

mW

amb

 

 

 

 

Linear derating factor

 

 

2.8

mW/°C

 

 

 

 

Operating and storage temperature range

Tj, Tstg

-55 to 150

°C

Thermal resistance

Parameter

Symbol

Limit

Unit

 

 

 

 

Junction to ambient(a)

R JA

357

°C/W

NOTES:

(a)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

Issue 4 - January 2007

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© Zetex Semiconductors plc 2007

ZXTN25020DFL

Characteristics

Issue 4 - January 2007

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© Zetex Semiconductors plc 2007

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