Zetex (Now Diodes) ZXTN25012EFHTA Schematic [ru]

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ZXTN25012EFH

12V, SOT23, NPN medium power transistor

Summary

BVCEO > 12V

BVECX > 6V

hFE > 500

IC(cont) = 6A

VCE(sat) < 32mV @ 1A

RCE(sat) = 23m

PD = 1.25W

Description

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Features

High power dissipation SOT23 package

High peak current

Very high gain

Low saturation voltage

6V reverse blocking voltage

Applications

MOSFET gate drivers

Power switches

Motor control

DC fans

DC-DC converters

Ordering information

C

B

E

E

C

B Pinout - top view

Device

Reel size

Tape width

Quantity per reel

 

(inches)

(mm)

 

 

 

 

 

ZXTN25012EFHTA

7

8

3,000

 

 

 

 

Device marking

1C3

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© Zetex Semiconductors plc 2008

ZXTN25012EFH

Absolute maximum ratings

Parameter

 

Symbol

Limit

Unit

 

 

 

 

 

Collector-base voltage

 

VCBO

20

V

Collector-emitter voltage

 

VCEO

12

V

Emitter-collector voltage (reverse blocking)

VECX

6

V

Emitter-base voltage

 

VEBO

7

V

Continuous collector current(c)

IC

6

A

Base current

 

IB

1

A

 

 

 

 

 

Peak pulse current

 

ICM

15

A

Power dissipation at T

=25°C(a)

PD

0.73

W

amb

 

 

5.84

mW/°C

Linear derating factor

 

 

 

 

 

 

 

 

 

 

 

Power dissipation at T

=25°C(b)

PD

1.05

W

amb

 

 

8.4

mW/°C

Linear derating factor

 

 

 

 

 

 

 

 

 

 

 

Power dissipation at T

=25°C(c)

PD

1.25

W

amb

 

 

9.6

mW/°C

Linear derating factor

 

 

 

 

 

 

 

 

 

 

 

Power dissipation at T

=25°C(d)

PD

1.81

W

amb

 

 

14.5

mW/°C

Linear derating factor

 

 

 

 

 

 

 

 

 

 

Operating and storage temperature range

Tj, Tstg

- 55 to 150

°C

Thermal resistance

Parameter

Symbol

Limit

Unit

 

 

 

 

Junction to ambient(a)

R JA

171

°C/W

Junction to ambient(b)

R JA

119

°C/W

Junction to ambient(c)

R JA

100

°C/W

Junction to ambient(d)

R JA

69

°C/W

NOTES:

(a)For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.

(c)Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.

(d)As (c) above measured at t<5secs.

Issue 3 - March 2008

2

www.zetex.com

© Zetex Semiconductors plc 2008

ZXTN25012EFH

Characteristics

Issue 3 - March 2008

3

www.zetex.com

© Zetex Semiconductors plc 2008

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