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ZXTN25012EFH
12V, SOT23, NPN medium power transistor
Summary
BVCEO > 12V
BVECX > 6V
hFE > 500
IC(cont) = 6A
VCE(sat) < 32mV @ 1A
RCE(sat) = 23m
PD = 1.25W
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
Features
•High power dissipation SOT23 package
•High peak current
•Very high gain
•Low saturation voltage
•6V reverse blocking voltage
Applications
•MOSFET gate drivers
•Power switches
•Motor control
•DC fans
•DC-DC converters
Ordering information
C
B
E
E
C
B Pinout - top view
Device |
Reel size |
Tape width |
Quantity per reel |
|
(inches) |
(mm) |
|
|
|
|
|
ZXTN25012EFHTA |
7 |
8 |
3,000 |
|
|
|
|
Device marking
1C3
Issue 3 - March 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
ZXTN25012EFH
Absolute maximum ratings
Parameter |
|
Symbol |
Limit |
Unit |
|
|
|
|
|
Collector-base voltage |
|
VCBO |
20 |
V |
Collector-emitter voltage |
|
VCEO |
12 |
V |
Emitter-collector voltage (reverse blocking) |
VECX |
6 |
V |
|
Emitter-base voltage |
|
VEBO |
7 |
V |
Continuous collector current(c) |
IC |
6 |
A |
|
Base current |
|
IB |
1 |
A |
|
|
|
|
|
Peak pulse current |
|
ICM |
15 |
A |
Power dissipation at T |
=25°C(a) |
PD |
0.73 |
W |
amb |
|
|
5.84 |
mW/°C |
Linear derating factor |
|
|
||
|
|
|
|
|
|
|
|
|
|
Power dissipation at T |
=25°C(b) |
PD |
1.05 |
W |
amb |
|
|
8.4 |
mW/°C |
Linear derating factor |
|
|
||
|
|
|
|
|
|
|
|
|
|
Power dissipation at T |
=25°C(c) |
PD |
1.25 |
W |
amb |
|
|
9.6 |
mW/°C |
Linear derating factor |
|
|
||
|
|
|
|
|
|
|
|
|
|
Power dissipation at T |
=25°C(d) |
PD |
1.81 |
W |
amb |
|
|
14.5 |
mW/°C |
Linear derating factor |
|
|
||
|
|
|
|
|
|
|
|
|
|
Operating and storage temperature range |
Tj, Tstg |
- 55 to 150 |
°C |
|
Thermal resistance
Parameter |
Symbol |
Limit |
Unit |
|
|
|
|
Junction to ambient(a) |
R JA |
171 |
°C/W |
Junction to ambient(b) |
R JA |
119 |
°C/W |
Junction to ambient(c) |
R JA |
100 |
°C/W |
Junction to ambient(d) |
R JA |
69 |
°C/W |
NOTES:
(a)For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c)Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d)As (c) above measured at t<5secs.
Issue 3 - March 2008 |
2 |
www.zetex.com |
© Zetex Semiconductors plc 2008
ZXTN25012EFH
Characteristics
Issue 3 - March 2008 |
3 |
www.zetex.com |
© Zetex Semiconductors plc 2008