Zetex (Now Diodes) ZXTN2040F Schematic [ru]

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ZXTN2040F

SOT23 40 volt NPN silicon planar medium power transistor

Summary

V(BR)CEO > 40V

Ic(cont) = 1A

Vce(sat) < 500mV @ 1A

Complementary type

ZXTP2041F

Description

This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching.

Features

Low saturation voltage for reduced power dissipation

1 to 2 amp high current capability

Pb-free

SOT23 package

Applications

■ Power MOSFET gate driving

■ Low loss power switching

Ordering information

Device

Reel size

Tape width

Quantity per reel

Pin out - top view

 

 

 

 

ZXTN2040FTA

7”

8mm

3,000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ZXTN2040FTC

13”

8mm

10,000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Device marking

N40

Issue 2 - August 2005

1

www.zetex.com

© Zetex Semiconductors plc 2005

ZXTN2040F

Absolute maximum ratings

Parameter

 

Symbol

Limit

Unit

 

 

 

 

 

Collector-base voltage

 

VCBO

40

V

Collector-emitter voltage

VCEO

40

V

Emitter-base voltage

 

VEBO

5.0

V

Peak pulse current

 

ICM

2

A

Continuous collector current *

IC

1

A

Peak base current

 

IBM

1

A

Power dissipation @ T

=25°C*

PD

350

mW

A

 

 

 

 

Operating and storage temperature

Tj:Tstg

-55 to +150

°C

NOTES:

*For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

Issue 2 - August 2005

2

www.zetex.com

© Zetex Semiconductors plc 2005

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