Zetex (Now Diodes) ZXT11N15DF Schematic [ru]

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ZXT11N15DF

SuperSOT4™

15V NPN SILICON LOW SATURATION TRANSISTOR

SUMMARY

VCEO=15V; RSAT = 37m; IC= 3A

DESCRIPTION

 

This new 4th generation ultra low saturation transistor utilises the Zetex

 

matrix structure combined with advanced assembly techniques to give

SOT23

extremely low on state losses. This makes it ideal for high efficiency, low

voltage switching applications.

 

FEATURES

Extremely Low Equivalent On Resistance

Extremely Low Saturation Voltage

hFE characterised up to 5A

IC=3A Continuous Collector Current

SOT23 package

APPLICATIONS

DC - DC Converters

Power Management Functions

Power switches

 

 

 

E

Motor control

 

 

 

C

 

 

 

B

ORDERING INFORMATION

 

 

 

 

 

 

 

 

 

 

 

 

DEVICE

REEL SIZE

TAPE WIDTH

QUANTITY

Top View

 

 

(inches)

(mm)

PER REEL

 

 

 

 

 

 

 

 

ZXT11N15DFTA

7

8mm embossed

3000 units

 

 

 

 

 

 

 

 

ZXT11N15DFTC

13

8mm embossed

10000 units

 

 

 

 

 

 

 

DEVICE MARKING

1N5

ISSUE 1 - DECEMBER 1999

1

ZXT11N15DF

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

LIMIT

UNIT

 

 

 

 

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

15

V

Emitter-Base Voltage

VEBO

7.5

V

Peak Pulse Current

ICM

5

A

Continuous Collector Current

IC

3

A

 

 

 

 

Base Current

IB

500

mA

 

 

 

 

Power Dissipation at TA=25°C (a)

PD

625

mW

Linear Derating Factor

 

5

mW/°C

 

 

 

 

 

 

 

Power Dissipation at TA=25°C (b)

PD

806

mW

Linear Derating Factor

 

6.4

mW/°C

 

 

 

 

 

 

 

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Junction to Ambient (a)

RθJA

200

°C/W

Junction to Ambient (b)

RθJA

155

°C/W

NOTES

(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b)For a device surface mounted on FR4 PCB measured at t 5 secs.

ISSUE 1 - DECEMBER 1999

2

ZXT11N15DF

TYPICAL CHARACTERISTICS

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

(W)

0.6

 

 

 

 

 

 

 

 

(A)

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PowerDissipation

0.5

 

 

 

 

 

 

 

 

CollectorCurrent

DC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

1

1s

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

100ms

 

 

 

 

 

 

 

 

 

 

 

10ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

100m

1ms

 

 

 

 

 

 

 

 

 

 

 

 

100µs

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

Max

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

Single Pulse Tamb=25°C

 

 

0.0

0

20

40

60

80

100

120

140

10m

1

10

 

 

 

160

100m

 

 

 

 

 

 

Temperature (°C)

 

 

 

VCE Collector-Emitter Voltage (V)

 

 

 

 

 

 

Derating Curve

 

 

 

Safe Operating Area

 

 

225

 

 

 

 

 

 

 

 

 

 

 

 

(°C/W)

200

 

 

 

 

 

 

 

 

 

 

 

 

175

 

 

 

 

 

 

 

 

 

 

 

 

150

 

 

 

 

 

 

 

 

 

 

 

 

Resistance

 

 

 

 

 

 

 

 

 

 

 

 

125

D=0.5

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

75

D=0.2

 

 

 

Single Pulse

 

 

 

 

 

Thermal

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D=0.05

 

 

 

 

 

 

 

25

 

 

 

D=0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

1m

10m

100m

 

1

10

100

1k

 

 

 

 

 

100µ

 

 

 

 

 

 

 

 

 

Pulse Width (s)

 

 

 

 

 

 

 

 

 

 

Transient Thermal Impedance

 

 

 

 

ISSUE 1 - DECEMBER 1999

3

+ 4 hidden pages