Zetex (Now Diodes) ZXMP2120E5 Schematic [ru]

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ZXMP2120E5

200V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA

DESCRIPTION

This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits.

A 4 pin SOT223 version is also available (ZXMP2120G4).

FEATURES

High voltage

Low on-resistance

Fast switching speed

Low gate drive

Low threshold

SOT23-5 package variant engineered to increase spacing between high voltage pins.

APPLICATIONS

Active clamping of primary side MOSFETs in 48 volt DC-DC converters

ORDERING INFORMATION

DEVICE

REEL SIZE

TAPE WIDTH (mm)

QUANTITY

 

(inches)

 

PER REEL

 

 

 

 

ZXMP2120E5TA

7

8mm embossed

3,000 units

 

 

 

 

DEVICE MARKING

P120

SOT23-5

N/C

 

 

 

 

 

 

 

 

S

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

N/C

 

 

 

 

 

 

 

 

G

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PINOUT - TOP VIEW

ISSUE 2 - SEPTEMBER 2006

1

ZXMP2120E5

ABSOLUTE MAXIMUM RATINGS

PARAMETER

 

 

 

SYMBOL

LIMIT

UNIT

 

 

 

 

 

 

 

 

 

Drain-Source Voltage

 

 

 

VDSS

-200

 

V

Gate Source Voltage

 

 

 

VGS

±20

 

V

 

 

 

 

 

 

Continuous Drain Current (VGS=10V; Tamb=25°C)(a)

 

ID

-122

 

mA

Pulsed Drain Current (c)

 

 

 

IDM

-0.7

 

A

Pulsed Source Current (Body Diode)

(c)

 

ISM

-0.7

 

A

 

 

 

 

 

 

Power Dissipation at Tamb=25°C (a)

 

 

 

PD

0.75

 

W

Linear Derating Factor

 

 

 

 

 

6

 

mW/°C

 

 

 

 

 

 

 

 

Operating and Storage Temperature Range

 

Tj:Tstg

-55 to +150

°C

THERMAL RESISTANCE

 

 

 

 

 

 

 

 

PARAMETER

 

 

SYMBOL

 

VALUE

 

UNIT

 

 

 

 

 

 

 

 

Junction to Ambient (a)

 

 

Rθ JA

 

167

 

°C/W

NOTES

(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b)For a device surface mounted on FR4 PCB measured at t 5 secs.

(c)Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

ISSUE 2 - SEPTEMBER 2006

2

ZXMP2120E5

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

 

 

 

 

 

 

 

STATIC

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain-Source Breakdown Voltage

V(BR)DSS

-200

 

 

V

ID=-1mA, VGS=0V

Gate-Source Threshold Voltage

VGS(th)

-1.5

 

-3.5

V

I =-1mA, VDS= VGS

 

 

 

 

 

 

D

Gate-Body Leakage

IGSS

 

 

20

nA

VGS= 20V, VDS=0V

Zero Gate Voltage Drain Current

IDSS

 

 

-10

A

VDS=-200 V, VGS=0

 

 

 

 

-100

µA

VDS=-160 V, VGS=0V,

 

 

 

 

 

 

T=125°C (2)

On-State Drain Current(1)

ID(on)

-300

 

 

mA

VDS=-25 V, VGS=-10V

Static Drain-Source On-State Resistance (1)

RDS(on)

 

 

28

VGS=-10V, ID=-150mA

Forward Transconductance (1)(2)

gfs

50

 

 

mS

VDS=-25V,ID=-150mA

DYNAMIC

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Capacitance (2)

Ciss

 

 

100

pF

VDS=-25 V, VGS=0V,

Output Capacitance (2)

Coss

 

 

25

pF

 

 

f=1MHz

Reverse Transfer Capacitance (2)

Crss

 

 

7

pF

 

SWITCHING

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-On Delay Time (2) (3)

td(on)

 

 

7

ns

VDD =-25V, ID=-150mA

Rise Time (2)(3)

tr

 

 

15

ns

 

 

 

Turn-Off Delay Time (2) (3)

td(off)

 

 

12

ns

 

Fall Time (2)(3)

tf

 

 

15

ns

 

NOTES:

(1)Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.

(2)Sample test.

(3)Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.

ISSUE 2 - SEPTEMBER 2006

3

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