Zetex (Now Diodes) ZXMN3B14F Schematic [ru]

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ZXMN3B14F

30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

SUMMARY

V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

SOT23 package

APPLICATIONS

DC-DC converters

Power management functions

Disconnect switches

Motor control

ORDERING INFORMATION

DEVICE

REEL

TAPE

QUANTITY

 

SIZE

WIDTH

PER REEL

 

 

 

 

ZXMN3B14FTA

7”

8mm

3,000 units

 

 

 

 

ZXMN3B14FTC

13”

8mm

10,000 units

 

 

 

 

DEVICE MARKING

3B4

PACKAGE

PINOUT

ISSUE 2 - JANUARY 2006

1

SEMICONDUCTORS

ZXMN3B14F

ABSOLUTE MAXIMUM RATINGS

PARAMETER

 

 

SYMBOL

LIMIT

UNIT

 

 

 

 

 

 

Drain-Source Voltage

 

 

VDSS

30

V

Gate-Source Voltage

 

 

VGS

12

V

Continuous Drain Current

@ VGS= 4.5V; TA=25°C

(b)

ID

3.5

A

 

@ VGS= 4.5V; TA=70°C

(b)

 

2.9

A

 

@ VGS= 4.5V; TA=25°C

(a)

 

2.9

A

Pulsed Drain Current (c)

 

 

IDM

16

A

Continuous Source Current

(Body Diode) (b)

 

IS

2.4

A

Pulsed Source Current (Body Diode) (c)

 

ISM

16

A

Power Dissipation at TA =25°C (a)

 

PD

1

W

Linear Derating Factor

 

 

 

8

mW/°C

 

 

 

 

 

Power Dissipation at TA =25°C (b)

 

PD

1.5

W

Linear Derating Factor

 

 

 

12

mW/°C

 

 

 

 

 

Operating and Storage Temperature Range

 

Tj, Tstg

-55 to +150

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

 

 

 

 

Junction to Ambient (a)

R JA

125

°C/W

Junction to Ambient (b)

R JA

83

°C/W

NOTES

(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b)For a device surface mounted on FR4 PCB measured at t 5 sec.

(c)Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.

ISSUE 2 - JANUARY 2006

SEMICONDUCTORS

2

ZXMN3B14F

TYPICAL CHARACTERISTICS

ISSUE 2 - JANUARY 2006

3

SEMICONDUCTORS

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