Zetex (Now Diodes) ZXMN3B14F Schematic [ru]

ZXMN3B14F

30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

SUMMARY

V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

•Low on-resistance

•Fast switching speed

•Low threshold

•Low gate drive

•SOT23 package

APPLICATIONS

•DC-DC converters

•Power management functions

•Disconnect switches

•Motor control

ORDERING INFORMATION

DEVICE	REEL	TAPE	QUANTITY
	SIZE	WIDTH	PER REEL
ZXMN3B14FTA	7”	8mm	3,000 units
ZXMN3B14FTC	13”	8mm	10,000 units

DEVICE MARKING

• 3B4

PACKAGE

PINOUT

ISSUE 2 - JANUARY 2006

1	SEMICONDUCTORS

ZXMN3B14F

ABSOLUTE MAXIMUM RATINGS

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltage			VDSS	30	V
Gate-Source Voltage			VGS	12	V
Continuous Drain Current	@ VGS= 4.5V; TA=25°C	(b)	ID	3.5	A
	@ VGS= 4.5V; TA=70°C	(b)		2.9	A
	@ VGS= 4.5V; TA=25°C	(a)		2.9	A
Pulsed Drain Current (c)			IDM	16	A
Continuous Source Current	(Body Diode) (b)		IS	2.4	A
Pulsed Source Current (Body Diode) (c)			ISM	16	A
Power Dissipation at TA =25°C (a)			PD	1	W
Linear Derating Factor				8	mW/°C
Power Dissipation at TA =25°C (b)			PD	1.5	W
Linear Derating Factor				12	mW/°C
Operating and Storage Temperature Range			Tj, Tstg	-55 to +150	°C

THERMAL RESISTANCE

PARAMETER	SYMBOL	VALUE	UNIT
Junction to Ambient (a)	R JA	125	°C/W
Junction to Ambient (b)	R JA	83	°C/W

NOTES

(a)For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(b)For a device surface mounted on FR4 PCB measured at t 5 sec.

(c)Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.

ISSUE 2 - JANUARY 2006

SEMICONDUCTORS

2

ZXMN3B14F

TYPICAL CHARACTERISTICS

ISSUE 2 - JANUARY 2006

3	SEMICONDUCTORS